A flip-flop with glitch protection is disclosed. The flip-flop includes a differential amplifier circuit that generates amplifier output signals based on an input data and clock signals and precharges a true data node when a clock signal is inactive. A latch circuit is coupled to the differential amplifier and includes a latch node. Responsive to a current value of the input data signal having a first logic state, the latch node is set at a logic value equivalent to the precharged value during an active phase of the clock signal. Responsive to the current value of the input data signal having a second logic state complementary to the first, during the active phase of the clock signal, the latch circuit causes the latch node to be set to a logic value complementary to the precharged value, using the clock signal and the current value of the input data signal.

A data receiving circuit is provided. The data receiving circuit includes a data input circuit, a latch circuit, and a current source. The data input circuit is configured to receive an input signal. The latch circuit is configured to output an output signal in response to the input signal. The current source is configured to provide a current to the latch circuit. The current source is different from the data input circuit.

A flip-flop with glitch protection is disclosed. The flip-flop includes a differential amplifier circuit that generates amplifier output signals based on an input data and clock signals and precharges a true data node when a clock signal is inactive. A latch circuit is coupled to the differential amplifier and includes a latch node. Responsive to a current value of the input data signal having a first logic state, the latch node is set at a logic value equivalent to the precharged value during an active phase of the clock signal. Responsive to the current value of the input data signal having a second logic state complementary to the first, during the active phase of the clock signal, the latch circuit causes the latch node to be set to a logic value complementary to the precharged value, using the clock signal and the current value of the input data signal.

An in-memory computing circuit for a fully connected binary neural network includes an input latch circuit, a counting addressing module, an address selector, a decoding and word line drive circuit, a memory array, a pre-charge circuit, a writing bit line drive circuit, a replica bit line column cell, a timing control circuit, a sensitive amplifier and a NAND gate array, an output latch circuit and an analog delay chain. A parallel XNOR operation is performed in the circuit on the SRAM bit line, and the accumulation operation, activation operation and other operations are performed by the delay chain in the time domain. Partial calculation is completed while reading the data, and the delay chain with a small area occupation can be integrated with SRAM, thus reducing the energy consumption of the memory access process. Multi-column parallel computing also improves system throughput.

A data receiving circuit is provided. The data receiving circuit includes a first transistor, a second transistor, a third transistor, and a latch circuit. The first transistor has a gate configured to receive an input signal. The latch circuit is configured to output an output signal in response to the input signal. The second transistor has a gate configured to receive a first signal and a drain connected to the latch circuit. The third transistor has a gate configured to receive the first signal and a drain connected to the latch circuit. The second transistor and the third transistor are configured to provide a current to the latch circuit in response to the first signal.

A data receiving circuit is provided. The data receiving circuit includes a data input circuit, a latch circuit, and a current source. The data input circuit is configured to receive an input signal. The latch circuit is configured to output an output signal in response to the input signal. The current source is configured to provide a current to the latch circuit. The current source is different from the data input circuit.

Techniques are disclosed relating to level-shifting circuitry and time borrowing across voltage domains. In some embodiments, sense amplifier circuitry generates, based on an input signal at a first voltage level, an output signal at a second, different voltage level. Pulse circuitry may generate a pulse signal in response to an active clock edge of a clock signal that is input to the sense amplifier circuitry. Initial resolution circuitry may drive the output signal of the sense amplifier circuitry to match the value of the input signal during the pulse signal. Secondary resolution circuitry may maintain a current value of the output signal after expiration of the pulse signal. This may allow the input signal to change during the pulse, e.g., to enable time borrowing by upstream circuitry.

A D-type flip-flop (DFF) includes an input circuit having a plurality of transistors configured to receive a clock signal and a data signal, a first inverter (INV1) having a pair of transistors, the first inverter configured to receive an input voltage (x) from the input circuit at a first inverter input, the first inverter configured to provide an output voltage (y) to a first inverter output, a second inverter (INV2) coupled to the first inverter (INV1), the second inverter having a second inverter input and a second inverter output, the second inverter input coupled to the first inverter output, a third inverter (INV3) coupled to the second inverter (INV2), the third inverter having a third inverter input and a third inverter output, and a current device coupled to the first inverter output, the current device configured to provide a current at the first inverter output.

Methods, systems, and devices for feedback for multi-level signaling in a memory device are described. A receiver may use a modulation scheme to communicate information with a host device. The receiver may include a first circuit, a second circuit, a third circuit, and a fourth circuit. Each of the first circuit, the second circuit, the third circuit, and the fourth circuit may determine, for a respective clock phase, a voltage level of a signal modulated using the modulation scheme. The receiver may include a first feedback circuit, a second feedback circuit, a third feedback circuit, and a fourth feedback circuit. The first feedback circuit that may use information received from the first circuit at the first clock phase and modify the signal input into the second circuit for the second clock phase.

A level shifter includes: a first inverter configured to receive an input signal in a low voltage domain and shift the input signal from the low voltage domain to a first output signal at a first output terminal in a high voltage domain higher than the low voltage domain in response to a logical high state of a first clock signal in the low voltage domain; a second inverter configured to receive a complement of the input signal and shift the complement of the input signal from the low voltage domain to a second output signal at a second output terminal in the high voltage domain in response to the logical high state; a first NMOS sensing transistor and a second NMOS sensing transistor; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the first clock signal.