In a width direction of a ceramic laminate, one end portion of a first internal electrode and one end portion of a second internal electrode each include metal phases of a Ni region, a Ni—O region, and a Ni—O—Mg region disposed in this order from a first internal electrode side and a second internal electrode side, respectively, to a first side surface of the ceramic laminate. The other end portion of the first internal electrode and the other end portion of the second internal electrode each include metal phases of a Ni region, a Ni—O region, and a Ni—O—Mg region disposed in this order from the first internal electrode side and the second internal electrode side, respectively, to a second side surface of the ceramic laminate.

A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.

A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.

An electronic substrate or interposer comprising nanoporous films, such as anodic aluminum oxide, containing vertically etched openings (“vias”) that are filled with a conductive material, forming a high density collection of vertically oriented vias that conduct electricity from one side of the substrate to the other.

An electronic substrate or interposer comprising nanoporous films, such as anodic aluminum oxide, containing vertically etched openings (“vias”) that are filled with a conductive material, forming a high density collection of vertically oriented vias that conduct electricity from one side of the substrate to the other.

A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC.sub.2O.sub.5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤(x/3)+1/9, and in an X-ray diffraction chart of the dielectric film, a diffraction peak intensity of a (211) plane of the complex oxide or a diffraction peak intensity of a (222) plane of the complex oxide is larger than a diffraction peak intensity of a (110) plane of the complex oxide.

A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC.sub.2O.sub.5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤(x/3)+1/9, and in an X-ray diffraction chart of the dielectric film, a diffraction peak intensity of a (211) plane of the complex oxide or a diffraction peak intensity of a (222) plane of the complex oxide is larger than a diffraction peak intensity of a (110) plane of the complex oxide.

In a multilayer ceramic capacitor, outer electrodes include base electrode layers including a conductive metal and a glass component on a ceramic multilayer body, conductive resin layers including a thermosetting resin and a metal component on the base electrode layers such that exposed portions of the base electrode layers are exposed at least at one corner on one end surface side of the ceramic multilayer body and at least at one corner on the other end surface side thereof, and plating layers on the conductive resin layers and the exposed portions of the base electrode layers. The exposed portions of the base electrode layers are in direct contact with the plating layers at least at one corner on the one end surface side of the ceramic multilayer body and at least at one corner on the other end surface side thereof.

In a multilayer ceramic capacitor, outer electrodes include base electrode layers including a conductive metal and a glass component on a ceramic multilayer body, conductive resin layers including a thermosetting resin and a metal component on the base electrode layers such that exposed portions of the base electrode layers are exposed at least at one corner on one end surface side of the ceramic multilayer body and at least at one corner on the other end surface side thereof, and plating layers on the conductive resin layers and the exposed portions of the base electrode layers. The exposed portions of the base electrode layers are in direct contact with the plating layers at least at one corner on the one end surface side of the ceramic multilayer body and at least at one corner on the other end surface side thereof.

A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu—Kα X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°.