A method for manufacturing a multilayer electronic component having an element body in which a functional part and a conductor part are laminated. The green multilayer body 11 is formed on the temporary holding film 62 formed on the release substrate. The green multilayer body 11 is formed by repeating the first step forming a green functional part using the first ink containing the functional particles and the second step forming the green conductor part using the second ink containing the conductive particles. The temporary holding film 62 has conductivity.

A method for manufacturing a multilayer electronic component having an element body in which a functional part and a conductor part are laminated. The green multilayer body 11 is formed on the temporary holding film 62 formed on the release substrate. The green multilayer body 11 is formed by repeating the first step forming a green functional part using the first ink containing the functional particles and the second step forming the green conductor part using the second ink containing the conductive particles. The temporary holding film 62 has conductivity.

A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

A film capacitor is disclosed. In an embodiment a film capacitor includes a film comprising a blend of polypropylene and cyclo-olefin copolymer, wherein the blend includes an amount of at least two thirds by weight of polypropylene, and wherein the cyclo-olefin copolymer includes ethylene in a range of 23 weight % to 27 weight % inclusive and norbornene in a range of 73 weight % to 77 weight % inclusive.

A wet capacitor is provided, and the use of an insulation fluid composition in such a capacitor. The capacitor includes a package of a metal foil and a polymeric insulating film, or of a metallized polymeric film, wherein the insulation composition includes a synthetic or natural aromatic oil and a polymer. The insulation composition is configured to undergo a thermo-reversible oil-to-gel transition at a predefined gel-point temperature. Further, methods of producing such wet capacitors are provided, optionally including additional filling materials, and methods of sealing leaks in such capacitors.

A capacitor is provided. The capacitor includes a first electrode layer and a second electrode layer; and a first dielectric layer and a second dielectric layer, wherein the first dielectric layer and the second dielectric layer are disposed between the first electrode layer and the second electrode layer. The first dielectric layer includes a first dielectric powder and a first organic resin, and the second dielectric layer includes a second dielectric powder and a second organic resin. In particular, the weight ratio of the first dielectric powder to the first organic resin is greater than the weight ratio of the second dielectric powder to the second organic resin.

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to a base portion of the bottom electrode layer. The bottom electrode layer includes the base portion and a plurality of protrusions, each of the protrusions is protruding from the base portion and leveled with a lower surface of the dielectric layer, each portion of the dielectric layer over the bottom electrode layer substantially have identical thicknesses.

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to a base portion of the bottom electrode layer. The bottom electrode layer includes the base portion and a plurality of protrusions, each of the protrusions is protruding from the base portion and leveled with a lower surface of the dielectric layer, each portion of the dielectric layer over the bottom electrode layer substantially have identical thicknesses.