Disclosed herein is a method comprising: forming a first electrically conductive layer on a first surface of a substrate of semiconductor, wherein the first electrically conductive layer is in electrical contact with the semiconductor; bonding, at the first electrically conductive layer, a support wafer to the substrate of semiconductor; thinning the substrate of semiconductor.

A III-V semiconductor pixel X-ray detector, including an absorption region of a first or a second conductivity type, at least nine semiconductor contact regions of the second conductivity type arranged in a matrix along the upper side of the absorption region, and optionally a semiconductor contact layer of the first conductivity type, a metallic front side connecting contact being arranged beneath the absorption region, and a metallic rear side connecting contact being arranged above each semiconductor contact region, and a semiconductor passivation layer of the first or the second conductivity type. The semiconductor passivation layer and the absorption region being lattice-matched to each other. The semiconductor passivation layer being arranged in regions on the upper side of the absorption region. The semiconductor passivation layer having a minimum distance of at least 2 μm or at least 20 μm with respect to each highly doped semiconductor contact region.

A radiation imaging apparatus comprising a first scintillator, a second scintillator which receives radiation transmitted through the first scintillator, conversion elements and a controller is provided. The conversion elements include first conversion elements and second conversion elements with different sensitivities for detecting light emitted from at least one of the first scintillator or the second scintillator. During radiation irradiation, the controller obtains, from a signal output from one or more measuring element configured to measure a dose of incident radiation, a first signal corresponding to light converted from radiation by the second scintillator, and outputs, based on the first signal, a stop signal configured to stop the radiation irradiation, and after the radiation irradiation, the controller causes the first conversion elements and the second conversion elements to output signals configured to generate an energy subtraction image.

Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

Example embodiments generally relate to a detector for electromagnetic radiation such as a detector comprising a first, pixelated electrode layer comprising a plurality of electrode pixels, a first layer comprising a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation, and a second electrode layer, as well as a method of producing a detector for electromagnetic radiation, comprising providing a first, pixelated electrode layer comprising a plurality of electrode pixels, applying a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation on the first, pixelated electrode layer, and applying a second electrode layer on the first layer.

An image detector includes a substrate, a circuit layer, a plurality of light detecting elements, a plurality of driving elements and a crystal scintillation layer. The substrate has a surface. The circuit layer is arranged on the surface of the substrate, and defines a plurality of detecting areas arranged in an array. The light detecting elements and the driving elements are disposed at the detecting areas and electrically connected with the circuit layer. Each driving element drives one or more of the light detecting elements. The crystal scintillation layer is arranged opposite to the substrate and covers the detecting areas. The light detecting elements and the driving elements connect with the surface of the substrate. At least one of the light detecting elements and the driving elements is formed by a process different from the process of forming the circuit layer on the substrate.

The present disclosure provides a detection substrate, a manufacturing method thereof and a ray detector. The detection substrate includes: a base substrate; a plurality of independent first electrodes arranged on the base substrate on the same layer; a photoelectric conversion layer arranged on a whole face of sides, facing away from the base substrate, of the plurality of first electrodes; a ray absorption layer arranged on a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer, wherein an orthographic projection of the ray absorption layer on the base substrate is overlapped with an orthographic projection of gaps between the first electrodes on the base substrate; and a second electrode arranged on a whole face of a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer.

The present disclosure provides a photosensitive device, including: a photosensitive layer (1) formed by stacking a plurality of fillers, each of the fillers being a uniformly distributed nanopore structure, the nanopore structure being filled with gaseous selenium; a first electrode (2) provided on a light incident side of the photosensitive layer (1); and a second electrode (3) provided on a light exit side of the photosensitive layer (1). The present disclosure further provides an X-ray detector and a display device.

Provided are a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a first electrode and a sensing layer. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode and has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface. The manufacturing method of the sensing device includes the following. A substrate is provided. A sensing layer is formed on the substrate. A first electrode is formed on the substrate so that the first electrode is disposed between the sensing layer and the substrate. The sensing layer has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface of the sensing layer.

Low-power, dual sensitivity thin oxide FG-MOSFET sensors in RF-CMOS technology for a wireless X-ray dosimeter chip, methods for radiation measurement and for charging and discharging the sensors are described. The FG-MOSFET sensor from a 0.13 μm (RF-CMOS process, includes a thin oxide layer having a device region, a source and a drain associated with the device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension extending over the thin oxide layer adjacent to the device well region. In a matched sensor pair for dual sensitivity radiation measurement, the floating gate and the floating gate extension of a FG-MOSFET higher sensitivity sensor are without a salicide layer or a silicide layer formed thereon and the floating gate and the floating gate extension of a FG-MOSFET lower sensitivity sensor have a salicide layer or a silicide layer formed thereon.