A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

The present application relates to an organic electronic device, said electronic device comprising a multi-layer electrode as well as an organic semiconducting layer, as well as to a method for producing such organic electronic device.

Disclosed are a polymer including at least one structural unit with a moiety represented by Chemical Formula 1, an organic thin film including the polymer, a thin film transistor, and an electronic device. ##STR00001## In Chemical Formula 1, Ar.sup.1 to Ar.sup.3, L.sup.1, L.sup.2, and R.sup.1 to R.sup.6 are the same as described in the detailed description.

Provided are a polymer semiconductor including a first structural unit represented by Chemical Formula 1 and a second structural unit represented by Chemical Formula 2, a stretchable polymer thin film including the same, and an electronic device.

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Definitions of Chemical Formulas 1 and 2 are as described in the detailed description.

The present invention provides an intermediate compound for easily producing a compound having an azaperylene skeleton. Another object of the present invention is to provide a method for easily producing a compound having an azaperylene skeleton.

The compound of the present invention is a compound represented by Formula (I), or a compound represented by Formula (II).

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Provided is a heterofullerene where n number (where n is a positive even number) of carbon atoms constituting a fullerene are substituted by n number of boron atoms or n number of nitrogen atoms.

The purpose of the present invention is to provide: an organic semiconductor composition suitable for preparing an organic thin film by a solution method, an organic thin film obtained by using the organic semiconductor composition, and a practical field effect transistor which uses the organic thin film. The practical field effect transistor which uses the organic thin film has small variances in mobility and a threshold value, while maintaining a high mobility. Disclosed in the present specification is an organic semiconductor composition including an organic semiconductor compound, an insulation compound, an organic solvent A, which is a good solvent for the insulation compound, and an organic solvent B, which is a poor solvent for the insulation compound and has a higher boiling point than the organic solvent A. The mass ratio a:b of the organic solvent A and the organic solvent B is 1:8 to 8:1.

A sensor sheet includes unit sensor sheets configured to detect a physical property value at multiple points on a sensor layer, each unit sensor sheet including a first substrate, and an electrode layer and the sensor layer sequentially formed on one side of the first substrate; and a wiring substrate to which the unit sensor sheets are configured to be coupled, the wiring substrate including a second substrate, and a plurality of wirings provided on one side of the second substrate. One side of the wiring substrate and one side of each unit sensor sheet are facing each other. A conductive bonding member configured to electrically couple each unit sensor sheet and the wiring substrate with each other, is included between the electrode layer of each unit sensor sheet and at least one of the wirings of the wiring substrate.

A method of preparing a carbon nanotube monolayer film includes applying a bifunctional hydrogen-bond linker onto a substrate to prepare a surface-treated substrate, mixing carbon nanotubes having a heteroatom-containing aromatic polymer coating film with a hydrophobic solvent to obtain a composition and contacting the surface-treated substrate with the composition, and heat-treating the surface-treated substrate contacting the composition.

An integrated circuit includes a memory array that stores data, a rectifying circuit that rectifies an alternating current and generates a direct-current voltage, and a logic circuit that reads data stored in a memory. The memory array includes a first semiconductor memory element having a first semiconductor layer. The rectifying circuit includes a second semiconductor rectifying element having a second semiconductor layer. The logic circuit includes a third semiconductor logic element having a third semiconductor layer. The second semiconductor layer is a functional layer exhibiting a rectifying action and the third semiconductor layer is a channel layer of a logic element. All the first, second and third semiconductor layers, the functional layer exhibiting a rectifying action and the channel layer are formed of the same material including at least one selected from an organic semiconductor, a carbon nanotube, graphene, or fullerene.