A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr.sub.1.00stBa.sub.sCa.sub.t).sub.6.00xR.sub.x(Ti.sub.1.00aZr.sub.a).sub.x+2.00(Nb.sub.1.00bTa.sub.b).sub.8.00xO.sub.30.00 in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50s1.00, 0t0.50, 0.50s+t1.00, 0.50<x1.50, 0.30a1.00, and 0b1.00. At least one or more elements selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.

A trench capacitor manufacturing method is provided. The method includes forming a deep trench in a wafer, forming a trench capacitor structure including a plurality of dielectric films and a plurality of conductive layers in the deep trench; determining if the wafer has a tensile stress based on the forming of the trench capacitor structure; performing a high temperature heat treatment to the trench capacitor structure to change a form of the wafer to a direction that offsets the tensile stress; forming an inter-layer insulating film on the trench capacitor structure; and forming a metal interconnect on the inter-layer insulating film.

A multilayer ceramic electronic component includes: a body part including dielectric layers and internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and external electrodes disposed on an outer surface of the body part and electrically connected to the internal electrodes. The dielectric layer includes grains including: a semiconductive or conductive grain core region containing a base material represented by ABO.sub.3, where A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf, and a doping material including a rare earth element; and an insulating grain shell region enclosing the grain core region.

A method can be used for producing a fully active stack. A stack has the sides A, B, C and D running along the stacking direction. The method includes combining and temporarily making contact with the internal electrodes that make contact with the respective side on one of the sides B or D, such that the internal electrodes that make contact with the respective side can be electrically driven selectively. The electrically driven internal electrodes are electrochemically coated on the sides A and C. The stack is singulated to form a fully active stack with the electrochemically coated internal electrodes on the sides A and C. A method for producing a multilayer component comprising the fully active stack and a fully active multilayer component producible according to the method are furthermore proposed.

A trench capacitor manufacturing method is provided. The method includes forming a deep trench in a wafer, forming a trench capacitor structure including a plurality of dielectric films and a plurality of conductive layers in the deep trench; determining if the wafer has a tensile stress based on the forming of the trench capacitor structure; performing a high temperature heat treatment to the trench capacitor structure to change a form of the wafer to a direction that offsets the tensile stress; forming an inter-layer insulating film on the trench capacitor structure; and forming a metal interconnect on the inter-layer insulating film.

A dielectric composition comprising a main component expressed by a chemical formula of (A.sub.6-xB.sub.xC.sub.x+2D.sub.8-xO.sub.30, 0x5), wherein said A component is at least one element selected form the group consisting of Ba, Ca, and Sr, said B component is at least one element selected from the group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, said C component is at least one element selected from the group consisting of Ti, and Zr, said D component is at least one element selected from the group consisting of Nb, and Ta, and said dielectric composition comprises 2.50 mol or more and 20.00 mol or less of an oxide of Ge as a first sub component with respect to 100 mol of said main component.

A capacitor includes a pair of electrodes and a metalized dielectric layer disposed between the pair of electrodes, in which the metalized dielectric layer has a plurality of metal aggregates distributed within a dielectric material. The distribution is such that a volume fraction of metal in the metalized dielectric layer is at least about 30%. Meanwhile, the plurality of metal aggregates are separated from one another by the dielectric material. A method for forming a metal-dielectric composite may include coating a plurality of dielectric particles with a metal to form a plurality of metal-coated dielectric particles and sintering the plurality of metal-coated dielectric particles at a temperature of at least about 750 C. to about 950 C. to transform the metal coatings into discrete, separated metal aggregates. Contrary to conventional techniques of separating electrodes by a dielectric tape, this inventive system and method demonstrates that a metalized dielectric layer may be formed in-situ during sintering.

A multilayer ceramic capacitor includes: a multilayer chip in which each of dielectric layers and each of internal electrode layers are alternately stacked and are alternately exposed to two edge faces thereof; and external electrodes formed on the two edge faces; wherein: the external electrodes have a structure in which a plated layer is formed on a ground layer whose main component is a metal or an alloy, a thermal expansion coefficient of the metal being larger than that of a main ceramic component of the dielectric layer, the ground layer including a ceramic additive; outermost layers of the multilayer chip are cover layers whose main component is a main component of the dielectric layer; and thermal expansion coefficients satisfy a relationship of, the main component of the ground layer>the main component of the cover layers>the ceramic additive.

A trench capacitor manufacturing method is provided. The method includes forming a deep trench in a wafer, forming a trench capacitor structure including a plurality of dielectric films and a plurality of conductive layers in the deep trench; determining if the wafer has a tensile stress based on the forming of the trench capacitor structure; performing a high temperature heat treatment to the trench capacitor structure to change a form of the wafer to a direction that offsets the tensile stress; forming an inter-layer insulating film on the trench capacitor structure; and forming a metal interconnect on the inter-layer insulating film.

In order to provide a dielectric composition having high relative permittivity at a wide range of temperatures, the main component of a dielectric composition includes strontium and tantalum.