A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.

A block copolymer forms a dielectric film with isolated polarizable domains. The block copolymer is a molecule selected to have an ionically functionalized end. The ionically functionalized end is selected to be less soluble in a solvent than another portion of the polymer such that, when a plurality of the block copolymer molecules are dissolved in the solvent, the first ends of the plurality of block copolymers interact with each other and aggregate to form isolated polarizable domains. The block copolymer forms an electrically isolating shell about a core comprised of the ionically functionalized ends. One or more additives may be disposed selectively within the core to increase the dielectric constant of the dielectric film.

Various embodiments include, for example, a noise suppression filter for a power-delivery network (PDN). In one exemplary embodiment, a capacitor device, which may be used as at least a portion of the noise suppression filter, includes a first conductive plate and a second conductive plate with a dielectric material formed between the first conductive plate and the second conductive plate. A floating conductive fill layer is formed within the dielectric material and between the first conductive plate and the second conductive plate. Other embodiments of capacitors, and methods of forming the capacitor, are disclosed.

There are provided a dielectric film which is excellent in heat resistance and is capable of improvement in breakdown field, a film capacitor and a combination type capacitor using the dielectric film, an inverter, and an electric vehicle. A film capacitor having excellent heat resistance and high breakdown field is obtained by producing a film capacitor that uses a dielectric film comprising an organic resin and a plurality of fine particles containing a metal element, an average of diameters of the fine particles falling in a range of 0.5 nm to 50 nm. Such a film capacitor and a combination type capacitor connected thereto via a bus bar are preferably used in an inverter and an electric vehicle.

A composite film having a high dielectric permittivity engineered particles dispersed in a high breakdown strength polymer material to achieve high energy density.

A composite film having a high dielectric permittivity engineered particles dispersed in a high breakdown strength polymer material to achieve high energy density.

The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a laminated capacitor dielectric layer including alternating layers of high-k dielectric material and high-energy band gap material, and a method of formation. In some embodiments, the MIM capacitor has a laminated capacitor dielectric layer disposed over a capacitor bottom metal layer. The laminated capacitor dielectric layer includes a first layer of a first dielectric material, a second layer of a second dielectric material disposed on top of the first layer, a third layer of a third dielectric material disposed on top of the second layer, and a fourth layer of a fourth dielectric material disposed on top of the third layer. The first and third dielectric materials have a differing capacitance and band gap energy as compared to the second and fourth dielectric materials. A capacitor top metal layer is disposed over the laminated capacitor dielectric layer.

The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a laminated capacitor dielectric layer including alternating layers of high-k dielectric material and high-energy band gap material, and a method of formation. In some embodiments, the MIM capacitor has a laminated capacitor dielectric layer disposed over a capacitor bottom metal layer. The laminated capacitor dielectric layer includes a first layer of a first dielectric material, a second layer of a second dielectric material disposed on top of the first layer, a third layer of a third dielectric material disposed on top of the second layer, and a fourth layer of a fourth dielectric material disposed on top of the third layer. The first and third dielectric materials have a differing capacitance and band gap energy as compared to the second and fourth dielectric materials. A capacitor top metal layer is disposed over the laminated capacitor dielectric layer.

Dielectric capacitors including dielectric compositions with high dielectric constant, low dielectric loss, and high thermal stability are disclosed. The dielectric compositions can include a dipolar polymer having a high glass transition temperature (e.g., T.sub.g>150 C.) in combination with either (i) another dipolar polymer having a high glass transition temperature (e.g., T.sub.g150 C.) in the form of a blend, or (ii) the dipolar polymer with an inorganic interfacial agent volume content less than 2 vol % in the dielectric composition.