A nuclear microbattery is disclosed comprising: a radioactive material that emits photons or particles; and at least one diode comprising a semiconductor material arranged to receive and absorb photons or particles and generate electrical charge-carriers in response thereto, wherein said semiconductor material is a crystalline lattice structure comprising Aluminium, Indium and Phosphorus.

A nuclear microbattery is disclosed comprising: a radioactive material that emits photons or particles; and at least one diode comprising a semiconductor material arranged to receive and absorb photons or particles and generate electrical charge-carriers in response thereto, wherein said semiconductor material is a crystalline lattice structure comprising Aluminium, Indium and Phosphorus.

In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.

In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.

In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.

In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.

A p+ or n+ type doping process for semiconductors, allows to implement a semiconductor with a highly doped surface layer, and it comprises the steps of: providing a substrate made of semiconductor material; depositing on a surface of 5 the substrate made of semiconductor material a thin source layer made of dopant material acting as dopant source; depositing on said source layer an additional protective surface layer made of semiconductor material; inducing liquefaction of the surface layer at least until the source layer; and cooling down the substrate surface so as to obtain the diffusion of the dopant material.

A functional element of an embodiment of the technology includes: a first region and a ring-like second region on a top surface of a semiconductor layer having an end surface, the second region surrounding the first region in a space between the first region and the end surface. The functional element of the technology includes a first functional section in the second region, the first functional section allowing for induction of carriers arising on the end surface to outside.

A functional element of an embodiment of the technology includes: a first region and a ring-like second region on a top surface of a semiconductor layer having an end surface, the second region surrounding the first region in a space between the first region and the end surface. The functional element of the technology includes a first functional section in the second region, the first functional section allowing for induction of carriers arising on the end surface to outside.

A lower electrode of a PIN diode and a second protective layer covering the PIN diode are formed not using separate mask processes, but using the same mask process using the same mask, thereby reducing the number of mask processes and thus increasing process efficiency. Further, the lower electrode of the PIN diode is patterned and then the second protective film covering the PIN diode is patterned such that both the former patterning and the latter patterning are carried out using a single mask process, thereby reduce increase in defects due to foreign materials or stains.