A method of manufacturing a ceramic dielectric, including: heat-treating a barium precursor or a strontium precursor, a titanium precursor, and a donor element precursor to obtain a conducting or semiconducting oxide, preparing a mixture including the conducting or semiconducting oxide and a liquid-phase acceptor element precursor, and sintering the mixture to form a ceramic dielectric, wherein the ceramic dielectric includes a plurality of grains and a grain boundary between adjacent grains, and wherein the plurality of grains including an insulating oxide comprising an acceptor element derived from the acceptor element precursor.

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

According to a novel fabrication method, a new composition of matter includes a large percentage (e.g., 75% or higher percentage) of primary nanoparticles in the new composition of matter. The novel fabrication method reduces the size of nanoparticle clusters in material of the new composition of matter, allows fabrication of specific nanoparticle cluster sizes, and allows fabrication of primary nanoparticles. This new composition of matter can include a high permittivity and high resistivity dielectric compound. This new composition of matter, according to certain examples, has high permittivity, high resistivity, and low leakage current. In certain examples, the new composition of matter constitutes a dielectric energy storage device that is a battery with very high energy density, high operating voltage per cell, and an extended battery life cycle.

A multilayer electronic component includes a body including a plurality of dielectric layers and an internal electrode including a conductive material, and an external electrode disposed on the body and connected to the internal electrode. The internal electrode includes a Sn diffusion portion including Sn in a region connected to the external electrode, and a ratio of an average number of atoms of the Sn compared to an average number of atoms of the conductive material other than the Sn of the internal electrode included in the Sn diffusion portion is 3% or more and 50% or less.

A new composition of matter, and more specifically a new compound, includes two or more highly resistive materials integrated into the chemistry of the grain boundary of an internal barrier layer capacitor material. This new compound includes a high permittivity and high resistivity dielectric compound. This new compound has high permittivity, high resistivity, and low leakage current. In certain examples the new compound can be used to create a dielectric energy storage device that is a battery with very high energy density, high operating voltage per cell, and an extended battery life cycle.

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

A multilayer capacitor includes: a body including dielectric layers and first and second internal electrodes alternately disposed with respective dielectric layers interposed therebetween; and first and second external electrodes disposed on the body to be connected to the first and second internal electrodes, respectively. The dielectric layer contains BaTiO.sub.3 as a main ingredient, and includes a plurality of grains and grain boundaries formed between adjacent grains, the grain boundary containing Si in an amount of 8.0 to 18.0 wt % and Al and Mg in a total content of 2.0 to 6.0 wt %.

A new composition of matter, and more specifically a new compound, includes two or more highly resistive materials integrated into the chemistry of the grain boundary of an internal barrier layer capacitor material. This new compound includes a high permittivity and high resistivity dielectric compound. This new compound has high permittivity, high resistivity, and low leakage current. In certain examples the new compound can be used to create a dielectric energy storage device that is a battery with very high energy density, high operating voltage per cell, and an extended battery life cycle.

The present disclosure provides a method for preparing a dielectric which can provide a low-dielectric loss dielectric not variable to frequency, wherein the dielectric shows a narrow variation in dielectric characteristics depending on temperature, undergoes no change in dielectric characteristics depending on frequency and thus has a low dielectric loss. The present disclosure also provides a dielectric prepared by the method.

A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.