A dielectric composition includes a main phase and a Ca—Si—P—O segregation phase. The main phase includes a main component expressed by ABO.sub.3. “A” includes at least one selected from calcium and strontium. “B” includes at least one selected from zirconium, titanium, hafnium, and manganese. The Ca—Si—P—O segregation phase includes at least calcium, silicon, and phosphorus.

A dielectric composition includes one of BaTiO.sub.3, (Ba, Ca) (Ti, Ca)O.sub.3, (Ba, Ca) (Ti, Zr)O.sub.3, Ba(Ti, Zr)O.sub.3 and (Ba,Ca) (Ti,Sn)O.sub.3, as a main component, a first subcomponent including a rare earth element, and a second subcomponent including at least one of a variable valence acceptor element and a fixed valence acceptor element. When a sum of contents of the rare earth element is defined as DT and a sum of contents of the variable valence acceptor element and the fixed valence acceptor element is defined as AT, (DT/AT)/(Ba+Ca) satisfies more than 0.5 and less than 6.0. In addition, a multilayer electronic component including the dielectric composition is provided.

A multilayer ceramic electronic component includes: a ceramic body including dielectric layers and a plurality of first and second internal electrodes disposed on the dielectric layers to face each other with each of the dielectric layers interposed therebetween; and first and second external electrodes disposed on external surfaces of the ceramic body and electrically connected to the first and second internal electrodes, wherein the dielectric layer includes a dielectric ceramic composition including a base material main component represented by z(Ba(1-x)Ca.)TiO3-(1-z)BaTi205 including a first main component represented by (Ba(1-x)Ca.)TiO3 and a second main component represented by BaTi2O5, 0.7z0.8 and 0x<0.1.

A multilayer ceramic electronic component includes: a ceramic body including dielectric layers and a plurality of first and second internal electrodes disposed on the dielectric layers to face each other with each of the dielectric layers interposed therebetween; and first and second external electrodes disposed on external surfaces of the ceramic body and electrically connected to the first and second internal electrodes, wherein the dielectric layer includes a dielectric ceramic composition including a base material main component represented by z(Ba.sub.(1-x)Ca.sub.x)TiO.sub.3-(1-z)BaTi.sub.2O.sub.5 including a first main component represented by (Ba.sub.(1-x)Ca.sub.x)TiO.sub.3 and a second main component represented by BaTi.sub.2O.sub.5, 0.7z0.8 and 0x<0.1.

The present invention includes a method of fabricating an integrated RF power condition capacitor with a capacitance greater than or equal to 1 of and less than 1 mm.sup.2, and a device made by the method.

A multi-layer ceramic electronic component includes: a ceramic body including a multi-layer unit having a side surface facing in a direction of a first axis and including internal electrodes laminated in a direction of a second axis orthogonal to the first axis and having end portions on the side surface, and a side margin including a first inner layer adjacent to the side surface and including a first region containing a glass component, a first outer layer outside of the first inner layer, and a ridge positioned at an end portion of the first outer layer in the direction of the second axis and including a second region containing a glass component at a lower concentration than a concentration of the glass component of the first region, the side margin having a dimension of 13 m or less in the direction of the first axis; and an external electrode.

A capacitor component includes a body including a dielectric layer and first and second internal electrodes, alternately disposed in a first direction, and first and second external electrodes, respectively disposed on opposite end surfaces of the body in a second direction, perpendicular to the first direction in the body. An amorphous second phase is disposed at an interface between the first and second internal electrodes and the dielectric layer, and ls/le is between 0.02 and 0.07, where ls is a total length of the amorphous second phase disposed in a boundary line between the first or second internal electrode and the dielectric layer in the second direction and le is a length of the first or second internal electrode in the second direction.

A dielectric film layer structure and a fabricating method thereof are provided. The dielectric film layer structure at least has a first capacitor electrode, a dielectric layer, and a second capacitor electrode, wherein the dielectric layer includes two materials of SiNx and SiOx. In a place where voltage drop is relatively large, the dielectric layer is mainly made of SiNx, and in a place where the voltage drop is relatively small, the dielectric layer is mainly made of SiOx, thereby changing current for charging thin film transistors, reducing influence of the voltage drop, and improving uniformity of panel voltage output.

Prismatic polymer monolithic capacitor structure that includes multiple interleaving radiation-cured polymer dielectric layers and metal layers. Method for fabrication of same. The chemical composition of polymer dielectric and the electrode resistivity parameters are chosen to maximize the capacitor self-healing properties and energy density, and to assure the stability of the capacitance and dissipation factor over the operating temperature range. The termination electrode that extends beyond the active capacitor area and beyond the polymer dielectric layers has a thickness larger than that used industrially to provide resistance to thermomechanical stress. The glass transition temperature of the polymer dielectric is specifically chosen to avoid mechanical relaxation from occurring in the operating temperature range, which prevents high moisture permeation (otherwise increasing a dissipation factor and electrode corrosion) into the structure. The geometry and shape of the capacitor are appropriately controlled to minimize losses when the capacitor is exposed to pulse and alternating currents.

A dielectric ceramic composition includes: Mg.sub.2SiO.sub.4 as main component; R-containing, Cu-containing, and B-containing compounds, and Li-containing glass, as sub-component. R is an alkaline earth metal. R-containing compound greater than or equal to 0.2 part by mass and less than or equal to 4.0 parts by mass, contained in terms of oxide, Cu-containing compound of greater than or equal to 0.5 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, and B-containing compound greater than or equal to 0.2 part by mass and less than or equal to 3.0 parts by mass, contained in terms of oxide, to 100 parts by mass of main component. Li-containing glass of greater than or equal to 2 parts by mass and less than or equal to 10 parts by mass contained to total a 100 parts by mass of main component, and sub-component excluding Li-containing glass.