A comparator including: first and second input transistors connected to control signals at first and second nodes of the comparator; latch circuitry; at least one controllable offset-correction component having an input terminal and connected to control the signal at one of the first and second nodes based on an offset-correction signal provided at its input terminal; for each controllable offset-correction component, an offset correction circuit configured to provide the offset-correction signal provided at its input terminal; and control circuitry. The control circuitry controls the at least one offset-correction circuit to: control an amount by which the offset-correction signal is adjusted; and/or in a bypass operation, connect the input terminal of the at least one controllable offset-correction component to a bypass-operation reference voltage supply; and/or in a maintenance operation, control the charging-operation voltage supply and/or the bypass-operation voltage supply to control leakage of the charge stored on the holding capacitor.

In one embodiment, a voltage level shifter includes a first p-type metal-oxide-semiconductor (PMOS) transistor having a gate configured to receive an input signal in a first power domain, and a second PMOS transistor, wherein the first and second PMOS transistors are coupled in series between a supply voltage of a second power domain and a node. The voltage level shifter also includes an inverter having an input coupled to the node and an output coupled to a gate of the second PMOS transistor, and a first n-type metal-oxide-semiconductor (NMOS) transistor having a gate configured to receive the input signal in the first power domain, wherein the first NMOS transistor is coupled between the node and a ground.

An output gain of a latch circuit is increased. The latch circuit includes a first circuit, a second circuit, and first to fourth transistors. The latch circuit includes a first input/output terminal and a second input/output terminal. The first circuit and the second circuit have a function of a current source. In the case where the third transistor is off and the fourth transistor is on, the latch circuit is supplied with a first input signal supplied to the first input/output terminal and a second input signal supplied to the second input/output terminal. In the case where the third transistor is on and the fourth transistor is off, an inverted signal of the first input signal is output to the first input/output terminal of the latch circuit, and an inverted signal of the second input signal is output to the second input/output terminal of the latch circuit. The first circuit and the second circuit increase the output gain of the latch circuit.

Methods, systems, and devices for feedback for multi-level signaling in a memory device are described. A receiver may use a modulation scheme to communicate information with a host device. The receiver may include a first circuit, a second circuit, a third circuit, and a fourth circuit. Each of the first circuit, the second circuit, the third circuit, and the fourth circuit may determine, for a respective clock phase, a voltage level of a signal modulated using the modulation scheme. The receiver may include a first feedback circuit, a second feedback circuit, a third feedback circuit, and a fourth feedback circuit. The first feedback circuit that may use information received from the first circuit at the first clock phase and modify the signal input into the second circuit for the second clock phase.

The present technology may include a first detection unit configured to generate an output signal by detecting a level of an input terminal in response to a transition of a control clock signal during a normal read operation, and a second detection unit configured to generate the output signal by detecting the level of the input terminal regardless of the transition of the control clock signal during a state information read operation.

A flip flop includes a precharge circuit configured to charge a first node by bridging a power voltage node and the first node, the charging of the first node by the precharge circuit according to a voltage level of a clock signal, the charging of the first node by the precharge circuit based on at least two PMOS transistors arranged in series, a discharge circuit configured to discharge the first node by bridging the first node and a ground node, the discharging of the first node according to an input signal and the clock signal, and a second node configured to be charged or discharged, the charging and the discharging of the second node according to a voltage level of the first node.

A level shifter comprises a first control switch (207) for connecting an output terminal to a first supply voltage (VDDH) to set an output signal to be high, and a second control switch (208) for connecting the output terminal to a signal ground (GND) to set the output signal to be low. The level shifter comprises a pre-charging switch (210) for connecting the output terminal to the first supply voltage, and an input gate circuit (211) for controlling an ability of an input signal to control the second control switch. The level shifter comprises a keeper circuit (212) for controlling the first control switch based on the output signal. The first control switch is controlled with the first supply voltage when the output signal is low, and with a second supply voltage that is between the first supply voltage and the signal ground when the output signal is high.

A semiconductor circuit includes a first circuit determining a voltage of a first node in response to the clock signal and the input data signal, a first latch determining a voltage of a second node in response to the clock signal and the voltage of the first node, and a second circuit determining a voltage of a third node in response to the clock signal and the voltage of the second node. The output data signal is provided in response to the voltage of the third node, the clock signal controls a flip-flop operation with respect to the input data signal and the output data signal, and respective voltages are maintained constant at the first node, second node and third node regardless of level transitions in the clock signal so long as a level of the input data signal is maintained constant.

A semiconductor device comprising a first supply voltage, a second supply voltage, different from the first supply voltage; and a switching circuit. The switching circuit comprises an input configured to receive an input signal corresponding to the first supply voltage and an output configured to output an output signal corresponding to the second supply voltage. The switching circuit is a combined latch with a built-in level shifter that provides latching functionality and level shifting functionality and a leakage path is cut-off when the switching circuit is providing latching functionality.

A data receiving circuit is provided. The data receiving circuit includes a first transistor, a second transistor, a third transistor, and a latch circuit. The first transistor has a gate configured to receive an input signal. The latch circuit is configured to output an output signal in response to the input signal. The second transistor has a gate configured to receive a first signal and a drain connected to the latch circuit. The third transistor has a gate configured to receive the first signal and a drain connected to the latch circuit. The second transistor and the third transistor are configured to provide a current to the latch circuit in response to the first signal.