A device for determining the surface topology and associated color of a structure, such as a teeth segment, includes a scanner for providing depth data for points along a two-dimensional array substantially orthogonal to the depth direction, and an image acquisition means for providing color data for each of the points of the array, while the spatial disposition of the device with respect to the structure is maintained substantially unchanged. A processor combines the color data and depth data for each point in the array, thereby providing a three-dimensional color virtual model of the surface of the structure. A corresponding method for determining the surface topology and associate color of a structure is also provided.

An image sensor includes a semiconductor substrate, a first photoelectric converter, and a second photoelectric converter. The semiconductor substrate has an electric-charge storage region. The second photoelectric converter is located between the first photoelectric converter and the semiconductor substrate. The first photoelectric converter includes a first counter electrode, a first pixel electrode, and a first photoelectric conversion layer. The first photoelectric conversion layer is located between the first counter electrode and the first pixel electrode. The second photoelectric converter includes a second counter electrode, a second pixel electrode, and a second photoelectric conversion layer. The second photoelectric conversion layer is located between the second counter electrode and the second pixel electrode. The electric-charge storage region is electrically connected to the first pixel electrode and the second pixel electrode.

A pixel array includes pixel cells disposed in semiconductor material. Each of the pixel cells includes photodiodes, and a floating diffusion to receive image charge from the photodiodes. A source follower is coupled to the floating diffusion to generate an image signal in response image charge from the photodiodes. Drain regions of first and second row select transistors are coupled to a source of the source follower. A common junction is disposed in the semiconductor material between gates of the first and second row select transistors such that the drains of the first and second row select transistors are shared and coupled together through the semiconductor material of the common junction. The pixel cells are organized into a rows and columns with bitlines.

An image processing apparatus includes a correction factor calculating unit configured to calculate a correction factor for correcting a difference in pixel values corresponding to a difference between a spectral sensitivity and a preset reference spectral sensitivity in a predetermined wavelength range at a pixel of interest, based on image data generated by an image sensor, the image sensor having a plurality of pixels on which color filters of a plurality of colors with different spectral transmittances are respectively disposed, the color filters forming a predetermined array pattern, the correction factor calculating unit being configured to calculate the correction factor for each of the plurality of pixels on which at least a predetermined color filter of the color filters is disposed.

According to an embodiment, a distance measuring apparatus includes a multi laser beam emitting unit, an irradiating position changing unit, an image acquiring unit, and a distance calculating unit. The multi laser beam emitting unit irradiates a surface of a measurement target object with a plurality of elliptical laser beams provided in line in a minor axis direction. The irradiating position changing unit reciprocally moves irradiating positions of the laser beams all together along a major axis of the laser beams. The image acquiring unit receives reflected lights of the laser beams, and acquires an image of a bright and dark pattern of the reflected lights of the laser beams formed on an image acquiring face. The distance calculating unit calculates a distance to the measurement target object based on the bright and dark pattern of the reflected lights on the image acquiring face.

Provided are a color separation element and an image sensor including the same. The color separation element includes a spacer layer; and a color separation lens array, which includes at least one nano-post arranged in the spacer layer and is configured to form a phase distribution for splitting and focusing incident light according to wavelengths, wherein periodic regions in which color separation lens arrays are repeatedly arranged are provided, and the color separation lens array is configured to interrupt phase distribution at the boundary of the periodic regions.

An imaging device includes a plurality of arranged imaging elements each including: a light-receiving element configured to generate charge from received light by photoelectric conversion, a floating diffusion configured to convert the charge generated by the light-receiving element into voltage, a charge transfer switch configured to transfer the charge from the light-receiving element to the floating diffusion, a reset switch configured to reset the voltage of the floating diffusion, and a source follower configured to amplify the voltage of the floating diffusion. The reset switch is configured to reset the voltage of the floating diffusion a plurality of times for each of predetermined pixel groups in a single image data acquisition period. The charge transfer switch is configured to transfer the charge from the light-receiving element to the floating diffusion a plurality of times for each of the pixel groups in the single image data acquisition period.

A pixel array includes pixel cells, each including photodiodes. A source follower is coupled to generate an image signal in response image charge generated by the photodiodes. A first row select transistor is coupled to the source follower to output the image signal of the pixel cell. Pixel cells are organized into columns including a first column and a second column. The first row select transistors of the pixel cells of the first and second columns of pixel cells are coupled to first and second column bitlines, respectively. The pixel cells of the second column of pixel cells further include a second row select transistor coupled to the source follower to output the respective image signal to the first column bitline.

Provided are a color separation element and an image sensor including the same. The color separation element includes a spacer layer; and a color separation lens array, which includes at least one nano-post arranged in the spacer layer and is configured to form a phase distribution for splitting and focusing incident light according to wavelengths, wherein periodic regions in which color separation lens arrays are repeatedly arranged are provided, and the color separation lens array is configured to interrupt phase distribution at the boundary of the periodic regions.

A pixel array includes pixel cells, each including photodiodes. A source follower is coupled to generate an image signal in response image charge generated by the photodiodes. A first row select transistor is coupled to the source follower to output the image signal of the pixel cell. Pixel cells are organized into columns including a first column and a second column. The first row select transistors of the pixel cells of the first and second columns of pixel cells are coupled to first and second column bitlines, respectively. The pixel cells of the second column of pixel cells further include a second row select transistor coupled to the source follower to output the respective image signal to the first column bitline.