A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.

A pixel array includes a plurality of pixels. Each pixel includes a photoelectric conversion region that converts incident light into electric charge, and a charge transfer section coupled to the photoelectric conversion region and having line symmetry along a first axis in a plan view. The charge transfer section includes a first transfer transistor coupled to a first floating diffusion and the photoelectric conversion region and located at a first side of the photoelectric conversion region, and a second transfer transistor coupled to a second floating diffusion and the photoelectric conversion region and located at the first side of the photoelectric conversion region.

A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.

An image sensor pixel may include a photodiode, one or more storage diodes, one or more potential barrier structures, one or more capacitors, and a floating diffusion region. The photodiode may be coupled to a storage diode and a first capacitor, and a first potential barrier structure may be interposed between the storage diode and the first capacitor. The photodiode may also be coupled to additional storage diodes and additional capacitors in a similar manner. Additionally, the photodiode may be directly separated from a given capacitor via a corresponding potential barrier structure. Each capacitor may store overflow charge from one or more storage diodes and/or the photodiode and may be connected to the floating diffusion via respective transistors.

An image sensor pixel may include a photodiode, one or more storage diodes, one or more potential barrier structures, one or more capacitors, and a floating diffusion region. The photodiode may be coupled to a storage diode and a first capacitor, and a first potential barrier structure may be interposed between the storage diode and the first capacitor. The photodiode may also be coupled to additional storage diodes and additional capacitors in a similar manner. Additionally, the photodiode may be directly separated from a given capacitor via a corresponding potential barrier structure. Each capacitor may store overflow charge from one or more storage diodes and/or the photodiode and may be connected to the floating diffusion via respective transistors.

A pixel array includes a plurality of pixels. Each pixel includes a photoelectric conversion region that converts incident light into electric charge, and a charge transfer section coupled to the photoelectric conversion region and having line symmetry along a first axis in a plan view. The charge transfer section includes a first transfer transistor coupled to a first floating diffusion and the photoelectric conversion region and located at a first side of the photoelectric conversion region, and a second transfer transistor coupled to a second floating diffusion and the photoelectric conversion region and located at the first side of the photoelectric conversion region.

A plurality of pixels which are two-dimensionally arranged on a semiconductor substrate includes: a photodiode generating charge by photoelectric conversion; two readout gates each reading charge from the photodiode; and two memories each receiving the charge from the photodiode through an associated one of the two readout gates and temporarily retaining the charge received. Two of the pixels adjacent to each other in a row direction share one of the two readout gates.