Patent classifications
H01L2224/32221
THERMAL BYPASS FOR STACKED DIES
The disclosed technology relates to microelectronic devices that can dissipate heat efficiently. In some aspects, such a microelectronic device includes a first semiconductor element and at least one second semiconductor element disposed on the first semiconductor element. Such a microelectronic device may further include a thermal block disposed on the first semiconductor element and adjacent to the at least one second semiconductor element. The thermal block may include a conductive thermal pathway to transfer heat from the first semiconductor element to a heat sink disposed on the thermal block. In some embodiments, a coefficient of thermal expansion (CTE) of the thermal block is less than 10 μm/m° C. In some embodiments, a thermal conductivity of the thermal block is higher than 150 Wm-1K-1. at room temperature.
Electronic Package and Electronic Device Comprising the Same
Example embodiments relate to electronic packages and electronic devices that include the same. One embodiment includes an electronic package. The electronic package includes a package body. The electronic package also includes a heat-conducting substrate arranged inside the package body and having a bottom surface that is exposed to an outside of the package body. Additionally, the electronic package includes an electronic circuit arranged inside the package body and including a semiconductor die that has a bottom surface with which it is mounted to the heat-conducting substrate and an opposing upper surface. Further, the electronic package includes one or more leads partially extending from outside the package body to inside the package body and over the minimum bounding box, each lead having a first end that is arranged inside the package body. In addition, the electronic package includes one or more bondwires for connecting the first end(s) to the electronic circuit.
MICRO DEVICE ARRANGEMENT IN DONOR SUBSTRATE
This disclosure is related to arranging micro devices in the donor substrate by either patterning or population so that there is no interfering with unwanted pads and the non-interfering area in the donor substrate is maximized. This enables to transfer the devices to receiver substrate with fewer steps.
DISPLAY PANEL, PREPARATION METHOD THEREOF, AND DISPLAY DEVICE
Provided are a display panel, a preparation method thereof, and a display device. The display panel includes a plurality of sub-panels. Each sub-panel includes first substrate, second substrate, bezel adhesive located therebetween, a plurality of bank structures, and a plurality of light-emitting elements. At least one light-emitting element forms a pixel unit. Each bank structure is located between adjacent pixel units. Seaming adhesive is located between adjacent sub-panels. The sub-panels share a same first substrate, and the seaming adhesive is disposed on the same first substrate. The first substrate includes a display region and a non-display region surrounding the display region. The light-emitting elements and the bank structures are located in the display region, and the bezel adhesive is located in the non-display region. In this manner, splicing gaps between adjacent sub-panels can be effectively reduced, and thus the display effect of the display panel can be improved.
ELECTRONIC DEVICE
An electronic device includes a heat dissipation member, a power element that is thermally coupled to the heat dissipation member, and a first conductive layer to which the power element is electrically coupled. The electronic device further includes a control element that controls a switching operation of the power element, a second conductive layer to which the control element is electrically coupled, and a resin layer arranged between the first conductive layer and the second conductive layer. The power element is embedded in the resin layer. The first conductive layer, the resin layer, and the second conductive layer are stacked on the heat dissipation member in this order from the ones closer to the heat dissipation member.
METHOD FOR CONNECTING COMPONENTS BY PRESSURE SINTERING
A method for connecting components involves providing an arrangement of at least two components each containing at least one metallic contact surface and a metallic sintering agent in the form of a metallic solid body having metal oxide surfaces arranged between the components and pressuring sintering the arrangement whereby metal oxide surfaces of the metallic sintering agent and the metallic contact surfaces of the components each form a joint contact surface. The pressure sintering is carried out in an atmosphere containing at least one oxidizable compound and/or the metal oxide surfaces are provided with at least one oxidizable organic compound before formation of the corresponding joint contact surface.
ELECTRONIC DEVICE
An electronic device includes a substrate, a plurality of micro semiconductor structure, a plurality of conductive members, and a non-conductive portion. The substrate has a first surface and a second surface opposite to each other. The micro semiconductor structures are distributed on the first surface of the substrate. The conductive members electrically connect the micro semiconductor structures to the substrate. Each conductive member is defined by an electrode of one of the micro semiconductor structures and a corresponding conductive pad on the substrate. The non-conductive portion is arranged on the first surface of the substrate. The non-conductive portion includes one or more non-conductive members, and the one or more non-conductive members are attached to the corresponding one or more conductive members of the one or more micro conductive structures.
Seamless Interconnect Thresholds using Dielectric Fluid Channels
A method may include forming a cavity within a plastic structure with a channel positioned at a perimeter of the cavity, inserting the electronic component into the cavity, dispensing a dielectric fluid into the channel at the perimeter of the cavity, curing the dielectric fluid in situ to secure the electronic component within the cavity with a cured dielectric and printing interconnects for the electronic component.
Micro device arrangement in donor substrate
This disclosure is related to arranging micro devices in the donor substrate by either patterning or population so that there is no interfering with unwanted pads and the non-interfering area in the donor substrate is maximized. This enables to transfer the devices to receiver substrate with fewer steps.
SEMICONDUCTOR PACKAGE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE
In a semiconductor package in which a semiconductor element is connected to a substrate, the semiconductor element is prevented from being warped. The semiconductor package includes a substrate, the semiconductor element, a bonding portion, and protrusions. First ends of wires are connected to a front surface of the substrate. Second ends of wires are connected to one surface of opposite surfaces of the semiconductor element. The bonding portion bonds a part of the other surface of the opposite surfaces of the semiconductor element and the front surface of the substrate. The protrusions protrude from the front surface of the substrate to a remaining part of the other surface of the opposite surfaces of the semiconductor element.