Disclosed herein is a method comprising: forming a first electrically conductive layer on a first surface of a substrate of semiconductor, wherein the first electrically conductive layer is in electrical contact with the semiconductor; bonding, at the first electrically conductive layer, a support wafer to the substrate of semiconductor; thinning the substrate of semiconductor.

A radiation scanning system comprises a radiation detection sub-assembly, and a routing sub-assembly coupled to the radiation detection sub-assembly. The radiation detection sub-assembly comprises a first substrate electrically connected to the radiation detection sub-assembly, and a second substrate electrically connected to the first substrate. The radiation scanning system further comprises one or more radiation shields between the first substrate and the second substrate, and one or more semiconductor dice electrically connected to the second substrate on a side of the second substrate opposite the first substrate. Related radiation detector arrays radiation scanning systems are also disclosed.

The present invention relates to a photon counting detector comprising a plurality of detector tiles. Each detector tile comprises a sensor material layer (20), an integrated circuit (30), an input/output connection or flex (50), a high voltage electrode or foil (60), and an anti scatter grid (10). The input/output connection or flex is connected to the integrated circuit. The integrated circuit is configured to readout signals from the sensor material layer. The anti scatter grid is positioned adjacent to a surface of the sensor material layer. The high voltage electrode or foil extends across the surface of the sensor material layer and is configured to provide a bias voltage to the surface of the sensor material layer. The high voltage electrode or foil comprises at least one tail section (70). Relating to the photon counting detector and the plurality of detector tiles, the high voltage electrode or foil of a first detector tile is configured to make an electrical connection with the high voltage electrode or foil of an adjacent detector tile via one or more tail sections of the at least one tail section of the first detector tile and/or via one or more tail sections of the at least one tail section of the adjacent detector tile.

The embodiments of the present disclosure provide a detection substrate and a ray detector, comprising a base substrate; a direct-conversion photosensitive device located on the base substrate; an indirect-conversion photosensitive device located between the base substrate and the layer where the direct-conversion photosensitive device is located; and a reading transistor located between the base substrate and the layer where the indirect-conversion photosensitive device is located. The reading transistor is electrically connected to the direct-conversion photosensitive device and the indirect-conversion photosensitive device respectively.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first logic die including a first through via, an image sensor die hybrid bonded to the first logic die, and a second logic die bonded to the first logic die. A front side of the first logic die facing a front side of the image sensor die. A front side of the second logic die facing a backside of the first logic die. The second logic die comprising a first conductive pad electrically coupled to the first through via.

A radiation detector including: a substrate formed with a plural pixels in pixel region of a flexible base member, the plural pixels accumulates charges generated in response to light converted from radiation; a conversion layer provided at a surface to which the pixel region is provided on the base member, the conversion layer converts the radiation into light; and a reinforcement substrate provided at a surface of the conversion layer that faces a surface of the substrate side, the reinforcement substrate contains a material having a yield point and has a higher rigidity than the base member.

An electronic module is disclosed. The electronic module can include a package substrate, an integrated device die, a dam structure, and a mounting compound. The integrated device die can have an upper side, a lower side, and an outer side edge. The dam structure can have a first sidewall and a second sidewall opposite the first sidewall. The second sidewall can be nearer to the outer side edge than the first sidewall. The first sidewall can be laterally positioned between a center of the lower side of the integrated device die and the outer side edge. The dam structure can be disposed between a portion of the package substrate and a portion of the lower side of the integrated device die. The mounting compound can be disposed between the lower side of the integrated device die and the package substrate. The dam structure can be positioned between the mounting compound and the outer side edge of the integrated device die.

Disclosed herein is a method, comprising: forming a radiation absorption layer comprising a layer of SiC on a semiconductor substrate; forming a first electric contacts on a first surface of the radiation absorption layer; bonding the radiation absorption layer with an electronics layer; removing the semiconductor substrate; forming a second electric contacts on a second surface of the radiation absorption layer distal from the electronics layer.

An X-ray imaging device with an X-ray conversion area on a flexible circuit such as a Thin Film Transistor circuit with an array of detector cells is manufactured in a method comprising the steps of — providing a flexible carrier layer on a substrate plate, with a first surface of the flexible carrier layer attached to the substrate plate and a second surface of the flexible carrier layer exposed, whereby the substrate plate hinders the flexible carrier layer from bending; — creating an array of detector cells on a part of the second surface; — mounting a peripheral circuit on the second surface outside said part, interconnected to the array of detector cells; — attaching a further layer to the second surface, after or before mounting the peripheral circuit, the further layer comprising an X-ray conversion area at least over the array of detector cells, the further layer being attached to the flexible carrier layer beyond a first edge of the array of detector cells, and beyond the peripheral circuit, the further layer comprising a recess or and opening to accommodate the peripheral circuit; — detaching the substrate plate from the flexible carrier layer before the end of manufacturing the X-ray imaging device.

Monolithic pixel detectors, systems and methods for the detection and imaging of radiation in the form of energetic particles which may have a mass or be massless (such as X-ray photons) comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. The pixel detectors, systems and methods are used in various medical, industrial and scientific types of applications.