Electronic ratchet devices comprising a pair of first and second electrodes; a dielectric layer; a gate electrode layer; and a transport layer are disclosed herein.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

A thin film transistor, a manufacturing method of the same, and a CMOS inverter are provided. The thin film transistor includes a base substrate, a dielectric layer, and a semiconductor layer. A first channel is provided between the source and the drain. Carbon nanotubes are provided in the first channel. A second channel is provided between the drain and the gate. An ion gel is provided in the second channel. By regulating a composition of the ion gel and a content of a dopant, a threshold voltage of a carbon nanotube thin film transistor is effectively controlled.

A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduced the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity.

Devices, structures, materials and methods for carbon enabled vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Carbon electrodes (such as from graphene) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, carbon electrodes and relevant substrates and gates are utilized to construct LETs, including heterojunction VOLETs.

The present invention provides a liquid crystal display device including: a liquid crystal panel including a viewing surface side substrate, a liquid crystal layer, and a back surface side substrate; and a backlight including a reflector facing the back surface side substrate, wherein the liquid crystal panel in a plan view includes multiple pixel regions and a non-display region between the pixel regions, in the pixel regions, color filters are disposed, in the non-display region, a gate electrode layer, a source-drain electrode layer, and a semiconductor layer are disposed, the back surface side substrate includes a reflective surface facing the backlight in at least part of the non-display region, and the reflective surface is constituted by a metal material having a higher reflectance than a metal material contained in portions of the source-drain electrode layer that are connected to the semiconductor layer.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including carbon nanotubes (CNTs) embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an interlayer dielectric (ILD) layer is formed over the doped source/drain region and the sacrificial gate structure, a source/drain opening is formed by patterning the ILD layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.