A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

A composite electronic component includes a capacitor structure including a dielectric layer, and a first internal electrode and a second internal electrode alternately arranged in a first direction, with the dielectric layer interposed therebetween; a fuse structure including a fuse and a fuse body; a common electrode disposed between one surface of the capacitor structure in a second direction, crossing the first direction, and one surface of the fuse structure in the second direction, and connected to the first internal electrode and the fuse; a first external electrode disposed on the other surface of the fuse structure in the second direction, and connected to the fuse; and a second external electrode disposed on the other surface of the capacitor structure in the second direction, and connected to the second internal electrode.

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

A multilayer ceramic capacitor includes a ceramic body including first and second surfaces opposing each other, and third and fourth surfaces connecting the first and second surfaces, a plurality of internal electrodes disposed inside the ceramic body, exposed from the first and second surfaces, and having an end exposed from the third surface or the fourth surface, and a first side margin and a second side margin respectively disposed on the first and second surfaces, from which end portions of the plurality of internal electrodes are exposed. The first and second side margins include a base material powder of a barium titanate-based base powder and a subcomponent. The subcomponent includes terbium (Tb) as a first subcomponent including a lanthanide rare earth element, and a content ratio of the terbium (Tb) to a content of the first subcomponent (RE) excluding the terbium (Tb) satisfies 0.110≤Tb/RE≤2.333.

A method for making a glass dielectric capacitor may include providing a plurality of foil sheets, cutting each of the plurality of foil sheets with a laser beam by melting each of the plurality of foil sheets, forming a respective smooth foil edge on each of said plurality of foil sheets during the cutting, providing a plurality of glass sheets, and stacking the plurality of foil sheets in alternating layers with the plurality of glass sheets.

Certain configurations of a stable capacitor are described which comprise electrodes produced from materials comprising a selected coefficient of thermal expansion to enhance stability. The electrodes can be spaced from each other through one of more dielectric layers or portions thereof. In some instances, the electrodes comprise integral materials and do not include any thin films. The capacitors can be used, for example, in feedback circuits, radio frequency generators and other devices used with mass filters and/or mass spectrometry devices.

A method for making a glass dielectric capacitor may include providing a plurality of foil sheets, cutting each of the plurality of foil sheets with a laser beam by melting each of the plurality of foil sheets, forming a respective smooth foil edge on each of said plurality of foil sheets during the cutting, providing a plurality of glass sheets, and stacking the plurality of foil sheets in alternating layers with the plurality of glass sheets.

A dielectric includes a composite oxide. The composite oxide has composition represented by Ce.sub.xAl.sub.1-xO.sub.k and is amorphous. In the composition represented by Ce.sub.xAl.sub.1-xO.sub.k, a requirement 0.400x<0.900 is satisfied. The symbol k is a value for maintaining electroneutrality of the composite oxide.

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

The insulating member is integrated with only one of the busbars by insert molding in which one of opposing plate members in either one of the busbars is used as an insert target. The insulating member includes an insulation active portion, a reinforcing portion and a connecting portion. The insulation active portion is disposed on a back-surface side of one of the opposing plate portions and is interposed between the back-surface side and the other one of the opposing plate portions. The reinforcing portion is disposed on the front-surface side of the one of the opposing plate portions. The connecting portion serves to connect the insulation active portion and the reinforcing portion into an integral unit. In the insulating member, lower end regions of the insulation active portion, reinforcing portion and connecting portion, which are close to the capacitor element and extending from an upper-surface side to a lower-surface side of a side plate portion, are embedded in a mold resin that covers the side plate portion.