Patent classifications
H01G4/1272
Power storage device
A power storage device, containing two electrodes, and a plate-like crystal structure smectite-based clay film between the electrodes.
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.
MULTILAYER ELECTRONIC COMPONENT
A multilayer electronic component includes a body including a plurality of internal electrodes and a dielectric layer disposed between the plurality of internal electrodes; and an external electrode disposed on the body and connected to the plurality of internal electrodes, wherein each of the plurality of internal electrodes includes a plurality of nickel layers, and a heterogeneous material layer provided between the plurality of nickel layers.
CAPACITOR, SEMICONDUCTOR DEVICE COMPRISING THE CAPACITOR, AND METHOD OF FABRICATING THE CAPACITOR
A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).
ELECTRONIC COMPONENT AND METHOD OF MANUFACTURING THE ELECTRONIC COMPONENT
An electronic component includes a multilayer body including a multilayer main body including end surfaces at which internal nickel electrode layers are exposed, side gap portions, external nickel layers on the end surfaces of the multilayer body, and external copper electrode layers covering the end surfaces on which the external nickel layers are provided. A nickel-based oxide and/or a silicon-based oxide are provided between the external nickel layer and the external copper electrode layer. A nickel layer and a tin layer are provided outside the external copper electrode layer. In a cross section passing through a middle of the electronic component in the width direction and extending in the length direction and the lamination direction, a relationship of about 0.2≤Tea/Tem≤about 1.1 is satisfied.
Dielectric Ceramic Composition and Multilayer Ceramic Capacitor Comprising the Same
A dielectric ceramic composition and a multilayer ceramic capacitor including the same are provided. The dielectric ceramic composition includes a BaTiO.sub.3-based base material main ingredient and an accessory ingredient, where the accessory ingredient includes dysprosium (Dy) and niobium (Nb) as first accessory ingredients. A total content of the Dy and Nb is less than or equal to 1.5 mol, based on 100 mol of Ti of the base material main ingredient, and a content of the Dy satisfies 0.7 mol<Dy<1.1 mol, based on 100 mol of Ti of the base material main ingredient.
CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICES HAVING THE SAME
A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
Multilayer ceramic capacitor
A multilayer ceramic capacitor include: a ceramic body including first and second surfaces opposing each other and third and fourth surfaces connecting the first and second surfaces; a plurality of internal electrodes disposed inside the ceramic body and exposed to the first and second surfaces, the plurality internal electrodes each having one end exposed to the third or fourth surface; and first and second side margin portions disposed on sides of the internal electrodes exposed to the first and second surfaces. A dielectric composition of the first and second side margin portions is different from a dielectric composition of the ceramic body, and a dielectric constant of the first and second side margin portions is lower than a dielectric constant of the ceramic body.
Trimmable Semiconductor-Based Capacitor
A capacitor assembly includes a primary capacitor and a secondary capacitor formed on a substrate. The primary capacitor and the secondary capacitor can be connected by a conduction line. The conduction line can be formed from a thin metal connection. The conduction line can be severed, i.e., trimmed, to finely tune a capacitance value of the capacitor assembly. The capacitor assembly can allow for tighter tolerance and wider variance of the capacitance value of the capacitor assembly. The capacitor assembly can be trimmed after installing the capacitor assembly in the circuit, thereby enabling fine tuning of the capacitance value of the capacitor assembly for applications requiring precision tunable capacitance.
MULTILAYER CERAMIC ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE SAME
A multilayer ceramic electronic device includes a multilayer chip. The multilayer chip has a capacity section and a side margin. The side margin includes boron and silicon, and includes a first section and a second section in order from the capacity section side toward outside. A boron concentration of the first section is larger than a boron concentration of the second section. A segregation degree of silicon in the second section is larger than a segregation degree of silicon in the first section.