A capacitor wire includes a core electrode line provided in the form of a wire, an outer electrode line covering at least a portion of the core electrode line, and a dielectric line interposed between the core electrode line and the outer electrode line. The outer electrode line comprises material having a melting point lower than material of the core electrode line.

A device assembly structure includes a first device and at least one second device. The first device has a first active surface and a first backside surface opposite to the first active surface, and includes a plurality of first electrical contacts disposed adjacent to the first active surface. The second device has a second active surface and a second backside surface opposite to the second active surface, and includes a plurality of second electrical contacts disposed adjacent to the second active surface. The second active surface of the second device faces the first active surface of the first device, the second electrical contacts of the second device are electrically connected to the first electrical contacts of the first device, and a thickness of the second device is less than or equal to one fifth of a thickness of the first device.

A device assembly structure includes a first device and at least one second device. The first device has a first active surface and a first backside surface opposite to the first active surface, and includes a plurality of first electrical contacts disposed adjacent to the first active surface. The second device has a second active surface and a second backside surface opposite to the second active surface, and includes a plurality of second electrical contacts disposed adjacent to the second active surface. The second active surface of the second device faces the first active surface of the first device, the second electrical contacts of the second device are electrically connected to the first electrical contacts of the first device, and a thickness of the second device is less than or equal to one fifth of a thickness of the first device.

A semiconductor package structure including a redistribution layer (RDL) structure having a first surface and a second surface opposite thereto is provided. The RDL structure includes an inter-metal dielectric (IMD) layer and a first conductive layer disposed at a first layer-level of the IMD layer. A molding compound covers the first surface of the RDL structure. A first semiconductor die is disposed over the second surface of the RDL structure and electrically coupled to the RDL structure. A plurality of bump structures is disposed over the second surface of the RDL structure and electrically coupled to the RDL structure.

A semiconductor package structure including a redistribution layer (RDL) structure having a first surface and a second surface opposite thereto is provided. The RDL structure includes an inter-metal dielectric (IMD) layer and a first conductive layer disposed at a first layer-level of the IMD layer. A molding compound covers the first surface of the RDL structure. A first semiconductor die is disposed over the second surface of the RDL structure and electrically coupled to the RDL structure. A plurality of bump structures is disposed over the second surface of the RDL structure and electrically coupled to the RDL structure.

Disclosed is a semiconductor package and a method for manufacturing the same, wherein manufacturing costs and manufacturing processes may be further reduced. The semiconductor package includes, a first die, a second die arranged horizontally to the first die, a printed circuit board (PCB) layer including circuit and a PCB pillar extending upwards from the circuit so as to abut the first die or the second die, and a connecting structure disposed on an upper surface of the PCB layer between two different PCB pillars and conductively connected to each of the first die and the second die.

A capacitor wire includes a core electrode line provided in the form of a wire, an outer electrode line covering at least a portion of the core electrode line, and a dielectric line interposed between the core electrode line and the outer electrode line. The outer electrode line comprises material having a melting point lower than material of the core electrode line.

According to one embodiment, a semiconductor device includes: a first conductive layer provided on a substrate; a second conductive layer provided on the substrate and to which a first voltage is supplied; a third conductive layer corresponding to an output node and provided on the substrate between the first conductive layer and the second conductive layer; a first switching device provided above the first conductive layer and including a first terminal to which a second voltage higher than the first voltage is supplied and a second terminal connected to the third conductive layer; and a second switching device provided above the second conductive layer and including a third terminal connected to the third conductive layer and a fourth terminal connected to the second conductive layer.