The present disclosure relates to a capacitor including a first conductive layer over which is formed a stack, comprising from the upper face of the first layer, a first electrode, a first dielectric layer, a second electrode, and a second conductive layer, the stack comprising a stair step within the second conductive layer, the second electrode, and a part of the thickness of the first dielectric layer, the stair step being filled with a second dielectric layer so that the sidewalls of the first electrode are aligned with respect to the sidewalls of the second dielectric layer.

The present invention relates to a multilayer electronic component which includes an element body where a plurality of internal electrode layers and dielectric layers are alternately laminated. Insulating layers are disposed on at least one side surface of the element body. The insulating layers contain a glass composition and a ceramic composition. The internal electrode layers contain a metal M and the ceramic composition contains an oxide of the metal M.

A method for making a glass dielectric capacitor may include providing a plurality of foil sheets, cutting each of the plurality of foil sheets with a laser beam by melting each of the plurality of foil sheets, forming a respective smooth foil edge on each of said plurality of foil sheets during the cutting, providing a plurality of glass sheets, and stacking the plurality of foil sheets in alternating layers with the plurality of glass sheets.

Embodiments disclosed herein include a core for a package substrate. In an embodiment, the core comprises a first substrate with a first surface and a second surface, a first recess into the first surface of the first substrate, a first layer in the first recess, where the first layer is electrically conductive, a second layer over the first layer, where the second layer is a dielectric layer, and a third layer over the second layer, where the third layer is electrically conductive. In an embodiment, the core further comprises a second substrate with a third surface and a fourth surface, where the third surface of the second substrate faces the first surface of the first substrate, a second recess in the third surface of the second substrate, and a fourth layer in the second recess, where the fourth layer is electrically conductive, and the fourth layer contacts the third layer.

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

A dielectric glass composition suitable for use in an electronic device which comprises a sufficient amount of silicon dioxide to impart durability to the glass composition when subject to a humid environment, and one or more alkali metal oxides, wherein (i) the total content of the alkali metal oxides is at least about 10 wt % and no more than about 35 wt %, based upon 100% total weight of the glass composition, (ii) the median particle size (d.sub.50) of the glass composition is no more than about 5 m, and (iii) the glass composition has a coefficient of thermal expansion of at least about 10 ppm/K and no more than about 25 ppm/K, is provided.

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

The present invention relates to a multilayer electronic component which includes an element body where a plurality of internal electrode layers and dielectric layers are alternately laminated. Insulating layers are disposed on at least one side surface of the element body. The insulating layers contain a glass composition and a ceramic composition. The internal electrode layers contain a metal M and the ceramic composition contains an oxide of the metal M.

Certain configurations of a stable capacitor are described which comprise electrodes produced from materials comprising a selected coefficient of thermal expansion to enhance stability. The electrodes can be spaced from each other through one of more dielectric layers or portions thereof. In some instances, the electrodes comprise integral materials and do not include any thin films. The capacitors can be used, for example, in feedback circuits, radio frequency generators and other devices used with mass filters and/or mass spectrometry devices.

LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.