Systems and methods for thermal radiation detection utilizing a thermal radiation detection system are provided. The thermal radiation detection system includes one or more mercury-cadmium-telluride (HgCdTe)-based photodiode infrared detectors or Indium Antimonide (InSb)-based photodiode infrared detectors and a temperature sensing circuit. The temperature sensing circuit is configured to generate signals correlated to the temperatures of one or more of the plurality of infrared sensor elements. The thermal radiation detection system also includes a signal processing circuit.

A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.

A method of fabricating a semiconductor device includes implanting dopants into a silicon substrate, and performing a thermal anneal process that activates the implanted dopants. In response to activating the implanted dopants, a layer of ultra-thin single-crystal silicon is formed in a portion of the silicon substrate. The method further includes performing a heteroepitaxy process to grow a semiconductor material from the layer of ultra-thin single-crystal silicon.

Provided is a cadmium zinc telluride (CdZnTe) single crystal including a main surface that has a high mobility lifetime product (μτ product) in a wide range, wherein the main surface has an area of 100 mm.sup.2 or more and has 50% or more of regions where the μτ product is 1.0×10.sup.−3 cm.sup.2/V or more based on the entire main surface, and a method for effectively producing the same.

An electrical device includes a substrate with a compressive layer, a neutral stress buffer layer and a tensile stress compensation layer. The stress buffer layer and the stress compensation layer may each be formed with aluminum nitride using different processing parameters to provide a different intrinsic stress value for each layer. The aluminum nitride tensile layer is configured to counteract stresses from the compressive layer in the device to thereby control an amount of substrate bow in the device. This is useful for protecting fragile materials in the device, such as mercury cadmium telluride. The aluminum nitride stress compensation layer also can compensate for forces, such as due to CTE mismatches, to protect the fragile layer. The device may include temperature-sensitive materials, and the aluminum nitride stress compensation layer or stress buffer layer may be formed at a temperature below the thermal degradation temperature of the temperature-sensitive material.

A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×10.sup.15 cm.sup.−3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.

The present disclosure provides a photodiode based on a stannous selenide sulfide nanosheet/GaAs heterojunction and a preparation method and use thereof. The photodiode comprises a structure of the stannous selenide sulfide nanosheet/GaAs heterojunction, forming Au electrodes through thermal vapor deposition on the stannous selenide sulfide nanosheet and GaAs, respectively, and conducting an annealing treatment in a protective gas at a temperature in a range of 150-250° C. The heterojunction is formed by transferring the stannous selenide sulfide nanosheet to a GaAs window, and the GaAs window is obtained by depositing a medium layer film on GaAs and etching the medium layer through lithography and an etchant.

A radiation detection probe and a manufacturing method therefor, and a radiation detection chip. The method comprises: simulating each of a plurality of cadmium zinc telluride crystals having different three-dimensional sizes; obtaining the radiation response characteristics of each cadmium zinc telluride crystal; according to the radiation response characteristics, selecting a specific cadmium zinc telluride crystal from the plurality of cadmium zinc telluride crystals, wherein the specific cadmium zinc telluride crystal is a cadmium zinc telluride crystal having optimal performance indexes corresponding to the radiation response characteristics in the plurality of cadmium zinc telluride crystals; and configuring a first electrode and a second electrode for the specific cadmium zinc telluride crystal so as to constitute the radiation detection probe.