In an embodiment a method for manufacturing an image sensor includes forming of a plurality of microlenses at a first resin layer, forming a mask on top of and in contact with the first resin layer, the mask comprising a second resin; and chemical plasma etching the first resin layer through the mask.

Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.

A process of overlay offset measurement includes providing a substrate; forming a first pattern layer with a predetermined first pattern on the substrate; forming a first photoresist layer on the substrate and the first pattern layer; forming a second photoresist layer on the first photoresist layer; forming a second pattern layer with a predetermined second pattern on the second photoresist layer; patterning the second photoresist layer to form a trench having a predetermined third pattern being substantially aligned with the predetermined first pattern of the first pattern layer; and performing overlay offset measurement according to the second pattern layer and the trench.

There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

A semiconductor package may include an image sensor chip, a transparent substrate spaced apart from the image sensor chip, a joining structure in contact with a top surface of the image sensor chip and a bottom surface of the transparent substrate, on an edge region of the top surface of the image sensor chip, and a circuit substrate electrically connected to the image sensor chip. The image sensor chip may include a penetration electrode which penetrates at least a portion of an internal portion of the image sensor chip, and a terminal pad, which is on the edge region of the top surface of the image sensor chip and is connected to the penetration electrode. The joining structure may include a spacer and an adhesive layer which is between and attached to the spacer and the image sensor chip. The joining structure may the terminal pad.

An image sensor and a method of manufacturing thereof are provided. The image sensor includes a substrate, a grid structure, and color filters. The substrate includes a pixel separation structure defining pixel regions, and a sub-pixel regions for each pixel region. The grid structure is disposed on the substrate and includes first fence segments provided between the sub-pixel regions, and second fence segments provided between neighboring pixel regions. The grid structure defines openings corresponding respectively to the sub-pixel regions. The color filters are disposed in the openings defined by the grid structure. Each of the color filters has a flat top surface and the flat top surface of each color filter is parallel to a bottom surface thereof.

A semiconductor optical sensor (1) is provided with: a substrate (2) integrating a plurality of photodetector active areas (4); and a CMOS layer stack (6) arranged on the substrate (2) and including a number of dielectric (6a) and conductive (6b) layers. UV conversion regions (10) are arranged above a number of first photodetector active areas (4) to convert UV light radiation into visible light radiation towards the first photodetector active areas (4), so that the first photodetector active areas (4) are designed to detect UV light radiation. In particular, the first photodetector active areas (4) are alternated to a number of second photodetector active areas (4), designed to detect visible light radiation, in an array (15) of photodetection units (16) of the optical sensor (1), defining a single image detection area (15′), sensitive to both UV and visible light radiation with a same spatial resolution.

Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.