A method for manufacturing a circuit board embeds a portion of an outer circuit layer in an outer dielectric layer which increases contact area between the outer circuit layer and the outer dielectric layer, improving adhesion between the outer circuit layer and the outer dielectric layer, and reducing a thickness of the outer circuit substrate, thereby reducing the overall thickness of the finished circuit board.

A process for making a circuit board modifies a catalytic laminate having a resin rich surface with catalytic particles dispersed below a surface exclusion depth. The catalytic laminate is subjected to a drilling and resin-rich surface removal operation to expose the catalytic particles, followed by an electroless plating operation which deposits a thin layer of conductive material on the surface. A photo-masking step follows to define circuit traces, after which an electro-plating deposition occurs, followed by a resist strip operation and a quick etch to remove electroless copper which was previously covered by photoresist.

A method of attaching a chip to the substrate with an outer layer comprising via pillars embedded in a dielectric such as solder mask, with ends of the via pillars flush with said dielectric, the method comprising the steps of: (o) optionally removing organic varnish, (p) positioning a chip having legs terminated with solder bumps in contact with exposed ends of the via pillars, and (q) applying heat to melt the solder bumps and to wet the ends of the vias with solder.

The present invention relates to a method for producing a flexible substrate. According to the method of the present invention, a flexible substrate layer can be easily separated from a carrier substrate even without the need for laser or light irradiation so that a device can be prevented from deterioration of reliability and occurrence of defects caused by laser or light irradiation. In addition, according to the method of the present invention, a flexible substrate can be continuously produced in an easier manner based on a roll-to-roll process.

A circuit board includes an inner circuit substrate and an outer circuit substrate electrically connected to the inner circuit substrate. The outer circuit substrate includes an outer dielectric layer and an outer circuit layer facing the inner circuit substrate embedded in the outer dielectric layer. A portion of the outer circuit layer facing away from the inner circuit substrate protruding from the outer dielectric layer. The circuit board can increase contact area between the outer circuit layer and the outer dielectric layer, improving adhesion between the outer circuit layer and the outer dielectric layer, and reducing a thickness of the outer circuit substrate, thereby reducing the overall thickness of the circuit board.

An electrical device, comprising a softening polymer layer, an electrode layer on a surface of the softening polymer layer and a cover polymer layer on the surface of the softening polymer layer. An opening in the polymer cover layer is filled with a reflowed solder, one end of the reflowed solder, located inside the opening, contacts a contact pad site portion of the electrode layer, and another end of the reflowed solder contacts an electrical connector electrode of the device.

A process for forming a graphene circuit pattern on an object is described. A graphene layer is grown on a metal foil. A bonding layer is formed on a protective film and a surface of the bonding layer is roughened. The graphene layer is transferred onto the roughened surface of the bonding layer. The protective film is removed and the bonding layer is laminated to a first core dielectric substrate. The metal foil is etched away. Thereafter the graphene layer is etched using oxygen plasma etching to form graphene circuits on the first core dielectric substrate. The first core dielectric substrate having graphene circuits thereon is bonded together with a second core dielectric substrate wherein the graphene circuits are on a side facing the second core dielectric substrate wherein an air gap is left therebetween.

The present invention provides a micropackaged device comprising: a substrate for securing a device; a corrosion barrier affixed to said substrate; optionally at least one feedthrough disposed in said substrate to permit at least one input and or at least one output line into said micropackaged device; and an encapsulation material layer configured to encapsulate the micropackaged device.

A wafer-level manufacturing method for embedding a passive element in a glass substrate is disclosed. A highly doped silicon wafer is dry etched to form a highly doped silicon mould wafer, containing highly doped silicon passive component structures mould seated in cavity arrays; a glass wafer is anodically bonded to the highly doped silicon mould wafer in vacuum pressure to seal the cavity arrays; the bonded wafers are heated so that the glass melts and fills gaps in the cavity arrays, annealing and cooling are performed, and a reflowed wafer is formed; the upper glass substrate of the reflowed wafer is grinded and polished to expose the highly doped silicon passives; the passive component structure mould embedded in the glass substrate is fully etched; the blind holes formed in the glass substrates after the passive component structure mould has been etched is filled with copper by electroplating; the highly doped silicon substrate and unetched silicon between the cavity arrays are etched, and several glass substrates embedded with a passive element are obtained; to form electrodes for the passives, a metal adhesion layer is deposited, and a metal conductive layer is electroplated. The process is simple, costs are low, and the prepared passive elements have superior performance.

A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a conductive structure and at least one conductive through via. The conductive structure includes a plurality of dielectric layers, a plurality of circuit layers in contact with the dielectric layers, and a plurality of dam portions in contact with the dielectric layers. The dam portions are substantially arranged in a row and spaced apart from one another. The conductive through via extends through the dam portions.