In one embodiment, methods for making semiconductor devices are disclosed.

A method for forming a packaged semiconductor device includes attaching a first major surface of a semiconductor die to a plurality of protrusions extending from a package substrate. A top surface of each protrusion has a die attach material, and the plurality of protrusions define an open region between the first major surface of the semiconductor die and the package substrate. Interconnects are formed between a second major surface of the semiconductor die and the package substrate in which the second major surface opposite the first major surface. An encapsulant material is formed over the semiconductor die and the interconnects.

According to one embodiment, A semiconductor apparatus includes: a pellet including a first surface on which a plurality of pads are provided; a first bonding material provided on the first surface; and a first metal plate provided on the first bonding material, electrically connected to the plurality of pads, and including a second surface facing the first surface and a plurality of protrusions provided on the second surface, wherein the plurality of protrusions respectively face one pad of the plurality of pads disposed at an end and another pad of the plurality of pads disposed at the other end in a direction in which the plurality of pads are aligned.

A first region of a die pad of a semiconductor device includes: a third region having a surface facing a surface of a semiconductor chip via a die bond material; and a fourth region having a surface facing the surface of the semiconductor chip via a sealing body without interposing the die bond material between the die pad and the semiconductor chip. The die pad includes a convex portion provided in the third region and protruding from a flat surface including an upper surface of the die pad toward the semiconductor chip. The sealing body includes a plurality of filler particles. A part of the plurality of filler particles is interposed between the surface of the semiconductor chip and the upper surface, which is located in the fourth region, of the die pad.

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes an electronic unit, an encapsulation layer, a circuit structure, a protective layer, a first heat conducting element, and a second heat conducting element. The encapsulation layer surrounds the electronic unit and has a first side and a second side opposite to each other. The circuit structure is disposed on the first side of the encapsulation layer and electronically connected to the electronic unit. The protective layer is disposed on the second side of the encapsulation layer. The first heat conducting element is disposed on the protective layer. The second heat conducting element is disposed on the first heat conducting element. A thermal conductivity of the second heat conducting element is different from a thermal conductivity of the first heat conducting element.