A multi-layer ceramic capacitor includes a first region, a second region, a multi-layer unit, and a side margin. In the first region, crystal grains including intragranular pores are dispersed. In the second region, crystal grains including intragranular pores are not dispersed. The multi-layer unit includes ceramic layers that are laminated in a first direction and include the second region, and internal electrodes disposed between the ceramic layers. The side margin covers the multi-layer unit from a second direction orthogonal to the first direction and includes a region, the region being adjacent to the multi-layer unit and including the first region.

In a multilayer ceramic capacitor, outer electrodes include base electrode layers including a conductive metal and a glass component on a ceramic multilayer body, conductive resin layers including a thermosetting resin and a metal component on the base electrode layers such that exposed portions of the base electrode layers are exposed at least at one corner on one end surface side of the ceramic multilayer body and at least at one corner on the other end surface side thereof, and plating layers on the conductive resin layers and the exposed portions of the base electrode layers. The exposed portions of the base electrode layers are in direct contact with the plating layers at least at one corner on the one end surface side of the ceramic multilayer body and at least at one corner on the other end surface side thereof.

An electronic component includes an inner electrode inside of a main body and exposed at a surface of the main body, and an outer electrode on a surface of the main body and electrically connected to the inner electrode, wherein a plurality of recesses are provided in a surface of the outer electrode, and each of the plurality of recesses includes a portion in which a diameter of an opening of the recess gradually decreases toward an opening side of the recess.

A multi-layer ceramic capacitor includes a multi-layer unit, a side margin, and a bonding unit. The multi-layer unit includes ceramic layers and internal electrodes. The ceramic layers are made of first ceramics and laminated in a first direction, the first ceramics having a first average crystal grain diameter. The internal electrodes are disposed between the ceramic layers. The side margin is made of second ceramics and covers the multi-layer unit from a second direction orthogonal to the first direction, the second ceramics having a second average crystal grain diameter. The bonding unit is made of third ceramics and disposed between the multi-layer unit and the side margin, the third ceramics having a third average crystal grain diameter that is larger than the first average crystal grain diameter and the second average crystal grain diameter.

A multilayer ceramic capacitor includes a capacitor body including a first internal electrode laminated portion in which three or more first internal electrodes are laminated in a laminating direction, and a second internal electrode laminated portion in which three or more second internal electrodes are laminated in the laminating direction. The second internal electrode laminated portion is opposite to the first internal electrode laminated portion in the laminating direction.

A capacitor structure and a method of manufacturing the same, and a memory are provided. The method includes the following operations. A substrate is provided. A first conductive structure with a shape of column is formed on the substrate. A second conductive structure is formed on the substrate. The second conductive structure surrounds the first conductive structure and is spaced with the first conductive structure. The first conductive structure and the second conductive structure together form a bottom electrode. A capacitor dielectric layer is formed. The capacitor dielectric layer covers the surface of the substrate and the surface of the bottom electrode. A top electrode covering the surface of the capacitor dielectric layer is formed.

A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by A.sub.yBO.sub.3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≤0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of A.sub.yBO.sub.3.

A multilayer ceramic capacitor includes a stacked body and external electrodes. The stacked body includes stacked dielectric layers and internal electrodes. The external electrodes are disposed on lateral surfaces of the stacked body and are connected to the internal electrodes. A ratio of min to max is not less than about 36% and not more than about 90%, where A.sub.1, A.sub.2, A.sub.3, and A.sub.4 respectively denote the surface areas of first, second, third, and fourth external electrodes that are located on the first or second main surface of the stacked body.

A capacitor includes a first electrode including a first reinforcement material having a perovskite crystal structure; and a first metallic material having a perovskite crystal structure; a second electrode on the first electrode; and a dielectric layer between the first electrode and the second electrode, wherein the first metallic material has greater a greater electronegativity than that of the first reinforcement material.

A thin film laminate structure, an integrated device including the same, and a method of manufacturing the thin film laminate structure are provided. The thin film laminate structure includes two or more dielectric layers, wherein at least one of the dielectric layers of the thin film laminate structure includes a compound represented by Formula 1 and having a perovskite-type crystal structure having a B/B′ composition ratio different from that of a remainder of the dielectric layers:

AB.sub.1-xB′.sub.xO.sub.3  <Formula 1> wherein, in Formula 1, A, B, B′, and x are the same as defined in the specification.