A surface plasmon-based photodetector includes: a silicon substrate; a grating in contact with a surface of the silicon substrate, in which the grating forms a Schottky diode with the semiconductor substrate; and a complementary-metal-oxide-semiconductor (CMOS) sample and hold stage as well as an analog-to-digital circuit (ADC) in the silicon substrate and arranged to detect electrical current generated at the Schottky diode.

A phase-locked loop (PLL) circuit, sense amplifier circuit, and method of operating a sense amplifier circuit are disclosed. The sense amplifier circuit comprises first and second operational amplifiers, each operational amplifier respectively comprising a non-inverting input terminal, an inverting input terminal, and an output stage comprising a current gating circuit having two current gating input terminals, the output stage coupled with an output terminal, the output terminal providing a feedback signal to the inverting input terminal. The input voltage signal is received across the non-inverting input terminals of the first and second operational amplifiers, and is received across the two current gating input terminals of each of the first and second operational amplifiers, wherein the sense amplifier circuit generates a sense voltage signal across the output terminals of the first and second operational amplifiers.

A phase-locked loop (PLL) circuit, sense amplifier circuit, and method of operating a sense amplifier circuit are disclosed. The sense amplifier circuit comprises first and second operational amplifiers, each operational amplifier respectively comprising a non-inverting input terminal, an inverting input terminal, and an output stage comprising a current gating circuit having two current gating input terminals, the output stage coupled with an output terminal, the output terminal providing a feedback signal to the inverting input terminal. The input voltage signal is received across the non-inverting input terminals of the first and second operational amplifiers, and is received across the two current gating input terminals of each of the first and second operational amplifiers, wherein the sense amplifier circuit generates a sense voltage signal across the output terminals of the first and second operational amplifiers.

A phase-locked loop (PLL) circuit, sense amplifier circuit, and method of operating a sense amplifier circuit are disclosed. The sense amplifier circuit comprises first and second operational amplifiers, each operational amplifier respectively comprising a non-inverting input terminal, an inverting input terminal, and an output stage comprising a current gating circuit having two current gating input terminals, the output stage coupled with an output terminal, the output terminal providing a feedback signal to the inverting input terminal. The input voltage signal is received across the non-inverting input terminals of the first and second operational amplifiers, and is received across the two current gating input terminals of each of the first and second operational amplifiers, wherein the sense amplifier circuit generates a sense voltage signal across the output terminals of the first and second operational amplifiers.

A phase-locked loop (PLL) circuit, sense amplifier circuit, and method of operating a sense amplifier circuit are disclosed. The sense amplifier circuit comprises first and second operational amplifiers, each operational amplifier respectively comprising a non-inverting input terminal, an inverting input terminal, and an output stage comprising a current gating circuit having two current gating input terminals, the output stage coupled with an output terminal, the output terminal providing a feedback signal to the inverting input terminal. The input voltage signal is received across the non-inverting input terminals of the first and second operational amplifiers, and is received across the two current gating input terminals of each of the first and second operational amplifiers, wherein the sense amplifier circuit generates a sense voltage signal across the output terminals of the first and second operational amplifiers.

A surface plasmon-based photodetector includes: a silicon substrate; a grating in contact with a surface of the silicon substrate, in which the grating forms a Schottky diode with the semiconductor substrate; and a complementary-metal-oxide-semiconductor (CMOS) sample and hold stage as well as an analog-to-digital circuit (ADC) in the silicon substrate and arranged to detect electrical current generated at the Schottky diode.