A laser irradiation apparatus (1) according to an embodiment includes an optical-system module (20) configured to apply laser light (L1) to an object to be irradiated, a shield plate (51) in which a slit (54) is formed, through which the laser light (L1) passes, and a reflected-light receiving component (61) disposed between the optical-system module (20) and the shield plate (51), in which the reflected-light receiving component (61) is able to receive, out of the laser light (L1), reflected light (R1) reflected by the shield plate (51).

A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

Methods for low-temperature formation of one or more thin-film semiconductor structures on a substrate that include the steps of, forming a (poly)silane layer over a substrate, transforming one or more parts of the (poly)silane layer in one or more thin-film solid-state semiconductor structures, by exposing the one or more parts with light from an

Provided is a hydrogenation annealing method using a microwave, which performs hydrogenation annealing at a low temperature and with low power in a manufacturing process of a thin film transistor (TFT) for a display device. The hydrogenation annealing method is constituted by a loading step of loading a device requiring hydrogenation annealing into a chamber and an annealing step of irradiating a microwave having a frequency in an industrial scientific medical (ISM) band into the chamber into which the device is loaded. As hydrogenation annealing is performed at a low temperature by using the microwave for an oxide semiconductor TFT or LTPS having very large electron mobility, high integrated energy is transmitted to the device by the microwave, thereby implementing recoupling of hydrogen atoms which have been performed only at a high temperature, even at a low temperature.

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

A display device manufacturing method includes annealing a display substrate by irradiating a laser to the display substrate in different energy values, measuring a transmittance of the annealed display substrate, and determining an optimal crystallization value of the display substrate based on the transmittance, wherein the determining of the optimal crystallization value includes calculating an absorbance of the display substrate for each energy value of the laser based on the transmittance, calculating a band gap energy of the annealed display substrate for each energy value of the laser based on the absorbance, and determining an energy value of the laser corresponding to a minimum value of the band gap energy as the optimal crystallization value. Also provided is a display device manufacturing apparatus that may implement the manufacturing method.

A laser irradiation device may include: a laser device configured to emit a pulse laser beam; beam scan optics configured to allocate the pulse laser beam emitted from the laser device to optical paths; beam homogenizers provided in the respective optical paths, each of the beam homogenizers being configured to homogenize distribution of light intensity of the pulse laser beam allocated to a corresponding optical path of the optical paths; and a controller configured to control the beam scan optics to allocate, for each pulse, the pulse laser beam emitted from the laser device to the corresponding optical path of the optical paths.

The present invention provides a thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device. The thin film transistor comprises a gate, a source, a drain, a gate insulation layer, an active layer, a passivation layer, a first electrode connection line and a second electrode connection line. The gate, the source and the drain are provided in the same layer and comprise the same material. The gate insulation layer is provided above the gate, the active layer is provided above the gate insulation layer, and a pattern of the gate insulation layer, a pattern of the gate and a pattern of the active layer coincide with each other. The passivation layer covers the source, the drain and the active layer, and the passivation layer has a first via hole corresponding to a position of the source, a second via hole corresponding to a position of the drain, and a third via hole and a fourth via hole corresponding to a position of the active layer provided therein. The first electrode connection line connects the source with the active layer through the first via hole and the third via hole, and the second electrode connection line connects the drain with the active layer through the second via hole and the fourth via hole.

Embodiments of the present invention provide a thin film transistor, a method for fabricating the same and an array substrate. The thin film transistor comprises a base substrate and an active region and a plurality of reflective plates formed on the base substrate, wherein the plurality of reflective plates are spaced apart from each other and provided at least at positions corresponding to the active region, the active region comprises polysilicon, and the polysilicon in the active region is formed by irradiating an amorphous silicon layer with laser emitted from a side of the amorphous silicon layer away from the reflective plates.

An organic light-emitting diode display is disclosed. In one aspect, the display includes a substrate, a scan line formed over the substrate and configured to provide a scan signal, and a data line crossing the scan line and configured to provide a data voltage. A driving voltage line crosses the scan line and is configured to provide a driving voltage. The display also includes a switching transistor electrically connected to the scan line and the data line and a driving transistor electrically connected to the switching transistor and including a driving gate electrode, a driving source electrode, and a driving drain electrode. The display further includes a storage capacitor including a first storage electrode formed over the driving transistor and the driving gate electrode as a second storage electrode. The second storage electrode overlaps the first storage electrode in the depth dimension and extends from the driving voltage line.