Thin-film transistor and method for manufacturing same, array substrate, and display device

Abstract

Disclosed in the present invention are a method for manufacturing a thin-film transistor, an array substrate, and a display device. The method includes: forming a buffer layer on a substrate; forming a polysilicon layer on the buffer layer; performing a patterning process on the polysilicon layer, to form an active layer; depositing a gate insulating layer on the active layer; depositing a gate metal layer on the gate insulating layer, and performing dry etching on the gate metal layer by using the patterning process and by using a gas containing CO as an etching gas, to form a gate; performing ion implantation on the active layer by using the gate as a mask, to form a source region and a drain region; and depositing a passivation layer on the gate, forming through holes in the gate insulating layer and the passivation layer, and manufacturing a source and a drain.

Claims

1. A method for manufacturing a thin-film transistor, comprising: forming a buffer layer on a substrate; forming a polysilicon layer on the buffer layer; performing a patterning process on the polysilicon layer, to form an active layer; depositing a gate insulating layer on the active layer; depositing a gate metal layer on the gate insulating layer, and performing dry etching on the gate metal layer by using the patterning process and by using a gas containing CO as an etching gas, to form a gate; a material of the gate metal layer is molybdenum, tungsten, or a molybdenum-tungsten alloy performing ion implantation on the active layer by using the gate as a mask, to form a source region and a drain region; and depositing a passivation layer on the gate, forming through holes in the gate insulating layer and the passivation layer, and manufacturing a source metal layer and a drain metal layer; before the performing dry etching on the gate metal layer by using a gas containing CO as an etching gas, to form a gate, further comprising: performing tentative dry etching on the gate metal layer by using a gas containing SF.sub.6 as the etching gas, to etch away a gate metal layer of a first thickness, so that a gate metal layer of a second thickness is left; a flow of the gas SF.sub.6 is 400 sccm to 600 sccm.

2. The method for manufacturing the thin-film transistor according to claim 1, wherein tentative dry etching is performed on the gate metal layer by using a gas, as the etching gas obtained by mixing SF.sub.6 and at least one of a gas O.sub.2, an inert gas, the gas CO, and a gas Cl.sub.2, to etch away the gate metal layer of the first thickness, so that the gate metal layer of the second thickness is left.

3. The method for manufacturing the thin-film transistor according to claim 1, wherein a ratio of the first thickness to the second thickness is 1 to 2:1.

4. The method for manufacturing the thin-film transistor according to claim 1, wherein the second thickness is 50 nm to 150 nm.

5. The method for manufacturing the thin-film transistor according to claim 1, wherein a thickness of the gate metal layer is 100 nm to 800 nm.

6. The method for manufacturing the thin-film transistor according to claim 5, wherein power of a plasma radio source of an etcher is 4000 W to 6000 W.

7. The method, for manufacturing the thin-film transistor according to claim 1, wherein a thickness of the passivation layer is 200 nm to 800 nm.

8. The method for manufacturing the thin-film transistor according to claim 7, wherein power of a biasing radio source is 800 W to 1200 W.

9. The method for manufacturing the thin-film transistor according to claim 1, wherein plasma etching is performed on the gate metal layer by using the gas containing CO as the etching gas, to form a gate.

10. The method for manufacturing the thin-film transistor according to claim 9, wherein an air pressure in an etching chamber is 4 Pa to 6 Pa.

11. The method for manufacturing the thin-film transistor according to claim 1, wherein a flow of the gas CO is 400 sccm to 600 sccm.

12. The method for manufacturing the thin-film transistor according to claim 1, wherein dry etching is performed on the gate metal layer by using a gas, as an etching gas, obtained by mixing the gas CO and a gas O.sub.2, to form a gate.

13. The method for manufacturing the thin-film transistor according to claim 1, wherein dry etching is performed on the gate metal layer by using a gas, as an etching gas, obtained by mixing the gas CO and an inert gas, to form a gate.

14. The method for manufacturing the thin-film transistor according to claim 1, wherein dry etching is performed on the gate metal layer by using a gas, as an etching gas, obtained by mixing the gas CO and a gas Cl.sub.2, to form a gate.

15. A thin-film transistor, manufactured by using the manufacturing method according to claim 1.

16. An array substrate, comprising a substrate, and a gate line, a data cable, a pixel electrode, and the thin-film transistor according to claim 15 that are disposed on the substrate.

17. A display device, comprising the array substrate according to claim 15.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) To better describe and illustrate embodiments and/or examples of those inventions disclosed herein, reference may be made to one or more accompanying drawings. Additional details or examples used to describe the accompanying drawings should not be considered as limiting the scope of any of the disclosed inventions, the currently described embodiments and/or examples, and a currently understood best mode of these inventions.

(2) FIG. 1 is a schematic flowchart of a method for manufacturing a thin-film transistor according to an embodiment; and

(3) FIG. 2A to FIG. 2G are respectively schematic structural diagrams generated in steps in a process of manufacturing a thin-film transistor shown in FIG. 1.

DETAILED DESCRIPTION OF THE INVENTION

(4) To facilitate understanding of this application, this application is more comprehensively described below with reference to the related accompanying drawings. Preferred implementations of this application are provided in the accompanying drawings. However, this application can be implemented in many different forms, and is not limited to the implementations described in the specification. In contrast, an objective of providing these implementations is to provide a more thorough and comprehensive understanding of disclosed content of this application

(5) Unless otherwise defined, all technical and scientific terms used in the specification are the same as meanings that are commonly understood by a person of ordinary skill in the art and that belong to this application. The terms used in the specification of this application are only for the purpose of describing specific implementations, and are not intended to limit this application. The term “and/or” used in the specification includes any and all combinations of one or more of associated listed items.

(6) For example, a schematic flowchart of a method for manufacturing a thin-film transistor includes: forming a buffer layer on a substrate; forming a polysilicon layer on the buffer layer; performing a patterning process on the polysilicon layer, to form an active layer; depositing a gate insulating layer on the active layer; depositing a gate metal layer on the gate insulating layer, and performing dry etching on the gate metal layer by using the patterning process and by using a gas containing CO as an etching gas, to form a gate; performing ion implantation on the active layer by using the gate as a mask, to form a source region and a drain region; and depositing a passivation layer on the gate, forming through holes in the gate insulating layer and the passivation layer, and manufacturing a source and a drain.

(7) In the method for manufacturing the thin-film transistor in this embodiment, in the process of etching the gate metal layer by using the patterning process to form the gate, the gas containing CO is used as the etching gas, and a generated reaction resultant has high vapor pressure, does not adhere to an etching chamber, and causes no chamber pollution. In addition, the gas CO, as the main etching gas, also etches away no gate insulating film under the gate metal layer.

(8) For example, as shown in FIG. 1, a method for manufacturing a thin-film transistor specifically includes following steps.

(9) Step 110: Form a buffer layer on a substrate.

(10) Referring to FIG. 2A, a buffer layer 200 is formed on a clean substrate 100, and the substrate 100 may be a glass substrate or a flexible substrate. The formed buffer layer 200 may increase an adherence degree between a to-be-formed amorphous silicon layer and the substrate. In addition, metal ions in the substrate may be further prevented from spreading to the active layer, thereby reducing impurity defects and leakage currents.

(11) Specifically, one buffer layer having a thickness is deposited on the glass substrate through plasma enhanced chemical vapor deposition (PECVD). A deposition material may be a single-layer silicon oxide (SiO.sub.x) film or a silicon nitride (SiN.sub.x) film, or a stack of silicon oxide (SiO.sub.x) and silicon nitride (SiN.sub.x).

(12) A reaction gas forming the SiN.sub.x film may be a gas obtained by mixing SiH.sub.4, NH.sub.3, and N.sub.2 or a gas obtained by mixing SiH.sub.2Cl.sub.2, NH.sub.3, and N.sub.2. A reaction gas forming the SiO.sub.x film may be a gas obtained by mixing SiH.sub.4 and N2O or a gas obtained by mixing SiH.sub.4 and tetraethyl orthosilicate (TEOS).

(13) Step 120: Deposit an amorphous silicon layer on the buffer layer, and perform laser annealing on the amorphous silicon layer, to form a polysilicon layer.

(14) For example, the amorphous silicon layer is deposited on the buffer layer by using a plasma enhanced chemical vapor deposition (PECVD) process. For another example, deposition temperature is usually controlled to be lower than 500° C.

(15) In this embodiment, a thickness of the amorphous silicon layer is 40 nm to 60 nm. Certainly, a proper thickness may also be selected based on a specific process requirement. For example, the thickness of the amorphous silicon layer is 42 nm to 55 nm. For another example, the thickness of the amorphous silicon layer is 45 nm, 48 nm, 50 nm, 51 nm, 52 nm, or 54 nm.

(16) For example, a xenon chloride (XeCl) excimer laser, a krypton fluoride (KrF) excimer laser, an argon fluoride (ArF) excimer laser, or the like is used for laser annealing. For example, a wavelength of 308 nm is used for excimer laser annealing. A laser beam is a linear light source after passing through an optical system.

(17) For another example, a pulse repetition ratio (pulse repetition ratio) of excimer laser annealing is 300 Hz to 800 Hz. For another example, a pulse repetition ratio of excimer laser annealing is 400 Hz to 600 Hz. For another example, a scan pitch (scan pitch) is 15 μm to 30 μm. For another example, a laser energy density is 150 mJ/cm.sup.2 to 600 mJ/cm.sup.2. For another example, a laser energy density is 350 mJ/cm.sup.2 to 500 mJ/cm.sup.2. For another example, a scan rate is preferably 0.5 mm/s to 50 mm/s. For another example, a scan rate is 0.5 mm/s to 50 mm/s or 1 mm/s to 30 mm/s. For another example, a scan rate is 2 mm/s to 10 mm/s.

(18) Preferably, before the laser annealing process is performed, dehydrogenation processing needs to be performed on the amorphous silicon layer, so that a hydrogen content decreases to be lower than 2%, thereby avoiding hydrogen explosion. For example, hydrogen is discharged from the amorphous silicon layer through thermal annealing.

(19) Step 130: Perform a patterning process on the polysilicon layer, to form an active layer.

(20) For example, specifically, the step includes the following steps.

(21) Step 1: Form a mask by using a photoetching process, and form a pattern through dry etching, to form the active layer 300 including a source region, a drain region, and a channel region. For a cross section of a structure obtained after step 1 is completed, refer to FIG. 2B.

(22) Step 2: Perform ion implantation on the active layer, to form channel doping.

(23) To dope a channel is to adjust a threshold voltage of a device. For example, when a threshold voltage of the thin-film transistor needs to move to a positive direction, the active layer is doped with boron. When the threshold voltage of the thin-film transistor needs to move to a negative direction, the active layer is doped with phosphorus or arsenic. However, if the threshold voltage does not need to be adjusted based on the process, no ion implantation needs to be performed on the active layer for channel doping.

(24) Based on a requirement of the threshold voltage of the thin-film transistor, an implanted medium is a gas containing arsenic or phosphorus. For example, when the gas containing arsenic needs to be implanted, for example, a gas obtained by mixing B.sub.2He and H.sub.2 is used as an implanted medium, for another example, a ratio of B.sub.2He to H.sub.2 is 1% to 30%, an implantation energy range is 2 KeV to 50 KeV, a preferred energy range is 4 KeV to 10 KeV, and an implantation dose range is 0 atoms/cm.sup.3 to 5×10.sup.13 atoms/cm.sup.3. Preferably, the implantation dose range is 0 atoms/cm.sup.3 to 9×10.sup.12 atoms/cm.sup.3. For another example, when the gas containing phosphorus needs to be implanted, for example, a gas obtained by mixing PH.sub.3 and H.sub.2 is used as an implanted medium, for example, a ratio of PH.sub.3 to H.sub.2 is 1% to 30%, an implantation energy range is 5 KeV to 50 KeV, a preferred energy range is 7 KeV to 20 KeV, and an implantation dose range is 0 atoms/cm.sup.3 to 5×10.sup.13 atoms/cm.sup.3. Preferably, the implantation dose range is 0 atoms/cm.sup.3 to 9×10.sup.12 atoms/cm.sup.3.

(25) Step 140: Deposit a gate insulating layer 400 on the active layer 300. For a cross section of a structure obtained after the step is completed, refer to FIG. 2C.

(26) For example, the gate insulating layer is formed, through chemical vapor deposition, on the substrate on which the active layer is formed. For another example, deposition temperature is usually controlled to be lower than 500° C. For another example, a thickness of the gate insulating layer may be 80 nm to 200 nm, or a proper thickness may be selected based on a specific process requirement. For another example, the gate insulating layer uses a single layer of silicon oxide or silicon nitride, or a stack of the two.

(27) Step 150: Deposit a gate metal layer on the gate insulating layer 400, and perform dry etching on the gate metal layer by using the patterning process and by using a gas containing CO as an etching gas, to form a gate 500. For a cross section of a structure obtained after the step is completed, refer to FIG. 2D.

(28) For example, the gate metal layer is deposited by using a method such as sputtering, thermal evaporation, plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), or electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-CVD), and then exposure, development, and etching are performed by using a mask (mask) and by using the patterning process, to pattern the gate metal layer to form a gate.

(29) For example, a material of the gate metal layer is molybdenum, tungsten, or a molybdenum-tungsten alloy. For another example, a combination of the foregoing several materials is used. In this embodiment, a thickness of the gate metal layer is 100 nm to 800 nm. For example, the thickness of the gate metal layer is 400 nm. Certainly, a proper thickness of the gate metal layer may also be selected based on a specific process requirement.

(30) In the dry etching process, the gas containing CO is used as the etching gas. For example, dry etching is performed as reactive ion etching. For example, dry etching is performed as plasma etching. For example, dry etching is performed as inductance coupling plasma etching. For example, when plasma etching is performed on the gate metal layer by using the gas containing CO as the etching gas, a plasma radio source power (source power) of an etcher is 4000 W to 6000 W, and a bias radio source power (bias power) is 800 W to 1200 W. For example, the plasma radio source power (source power) of the etcher is 5000 W. For example, the bias radio source power (bias power) is 1000 W. For example, air pressure in an etching chamber is 4 Pa to 6 Pa. For example, the air pressure in the etching chamber is 5 Pa. For example, a flow of the gas CO is 400 sccm to 600 sccm. For example, the flow of the gas CO is 500 sccm.

(31) The gate metal layer is deposited on the gate insulating layer, and dry etching is performed on the gate metal layer by using the patterning process and by using the gas containing CO as the etching gas, for example, to form the gate. For example, dry etching is performed on the gate metal layer by using a gas, as the etching gas, obtained by mixing the gas CO and a gas O.sub.2, to form a gate. For example, dry etching is performed on the gate metal layer by using a gas, as the etching gas, obtained by mixing the gas CO and an inert gas (such as He, Ar, or Ne), to form a gate. For example, dry etching is performed on the gate metal layer by using a gas, as the etching gas, obtained by mixing the gas CO and a gas Cl.sub.2, to form a gate. For example, dry etching is performed on the gate metal layer by using a gas, as the etching gas, obtained by mixing CO and at least one of a gas O.sub.2, an inert gas, and a gas Cl.sub.2, to form a gate.

(32) In this embodiment, for example, a material of the gate metal layer is Mo. If CO is used as the main etching gas for a reaction, to generate Mo(CO).sub.6, at a process temperature of 80° C., vapor pressure of Mo(CO).sub.6 is 1.0*(e.sup.1 to e.sup.2) mmHg. However, if a gas obtained by mixing Cl.sub.2 and O.sub.2 as the etching gas for a reaction, to generate MoCl.sub.2O.sub.2, MoCl.sub.4O, or the like, at a process temperature of 80° C., vapor pressure of MOCl.sub.2O.sub.2 is around 5.0*(e.sup.−1 to e.sup.0) mmHg, and vapor pressure of MOCl.sub.4O is around 5.0*(e.sup.−1 to e.sup.0) mmHg. Therefore, it may be learned that vapor pressure of a reaction resultant obtained by using CO as the main etching gas is far greater than vapor pressure of a reaction resultant obtained by using the gas, as the etching gas, obtained by mixing Cl.sub.2 and O.sub.2. Therefore, the reaction resultant obtained by using CO as the main etching gas has higher vapor pressure, and does not adhere to the etching chamber, so that chamber pollution can be avoided. In addition, the gas CO, as the main etching gas, also etches away no gate insulating film under the gate metal layer.

(33) To reduce a time for a process of forming the gate by using the gate metal layer, for example, in a patterning process, when an etching process is performed after exposure and development are performed by using a mask (mask), before dry etching is performed on the gate metal layer by using the patterning process and by using the gas containing CO as the etching gas, to form the gate, the method further includes the following step:

(34) performing tentative dry etching on the gate metal layer by using a gas containing SF.sub.6 as the etching gas, to etch away a gate metal layer having a first thickness, so that a gate metal layer having a second thickness remains.

(35) In other words, two-step etching is performed: first-step etching and second-step etching. During first-step etching, tentative dry etching is performed on the gate metal layer by using the gas containing SF.sub.6 as the etching gas, to etch away the gate metal layer having the first thickness, so that the gate metal layer having the second thickness remains. During second-step etching, dry etching is performed on the remaining gate metal layer having the second thickness by using the gas containing CO as the etching gas, to form a gate. For example, during first-step etching, a flow of the gas SF.sub.6 is 400 sccm to 600 sccm. For example, the flow of the gas SF.sub.6 is 500 sccm.

(36) Tentative dry etching is performed on the gate metal layer by using the gas containing SF.sub.6 as the etching gas, to etch away the gate metal layer having the first thickness, so that the gate metal layer having the second thickness remains. For example, tentative dry etching is performed on the gate metal layer by using the gas containing SF.sub.6 as the etching gas, to etch away the gate metal layer having the first thickness, so that the gate metal layer having the second thickness remains. For example, tentative dry etching is performed on the gate metal layer by using a gas, as the etching gas, obtained by mixing the gas SF.sub.6 and the gas O.sub.2, to etch away a gate metal layer having a first thickness, so that a gate metal layer having a second thickness remains. For example, tentative dry etching is performed on the gate metal layer by using a gas, as the etching gas, obtained by mixing the gas SF.sub.6 and the inert gas (such as He, Ar, or Ne), to etch away a gate metal layer having a first thickness, so that a gate metal layer having a second thickness remains. Tentative dry etching is performed on the gate metal layer by using a gas, as the etching gas, obtained by mixing the gas SF.sub.6, the gas CO, and the gas Cl.sub.2, to etch away a gate metal layer having a first thickness, so that a gate metal layer having a second thickness remains. For example, tentative dry etching is performed on the gate metal layer by using a gas, as the etching gas, obtained by mixing SF.sub.6 and at least one of the gas O.sub.2, the inert gas, the gas CO, and the gas Cl.sub.2, to etch away the gate metal layer having a first thickness, so that the gate metal layer having a second thickness remains.

(37) For example, tentative dry etching is performed on the gate metal layer by using the gas, as the etching gas, obtained by mixing SF and O.sub.2, to etch away the gate metal layer having the first thickness, so that the gate metal layer having the second thickness remains. During first-step etching, a flow of the gas SF.sub.6 is 400 sccm to 600 sccm, and a flow of O.sub.2 is 100 sccm to 300 sccm. For example, the flow of the gas SF.sub.6 is 500 sccm, and the flow of the gas O.sub.2 is 200 sccm. For example, during second-step etching, a flow of the gas CO is 400 sccm to 600 sccm. For example, the flow of the gas CO is 500 sccm.

(38) Because an etching rate obtained by using the gas containing SF.sub.6 as the etching gas is high, the gas containing SF.sub.6 is first used as the etching gas to etch away the gate metal layer having the first thickness, and then the gas containing CO is then used as the etching gas to etch away the remaining gate metal layer having the second thickness, to avoid etching away a gate insulating film under the gate metal layer, thereby greatly reducing the time for the process of forming the gate by using the gate metal layer.

(39) For example, a ratio of the first thickness to the second thickness is 1 to 2:1. For example, a ratio of the first thickness to the second thickness is 1.5:1. For example, a thickness of the gate metal layer is 250 nm, the first thickness is 150 nm, and the second thickness is 100 nm. The gas containing SF.sub.6 is first used as the etching gas to etch away the gate metal layer having the first thickness, and then the gas containing CO is then used as the etching gas to etch away the remaining gate metal layer having the second thickness, to avoid etching away the gate insulating film under the gate metal layer, thereby greatly reducing the time for the process of forming the gate by using the gate metal layer. For example, the second thickness is 50 nm to 150 nm. For example, the second thickness is 100 nm. In this way, regardless of the thickness of the gate metal layer, only a small part of the gate metal layer is reserved and etched by using the gas containing CO, thereby accelerating a rate in the entire etching process, and reducing the time for the process of forming the gate by using the gate metal layer.

(40) Step 160: Perform ion implantation on the active layer 300 by using the gate 500 as the mask, to from a source region 310 and a drain region 320. For a cross section of a structure obtained after the step is completed, refer to FIG. 2E.

(41) For example, a manner of performing ion implantation by using a mass analyzer is used in this embodiment. For another example, based on a design requirement, an implanted medium is a gas containing arsenic or phosphorus, to form a P-type or N-type thin-film transistor. For example, when the gas containing arsenic is used, for example, a gas obtained by mixing B.sub.2H.sub.6 and H.sub.2 is used as an implanted medium, for example, a ratio of B.sub.2H.sub.6 to H.sub.2 is 1% to 30%, an implantation energy range is 5 KeV to 50 KeV, and a preferred energy range is 20 KeV to 30 KeV, and an implantation dose range is 1×10.sup.13 atoms/cm.sup.3 to 1×10.sup.17 atoms/cm.sup.3. Preferably, the implantation dose range is 5×10.sup.14 atoms/cm.sup.3 to 5×10.sup.15 atoms/cm.sup.3. For another example, when the gas containing phosphorus is used, for example, a gas obtained by mixing PH.sub.3 and H.sub.2 is used as an implanted medium, for example, a ratio of PH.sub.3 to H.sup.2 is 1% to 30%; an implantation energy range is 20 KeV to 110 KeV, and a preferred energy range is 50 KeV to 70 KeV, and an implantation dose range is 1×10.sup.13 atoms/cm.sup.3 to 1×10.sup.17 atoms/cm.sup.3. Preferably, the implantation dose range is 5×10.sup.14 atoms/cm.sup.3 to 5×10.sup.15 atoms/cm.sup.3.

(42) Step 170: Deposit a passivation layer 600 on the gate 500, and form through holes in the gate insulating layer 400 and the passivation layer 600. For a cross section of a structure obtained after the step is completed, refer to FIG. 2F.

(43) Specifically, a passivation layer having a thickness of 200 nm to 800 nm may be deposited by using a chemical vapor deposition process. For example, the passivation layer is oxide, nitride, or an oxygen nitrogen compound. For another example, the passivation layer is of a single-layer structure or a multi-layer structure. For another example, a gas used for forming the passivation layer is SiH.sub.4, NH.sub.3, N.sub.2, SiH.sub.4, or N.sub.2O.

(44) For example, the mask is formed by using a photoetching process and through dry etching, and the through holes are formed in the passivation layer and the gate insulating layer to expose the source region and the drain region. In the dry etching process, a gas such as SF6, CF4, CHF3, or CCl2F2 containing fluorine or chlorine, or a gas obtained by mixing the foregoing gas and O.sub.2 may be used as an etching medium, and etching is performed through reactive ion etching, plasma etching, or inductance coupling plasma etching.

(45) Step 180: Manufacture a source 710 and a drain 720. For a cross section obtained after the step is completed, refer to FIG. 2G.

(46) Specifically, a metal layer is formed on the passivation layer through sputtering, thermal evaporation, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, or electron cyclotron resonance chemical vapor deposition. On the metal layer, a photoresist mask is formed with a photoresist by using a photolithography process, and a pattern including a source and a drain is formed through wet etching or dry etching. Referring to FIG. 2G, the source 710 passes through the through holes 610 and is electrically connected to the source region 310, and the drain 720 passes through the through holes 610 and is electrically connected to the drain region 320.

(47) In this way, the thin-film transistor on the array substrate including the gate, the source, and the drain is manufactured by using the method, and the gate line, the data cable, and the pixel electrode that are on the array substrate may be obtained by using a conventional process. Based on a structure requirement of the array substrate, a display panel may be finally formed by using a conventional process, and a display device is further formed.

(48) For another example, a thin-film transistor is provided and manufactured by using the manufacturing method in any one of the foregoing embodiments.

(49) For another example, an array substrate is provided, including a substrate, and a thin-film transistor, a gate line, a data cable, and a pixel electrode that are disposed on the substrate. The thin-film transistor is manufactured by using the manufacturing method in any one of the foregoing embodiments.

(50) In this embodiment, a display device is provided, including the array substrate in any one of the foregoing embodiments. For example, the display device is a product or component having a display function. For example, the display device is a liquid crystal panel, electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, or a navigator.

(51) The technical features of the foregoing embodiments can be arbitrarily combined. In order to simplify the descriptions, all possible combinations of the technical features in the above embodiments have not been described. However, as long as there is no contradiction in the combinations of these technical features, it should be considered as the scope described in this specification.

(52) The foregoing embodiments only express several implementations of the present invention Descriptions of the foregoing embodiments are relatively specific and detailed, but cannot be understood as limiting the scope of the patent for the present invention. It should be noted that, for those of ordinary skill in the art, without departing from the concept of the present invention, modifications and improvements can be made, and all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention shall be subject to the appended claims.