Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

A composition includes two or more near infrared absorbing compounds having an absorption maximum in a wavelength range of 650 to 1000 nm and having a solubility of 0.1 mass % or lower in water at 23° C., in which the two or more near infrared absorbing compounds include a first near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm, and a second near infrared absorbing compound having an absorption maximum in a wavelength range of 650 to 1000 nm which is shorter than the absorption maximum of the first near infrared absorbing compound, and a difference between the absorption maximum of the first near infrared absorbing compound and the absorption maximum of the second near infrared absorbing compound is 1 to 150 nm.

A solid-state imaging device includes an N-type semiconductor layer, an element layer including a photoelectric conversion element and an active element, an interconnect layer providing an interconnect for the active element, and an element isolation trench penetrating the semiconductor layer. The element layer includes a P-type region and an N-type region. A first hole storage layer is formed on a surface of the semiconductor layer on a side opposite to the element layer. A second hole storage layer is formed in contact portions of the semiconductor layer and the element layer with the element isolation trench. The P-type region of the element layer and the first hole storage layer are connected to each other by the second hole storage layer.

Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.

A layer stack is formed over a conductive material portion located on a substrate. The layer stack contains a first silicon oxide layer, a silicon nitride layer formed by chemical vapor deposition, and a second silicon oxide layer. A patterned etch mask layer including an opening is formed over the layer stack. A via cavity extending through the layer stack and down to the conductive material portion is formed by isotropically etching portions of the layer stack underlying the opening in the patterned etch mask layer using an isotropic etch process. A buffered oxide etch process may be used, in which the etch rate of the silicon nitride layer is less than, but is significant enough, compared to the etch rate of the first silicon oxide layer to provide tapered straight sidewalls on the silicon nitride layer. An optical device including a patterned layer stack can be provided.

A detector including a detector membrane comprising a semiconductor sensor and a readout circuit, the detector membrane having a thickness of 100 micrometers or less and a curved surface conformed to a curved focal plane of an optical system imaging electromagnetic radiation onto the curved surface; and a mount or substrate attached to a backside of the detector membrane. A maximum of the strain experienced by the detector membrane is reduced by distribution of the strain induced by formation of the curved surface across all of the curved surface of the detector membrane, thereby allowing a decreased radius of curvature (more severe curving) as compared to without the distribution.

An optical sensor includes first and second light detectors, an optical path, and an evaluation unit. The first light detector detects light in the infrared wavelength range. A light sensitivity of the CCD sensors of the first and second light detectors differ from one another with regard to a predefined wavelength range. The first and second light detectors include pixels in columns and situated next to one another so that a first longitudinal side of the first light detector adjoins a first longitudinal side of the second light detector, and the first and second light detectors receive light via the optical path. The first and second light detectors generate first and second measuring signals, respectively, from electrical charges. The evaluation unit receives the first measuring signals at a first sampling frequency and the second measuring signals at a second sampling frequency, and combines these to form an output signal.

A detector including a detector membrane comprising a semiconductor sensor and a readout circuit, the detector membrane having a thickness of 100 micrometers or less and a curved surface conformed to a curved focal plane of an optical system imaging electromagnetic radiation onto the curved surface; and a mount attached to a backside of the detector membrane. A maximum of the strain experienced by the detector membrane is reduced by distribution of the strain induced by formation of the curved surface across all of the curved surface of the detector membrane, thereby allowing an increased radius of curvature of the curved surface as compared to without the distribution.

A semiconductor device includes n semiconductor chips stacked via electrical contacting means in the silicon substrate thickness direction, n being an integer larger than 2, a side face of the stacked semiconductor device in the substrate thickness direction being covered by a non-conductive layer. The shape of the side face with respect to a plan view of the stacked semiconductor device may be one of curved, convex, concave or circular.

A solid-state image sensor including photoelectric conversion parts having a vertical overflow drain structure is made usable as, for example, a distance measuring sensor with high accuracy. In the solid-state image sensor, a pixel array part is formed in a well region of a second conductive type formed at a surface part of a semiconductor substrate of a first conductive type. In the pixel array part, photoelectric conversion parts each of which converts incident light into signal charges and has the vertical overflow drain structure (VOD) are arranged in a matrix form. Substrate discharge pulse signal φSub for controlling potential of the VOD is applied to a signal terminal. An impurity induced part into which impurity of the first type is induced is formed below a connecting part in the semiconductor substrate.