The present disclosure relates to a dual-clock generation circuit and method and an electronic device, and relates to the technical field of integrated circuits. The dual-clock generation circuit includes: a first inverter module, configured to access a first signal and output a first clock output signal; a second inverter module, configured to access a second signal and output a second clock output signal, where the first signal and the second signal are opposite clock signals; a first feedforward buffer, disposed between an input terminal of the first inverter module and an output terminal of the second inverter module, and configured to transmit the first signal to compensate for the second clock output signal.

A first flipflop outputs a first signal synchronized with a first clock signal, a second flipflop outputs a second signal synchronized with a second clock signal, and a third flipflop outputs a third signal synchronized with a third clock signal. The second flipflop includes first to fifth transistors. In the first transistor, the second clock signal is input to a first terminal and the second signal is output from a second terminal. In the second transistor, a first signal is input to a first terminal, a second terminal is electrically connected to a gate of the first transistor, and the first clock signal is input to a gate. In the third transistor, the third signal is input to a first terminal, a second terminal is electrically connected to the gate of the first transistor, and the third clock signal is input to a gate.

A flip flop standard cell that includes a data input terminal configured to receive a data signal, clock input terminal configured to receive a clock signal, a data output terminal, and a latch. A bit write circuit is configured to receive a bit write signal. The received data signal is latched and provided at the output terminal in response to the bit write signal and the clock signal. A hold circuit is configured to receive a hold signal, and the received data signal is not latched and provided at the data output terminal in response to the hold signal and the clock signal.

A semiconductor circuit includes a first circuit, a second circuit, a third circuit, and a fourth circuit. The first circuit determines a value of a first node based on a voltage level of a clock signal, and a voltage level of an enable signal or a voltage level of a scan enable signal. The second circuit determines a value of a second node based on the voltage levels of the first node and the clock signal. The third circuit determines a value of a third node based on a voltage level of the second node. The fourth circuit determines a value of a fourth node based on the voltage levels of the second node and the clock signal. The third circuit includes a first transistor and a second transistor connected in series with each other and gated to the voltage level of the second node to determine the value of the third node. The fourth circuit includes a third transistor that is gated to the voltage level of the clock signal to electrically connect the third node and the fourth node.

The invention provides a dynamic D flip-flop, and a data operation unit, a chip, a hash board and a computing device using the same. The dynamic D flip-flop comprises: an input terminal, an output terminal and at least one clock signal terminal; a first latch unit for transmitting data of the input terminal and latching the data under control of a clock signal; a second latch unit for latching data of the output terminal and inversely transmitting the data latched by the first latch unit under control of a clock signal; and an output driving unit for inverting and outputting the data received from the second latch unit; wherein the second latch unit outputs in high level, low level and high impedance states by means of a single element under control of a clock signal. Therefore, the invention can effectively reduce chip area, power consumption, and logic delay.

The power of a semiconductor device is reduced. The semiconductor device includes a latch circuit composed of a dynamic circuit. The latch circuit includes a first circuit having a decoding function, a plurality of capacitors, a plurality of clock input terminals, a signal input terminal, a first output terminal, and a second output terminal. In a period during which “H” is supplied to a first clock signal, the potential of the first capacitor is updated on the basis of the results of decoding performed by the first circuit. In a period during which “H” is supplied to a second clock signal, the potential of the second capacitor is updated on the basis of the potential of the first capacitor, and the potential of the second capacitor is supplied as a first output signal to the first output terminal. In a period during which “H” is supplied to a third clock signal, the potential of the third capacitor is updated on the basis of the potential of the second capacitor, and the potential of the third capacitor is supplied as a second output signal to the second output terminal.

Embodiments of the disclosure provide a circuit structure and related method to provide a radiation resistant memory cell. A circuit structure may include a first latch having an input node and an output node. A second latch has an input node and an output node, in which the output node of the second latch is coupled to the input node of the first latch, and the input node of the second latch is coupled to the output node of the first latch. A read/write (R/W) circuit includes a plurality of transistors coupling a word line, a bit line, and an inverted bit line to at least two outputs. One of the at least two outputs is coupled to the input node of the first latch and another of the outputs is coupled to the input node of the second latch.

The present disclosure relates to a dual-clock generation circuit and method and an electronic device, and relates to the technical field of integrated circuits. The dual-clock generation circuit includes: a first inverter module, configured to access a first signal and output a first clock output signal; a second inverter module, configured to access a second signal and output a second clock output signal, where the first signal and the second signal are opposite clock signals; a first feedforward buffer, disposed between an input terminal of the first inverter module and an output terminal of the second inverter module, and configured to transmit the first signal to compensate for the second clock output signal.

A flip flop standard cell that includes a data input terminal configured to receive a data signal, clock input terminal configured to receive a clock signal, a data output terminal, and a latch. A bit write circuit is configured to receive a bit write signal. The received data signal is latched and provided at the output terminal in response to the bit write signal and the clock signal. A hold circuit is configured to receive a hold signal, and the received data signal is not latched and provided at the data output terminal in response to the hold signal and the clock signal.

The invention provides a dynamic D flip-flop, and a data operation unit, a chip, a hash board and a computing device using the same. The dynamic D flip-flop comprises: an input terminal, an output terminal and at least one clock signal terminal; a latch unit for latching data of the input terminal and inversely transmitting the data under control of a clock signal; and an output driving unit for inverting and outputting the data received from the latch unit; wherein the latch unit outputs in high level, low level and high impedance states by means of a single element under control of a clock signal. Therefore, the invention can effectively reduce chip area, power consumption, and logic delay.