A lens module and a manufacturing method of the lens module are provided. The manufacturing method includes the following steps. Firstly, a circuit substrate is provided. Then, an image sensor chip is placed on a top surface of the circuit substrate. Then, plural electrical connection paths are formed between the image sensor chip and the circuit substrate. Then, plural stacking spacer structures are formed on a top surface of the image sensor chip by a stacking process. Then, plural protective sidewalls are formed to cover the electrical connection paths. Then, a glass substrate is placed over the stacking spacer structures. Then, a lens holder structure is placed on a substrate top surface of the glass substrate directly. The glass substrate is supported by the stacking spacer structures. Consequently, the glass substrate can be maintained at the position over the image sensor chip.

A sensor device according to the present disclosure includes: a Peltier element; a sensor element thermally connected to a cooling surface of the Peltier element; and a package substrate that is made of ceramic, is thermally connected to a heat dissipation surface of the Peltier element, and accommodates the Peltier element and the sensor element.

An image sensor device is disclosed, which blocks noise of a pad region. The image sensor device includes a substrate including a first surface and a second surface that are arranged to face each other, a pad disposed over the first surface of the substrate, and a through silicon via (TSV) formed to penetrate the substrate, and disposed at both sides of the pad in a first direction.

There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

A semiconductor package may include an image sensor chip, a transparent substrate spaced apart from the image sensor chip, a joining structure in contact with a top surface of the image sensor chip and a bottom surface of the transparent substrate, on an edge region of the top surface of the image sensor chip, and a circuit substrate electrically connected to the image sensor chip. The image sensor chip may include a penetration electrode which penetrates at least a portion of an internal portion of the image sensor chip, and a terminal pad, which is on the edge region of the top surface of the image sensor chip and is connected to the penetration electrode. The joining structure may include a spacer and an adhesive layer which is between and attached to the spacer and the image sensor chip. The joining structure may the terminal pad.

Disclosed herein is a method comprising: forming a first electrically conductive layer on a first surface of a substrate of semiconductor, wherein the first electrically conductive layer is in electrical contact with the semiconductor; bonding, at the first electrically conductive layer, a support wafer to the substrate of semiconductor; thinning the substrate of semiconductor.

A hybrid sensor shift platform for an optical image stabilization (OIS) actuator mechanism in compact camera modules includes two or more substrates. A top substrate is composed of an organic material (e.g., a resin) to reduce mass, reduce magnetic interaction with permanent magnets, and improve reliability. One or more lower substrates of the hybrid sensor shift platform are ceramic substrates that provide the benefits of ceramics for connection to the image sensor. The organic substrate is connected via a solder bond process to the lower ceramic substrate(s). The connection between the substrates is reinforced with an under-fill of epoxy that surrounds the solder bonds, thus creating a full interface between the substrates within the overlap.

A component carrier includes a stack with at least one electrically conductive layer structure and at least one electrically insulating layer structure. The stack has at least one central stack section, at least one cavity stack section, and at least one vertical opening formed in the cavity stack section. The cavity stack section at least partially surrounds the central stack section, and the thickness of the central stack section is greater than the thickness of the cavity stack section.

A solid-state image capturing device according to the present disclosure includes an image capturing element, a light transmitting member, a support member, a sealing resin member, and a wall member. The image capturing element is mounted on a substrate. The support member is arranged in a part of an outer-peripheral portion of the image capturing element, the outer-peripheral portion surrounding a light receiving unit of the image capturing element. The light transmitting member is supported by the support member. The sealing resin member is arranged in a peripheral portion of the image capturing element. The wall member is provided between the sealing resin member and a part of the outer-peripheral portion of the image capturing element, the part excluding a part in which the support member is arranged.

An imaging apparatus with reduced flare includes an imaging structure including a solid state imaging element (1) and a transparent substrate (2) disposed on the imaging element. The imaging apparatus includes a circuit substrate (7) including a circuit, a spacer (10) including at least one fixing portion (11) that guides the imaging structure to a desired position on the circuit substrate (7) when the imaging structure is mounted on the circuit substrate, and a light absorbing material (13) disposed on at least one side surface of the imaging structure such that that light absorbing material (13) is between the imaging structure and the at least one fixing portion.