A computational pixel imaging device that includes an array of pixel integrated circuits for event-based detection and imaging. Each pixel may include a digital counter that accumulates a digital number, which indicates whether a change is detected by the pixel. The counter may count in one direction for a portion of an exposure and count in an opposite direction for another portion of the exposure. The imaging device may be configured to collect and transmit key frames at a lower rate, and collect and transmit delta or event frames at a higher rate. The key frames may include a full image of a scene, captured by the pixel array. The delta frames may include sparse data, captured by pixels that have detected meaningful changes in received light intensity. High speed, low transmission bandwidth motion image video can be reconstructed using the key frames and the delta frames.

Provided is a display device or a display system capable of displaying images along a curved surface, a display device or a display system capable of displaying images seamlessly in the form of a ring, or a display device or a display system that is suitable for increasing in size. The display device includes a display panel. The display panel includes a first part and a second part and is flexible. The first part can display images. The second part can transmit visible light. The display panel is curved so that the second part and the first part overlap with each other.

A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

A photo detector having a substrate and a first structure formed on the substrate. The first structure includes an emitter layer formed on the substrate and a base layer formed on the emitter layer. Further, the first structure includes a collector layer formed on the base layer. The collector layer has a plasmonic structure. The plasmonic structure includes a first plurality of mesa structures. Each of the mesa structures of the first plurality of mesa structures includes a second plurality of mesa structures having ridges arranged in a regularly repeating pattern.

Photosensitive semiconducting devices, such as bipolar junction transistors (BJTs) can be built up over a substrate that may include a read-out integrated circuit (ROIC). Semiconducting layers can be deposited over the substrate and bottom electrodes that are on or at the substrate's top surface. The bottom electrodes may be the input pads of the ROIC. A top electrode is deposited over the semiconducting layers. The semiconducting layers can form BJTs between the bottom electrodes and the top electrode. The top electrode and the bottom electrodes are the BJTs collectors and emitters. The semiconducting layers include a P-type quantum dot layer and a N-type metal oxide layer. The quantum dots act as light sensors for the ROIC because photons absorbed in a semiconducting layer can produce a BJT base current. The BJTs can be formed without requiring a vacuum or patterning of the top electrode.

A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.

A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

A stereo imaging system includes an optical assembly and a computational pixel imager (CPI) having a plurality of pixels. Each pixel includes a light sensor and counters that convert a photocurrent from the light sensor to a digital signal. The optical assembly, which directs light from a light field to the CPI, includes an optical field combiner and first and second primary lens assemblies, which are configured to receive first and second portions of the light from the light field, respectively, and to direct the first and second portions of the light to the optical field combiner. The optical field combiner includes a modulator configured to modulate the first and second portions of the light and to direct modulated first and second portions of the light onto the CPI. The counters are configured to perform digital signal processing on the digital signal.

Provided is a display device or a display system capable of displaying images along a curved surface, a display device or a display system capable of displaying images seamlessly in the form of a ring, or a display device or a display system that is suitable for increasing in size. The display device includes a display panel. The display panel includes a first part and a second part and is flexible. The first part can display images. The second part can transmit visible light. The display panel is curved so that the second part and the first part overlap with each other.

An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction includes a first semiconductor doped with one or more n-type primary dopant species and a second semiconductor doped with one or more p-type primary dopant species. The device also includes a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor. The first counterdoped component is counterdoped with one or more counterdopant species that have a polarity opposite to the polarity of the primary dopant included in the first counterdoped component. Additionally, a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant is selected to the counterdoped heterojunction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.