A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

The present document relates to multilayered dielectric composites for high-temperature applications and related methods.

A block copolymer forms a dielectric film with isolated polarizable domains. The block copolymer is a molecule selected to have an ionically functionalized end. The ionically functionalized end is selected to be less soluble in a solvent than another portion of the polymer such that, when a plurality of the block copolymer molecules are dissolved in the solvent, the first ends of the plurality of block copolymers interact with each other and aggregate to form isolated polarizable domains. The block copolymer forms an electrically isolating shell about a core comprised of the ionically functionalized ends. One or more additives may be disposed selectively within the core to increase the dielectric constant of the dielectric film.

A dielectric film is provided. The dielectric film includes a dielectric polymer substrate having two surfaces opposite to each other and a coating layer formed on at least one of the two surfaces of the dielectric polymer substrate by chemical vapor deposition polymerization and/or irradiation polymerization. A power capacitor includes the dielectric film. A process for preparing the dielectric film is provided.

A dielectric film is provided. The dielectric film includes a dielectric polymer substrate having two surfaces opposite to each other and a coating layer formed on at least one of the two surfaces of the dielectric polymer substrate by chemical vapor deposition polymerization and/or irradiation polymerization. A power capacitor includes the dielectric film. A process for preparing the dielectric film is provided.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

The present disclosure provides advantageous composite films/coatings, and improved methods for fabricating such composite films/coatings. More particularly, the present disclosure provides improved methods for fabricating composite films by trapping at least a portion of a layered material (e.g., hexagonal boron nitride sheets/layers) at an interface of a phase separated system and then introducing the layered material to a polymer film. The present disclosure provides for the use of boron nitride layers to increase the properties (e.g., dielectric constant and breakdown voltage) of polymer films. The exemplary films can be produced by an advantageous climbing technique. Exemplary boron nitride films are composed of overlapping boron nitride sheets with a total thickness of about one nanometer, with the film then transferred onto a polymer film, thereby resulting in significant increases in both dielectric and breakdown properties of the polymer film.

A film capacitor includes a main body portion shaped in a rectangular prism, and a pair of external electrodes. The main body portion includes dielectric films and metallic films which are laminated, and includes a pair of first faces opposed to each other, a pair of first side faces opposed to each other, and a pair of second side faces opposed to each other, the pair of first side faces connecting the pair of first faces, the pair of second side faces connecting the pair of first faces. The pair of external electrodes is located on the pair of first side faces. The second side faces are covered with an insulating cover layer. The film capacitor includes a grease-containing portion between the second side face and the insulating cover layer, the grease-containing portion including an insulating grease.