The present disclosure relates to a dielectric composite-based power reduction device. The power reduction device of the present disclosure is a dielectric composite-based power reduction device capable of high-efficiency power reduction via parallel connection to an input power supply. The power reduction is achieved by reactive power reduction based on a capacitor bank principle, a harmonic wave reduction by inductance, and an increase in active power efficiency. Disclosed are a composite electrode structure capable of achieving all of those, and an improvement in a performance based on a development of the composite.

Provided are a semiconductor MIM capacitor device and a method for manufacturing the same. The method includes: providing a substrate, and sequentially forming a bottom electrode layer and a first dielectric layer over the substrate; performing patterning on the first dielectric layer by applying a first mask to form a through hole for the MIM-capacitor disposed in the MIM-capacitor region and through holes for the conductive-plugs disposed in the non-MIM-capacitor region; sequentially forming an interconnection metal layer and a second dielectric layer; performing a surface planarization treatment to remove parts of the interconnection metal layer and the second dielectric layer that are outside the through hole of MIM-capacitor and the conductive plugs; and forming an upper metal layer by applying a second mask on surfaces of the second dielectric layer of the through holes of MIM-capacitor and the conductive plugs.

Provided are a semiconductor MIM capacitor device and a method for manufacturing the same. The method includes: providing a substrate, and sequentially forming a bottom electrode layer and a first dielectric layer over the substrate; performing patterning on the first dielectric layer by applying a first mask to form a through hole for the MIM-capacitor disposed in the MIM-capacitor region and through holes for the conductive-plugs disposed in the non-MIM-capacitor region; sequentially forming an interconnection metal layer and a second dielectric layer; performing a surface planarization treatment to remove parts of the interconnection metal layer and the second dielectric layer that are outside the through hole of MIM-capacitor and the conductive plugs; and forming an upper metal layer by applying a second mask on surfaces of the second dielectric layer of the through holes of MIM-capacitor and the conductive plugs.

An electronic component includes an element body, a plurality of external electrodes on the element body, and an electrical insulator on the element body. Each of the plurality of external electrodes includes a conductive resin layer. The electrical insulator includes an electrical insulating portion located at least on a region between the plurality of external electrodes on a surface of the element body.

An electronic component includes an element body, a plurality of external electrodes on the element body, and an electrical insulator on the element body. Each of the plurality of external electrodes includes a conductive resin layer. The electrical insulator includes an electrical insulating portion located at least on a region between the plurality of external electrodes on a surface of the element body.

A self-healing capacitor comprises a first electrode, a second electrode, and a dielectric layer disposed between said first and second electrodes and having first surface faced the first electrode and second surface faced the second electrode. At least one of the electrodes can include metal foam. The dielectric layer can have electrically conductive channels that each has an exit point located on the first surface of the dielectric layer and another exit point located on the second surface of the dielectric layer. The electrodes can include local contact breakers each of which is located within the electrode at an interface between the dielectric layer and the electrode and opposite at least one exit point of each electrically conductive channel in the dielectric layer. The local contact breakers can prevent electric current through the conductive channels in dielectric layer.

A multilayer electronic component includes a body including dielectric layers and internal electrodes alternately disposed in a first direction, and external electrodes disposed on the body to be connected to the internal electrodes. At least one internal electrode of the internal electrodes includes a plurality of disconnected portions penetrating through a respective internal electrode. A disconnected portion of the plurality of disconnected portions includes at least one of a pore or a dielectric substance disposed to connect adjacent dielectric layers to each other. A dielectric filling ratio, defined as a ratio of an overall length of the dielectric substance to an overall length of the disconnected portion on a cross section in the third and first directions, is more than 20% to 80% or less.

A multilayer electronic component includes a body including dielectric layers and internal electrodes alternately disposed in a first direction, and external electrodes disposed on the body to be connected to the internal electrodes. At least one internal electrode of the internal electrodes includes a plurality of disconnected portions penetrating through a respective internal electrode. A disconnected portion of the plurality of disconnected portions includes at least one of a pore or a dielectric substance disposed to connect adjacent dielectric layers to each other. A dielectric filling ratio, defined as a ratio of an overall length of the dielectric substance to an overall length of the disconnected portion on a cross section in the third and first directions, is more than 20% to 80% or less.

Embodiments herein relate to systems, apparatuses, or processes directed to electrically coupled trench capacitors within a substrate. The substrate may be part of an interposer, such as a glass interposer, where the trench capacitors deliver a high capacitance density close to one or more dies that are attached to a surface of the substrate. Portions of the trench capacitor may be a thin film capacitor at a surface of the substrate. The trenches extend from a first side of the substrate toward a second side of the substrate opposite the first side. Other embodiments may be described and/or claimed.

Embodiments herein relate to systems, apparatuses, or processes directed to electrically coupled trench capacitors within a substrate. The substrate may be part of an interposer, such as a glass interposer, where the trench capacitors deliver a high capacitance density close to one or more dies that are attached to a surface of the substrate. Portions of the trench capacitor may be a thin film capacitor at a surface of the substrate. The trenches extend from a first side of the substrate toward a second side of the substrate opposite the first side. Other embodiments may be described and/or claimed.