A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including forming a germanium-silicon layer for the second group of photodiodes on a first semiconductor donor wafer; defining a first interconnect layer on the germanium-silicon layer; defining integrated circuitry for controlling pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer; bonding the first interconnect layer with the second interconnect layer; defining the pixels of an image sensor array on a second semiconductor donor wafer; defining a third interconnect layer on the image sensor array; and bonding the third interconnect layer with the germanium-silicon layer.

The quantum efficiency can be improved. A solid-state imaging device according to an embodiment includes: a plurality of pixels (110) arranged in a matrix, in which each of the pixels includes a first semiconductor layer (35), a photoelectric conversion section (PD1) disposed on the first semiconductor layer on a side of a first surface, an accumulation electrode (37) disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface, a wiring (61, 62, 63, 64) extending from the second surface of the first semiconductor layer, a floating diffusion region (FD1) connected to the first semiconductor layer via the wiring, and a first gate (11) that forms a potential barrier in a charge flow path from the first semiconductor layer to the floating diffusion region via the wiring.

There is provided a light detecting device. The light detecting device includes an element substrate including an element region and a peripheral region and a circuit substrate that faces the element substrate and is electrically connected to the semiconductor layer through the first wiring layer. The element region includes a first wiring layer and a semiconductor layer. The semiconductor layer includes a compound semiconductor material, and the peripheral region is outside the element region in a plan view. An outer boundary of the element substrate is different from an outer boundary of the circuit substrate.

An infrared detector includes: a first light receiving layer having a first cutoff wavelength; a second light receiving layer having a second cutoff wavelength longer than the first cutoff wavelength; an intermediate filter layer having a third cutoff wavelength that is the same as or longer than the first cutoff wavelength and the same as or shorter than the second cutoff wavelength, the intermediate filter layer being disposed between the first light receiving layer and the second light receiving layer; a first barrier layer disposed between the first light receiving layer and the intermediate filter layer; and a second barrier layer disposed between the second light receiving layer and the intermediate filter layer.

A semiconductor arrangement is provided. The semiconductor arrangement includes a first component in a substrate. The semiconductor arrangement includes a gap fill layer. A first portion of the gap fill layer overlies the first component. The first portion of the gap fill layer has a tapered sidewall. A first portion of the substrate separates the first portion of the gap fill layer from the first component.

Image sensor, mobile terminal, image capturing method are provided. Pixel array of image sensor includes preset quantity of pixel units, pixel unit includes first and second pixels that are dual pixel focusing pixels, first pixel includes red, green, and blue subpixels, second pixel includes green subpixel and infrared subpixel, and at least one of red and blue subpixels, and each subpixel is arranged in four-in-one manner; position of infrared subpixel in second pixel is same as position of red subpixel, green subpixel, blue subpixel, first combination of subpixels, or second combination of subpixels in first pixel; or position of half the infrared subpixel in second pixel is same as position of half the red subpixel, half the green subpixel, or half the blue subpixel in first pixel, and half an infrared subpixel in each of two adjacent second pixels is combined to form entire infrared subpixel.

An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.

An electrical device includes a substrate with a compressive layer, a neutral stress buffer layer and a tensile stress compensation layer. The stress buffer layer and the stress compensation layer may each be formed with aluminum nitride using different processing parameters to provide a different intrinsic stress value for each layer. The aluminum nitride tensile layer is configured to counteract stresses from the compressive layer in the device to thereby control an amount of substrate bow in the device. This is useful for protecting fragile materials in the device, such as mercury cadmium telluride. The aluminum nitride stress compensation layer also can compensate for forces, such as due to CTE mismatches, to protect the fragile layer. The device may include temperature-sensitive materials, and the aluminum nitride stress compensation layer or stress buffer layer may be formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

CMOS image sensor with LED flickering reduction and low color cross-talk are disclosed. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Each pixel includes a plurality of large subpixels (LPDs) and at least one small subpixel (SPD). A plurality of color filters are disposed over individual subpixels. Each individual SPD is laterally adjacent to at least one other SPD.

A direct bonding method for infrared focal plane arrays, includes steps of depositing a thin adhesion layer on infrared radiation detecting material, removing a portion of the thin adhesion layer with a chemical-mechanical polishing process, forming a bonding layer at a bonding interface, and bonding the infrared radiation detecting material to a silicon wafer with the thin adhesion layer as a bonding layer. The thin adhesion layer may include SiO.sub.x, where x ranges between 1.0 and 2.0. The thickness of the thin adhesion layer to form the bonding layer is 500 angstrom or less.