A solid-state imaging device according to the present disclosure includes a light-receiving substrate, a circuit board, and a plurality of first connections. The light-receiving substrate includes a plurality of light-receiving circuits provided with photoelectric conversion elements. The circuit board is directly bonded to the light-receiving substrate and includes a plurality of address event detection circuits that detects individual changes in voltages output from the photoelectric conversion elements of the plurality of light-receiving circuits. The plurality of first connections is provided at a joint between the light-receiving substrate and the circuit board to electrically connect the light-receiving circuits and the address event detection circuits corresponding to each other.

In an embodiment a pixel arrangement includes a photodetector configured to accumulate charge carriers by converting electromagnetic radiation, a transfer transistor electrically coupled to the photodetector, a diffusion node electrically coupled to the transfer transistor, a reset transistor electrically coupled to the diffusion node and to a pixel supply voltage and a sample-and-hold stage including at least a first capacitor and a second capacitor, an input of the sample-and-hold stage being electrically coupled to the diffusion node via an amplifier, wherein the transfer transistor is configured to be pulsed to different voltage levels for transferring parts of the accumulated charge carriers to the diffusion node, wherein at least the second capacitor is configured to store a low conversion gain signal representing a first part of the accumulated charge carriers, and wherein the first capacitor is configured to store a high conversion gain signal representing a remaining part of the accumulated charge carriers.

A sensor chip includes a sensor pixel. The sensor pixel includes an avalanche photodetector. A circuit is adjacent to the avalanche photodetector. The circuit is coupled to the avalanche photodetector. An isolation structure at least partially encloses the circuit and is between the avalanche photodetector and the circuit.

A detection device includes a plurality of detection elements that are arranged in a matrix having a row-column configuration in a detection area, and each comprise a photoelectric conversion element to which a reverse bias voltage is configured to be applied when detection is performed, and an initialization circuit configured to apply an initialization voltage higher than the reverse bias voltage to the photoelectric conversion element before the reverse bias voltage is applied to the photoelectric conversion element.

A detection device includes a plurality of detection elements arranged in a matrix having a row-column configuration in a detection area, a plurality of scan lines each coupled to the detection elements arranged in a first direction, a drive circuit configured to drive the scan lines, a plurality of output signal lines each coupled to the detection elements arranged in a second direction different from the first direction, and a detection circuit configured to be supplied with detection signals from the detection elements through the output signal lines.

The present specification provides a detector for an X-ray imaging system. The detector includes at least one high resolution layer having high resolution wavelength-shifting optical fibers, each fiber occupying a distinct region of the detector, at least one low resolution layer with low resolution regions, and a single segmented multi-channel photo-multiplier tube for coupling signals obtained from the high resolution fibers and the low resolution regions.

According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

To improve image quality of image data in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photodiode, a pixel signal generation unit, and a detection unit. In the solid-state image sensor, the photodiode generates electrons and holes by photoelectric conversion. The pixel signal generation unit generates a pixel signal having a voltage according to an amount of one of the electrons and the holes. The detection unit detects whether or not a change amount in the other of the electrons and the holes has exceeded a predetermined threshold and outputs a detection signal.

A semiconductor optical sensor (1) is provided with: a substrate (2) integrating a plurality of photodetector active areas (4); and a CMOS layer stack (6) arranged on the substrate (2) and including a number of dielectric (6a) and conductive (6b) layers. UV conversion regions (10) are arranged above a number of first photodetector active areas (4) to convert UV light radiation into visible light radiation towards the first photodetector active areas (4), so that the first photodetector active areas (4) are designed to detect UV light radiation. In particular, the first photodetector active areas (4) are alternated to a number of second photodetector active areas (4), designed to detect visible light radiation, in an array (15) of photodetection units (16) of the optical sensor (1), defining a single image detection area (15′), sensitive to both UV and visible light radiation with a same spatial resolution.