A display substrate, a method for manufacturing the same and a display device are provided. The method includes steps of forming a common electrode line, a semiconductor pattern, and a data line on a base substrate, so that the semiconductor pattern is located between the common electrode line and the data line; and irradiating the semiconductor pattern by using light in a predetermined wavelength range from a side of the base substrate distal to the semiconductor pattern, to generate a dangling-bond defect state in a band gap of the semiconductor pattern.

A liquid crystal display panel includes: thin film transistors provided in corresponding one of pixels and including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer; a scanning line formed in a layer identical to that of the gate electrode and electrically connected to the gate electrode; and a first light shielding body formed in a layer identical to that of at least one of the source electrode and the drain electrode. The semiconductor layer is formed above the scanning line with an insulating layer interposed between the semiconductor layer and the scanning line, the first light shielding body is located above the scanning line and beside the semiconductor layer, and the first light shielding body and the scanning line are connected to each other through a contact hole made in the insulating layer.

A transistor and a method for manufacturing the same, a display substrate, and a display apparatus are provided. The transistor may include: a substrate; an active region on the substrate and including a polycrystalline silicon region; an etch stop layer at a side of the polycrystalline silicon region distal to the substrate; and a first heavily doped amorphous silicon region and a second heavily doped amorphous silicon region both at a side of the etch stop layer distal to the substrate; the polycrystalline silicon region having a first side surface corresponding to the first heavily doped amorphous silicon region and a second side surface corresponding to the second heavily doped amorphous silicon region; wherein an orthographic projection of the polycrystalline silicon region on a plane in which a lower surface of the etch stop layer lies does not go beyond the lower surface of the etch stop layer.

This organic-EL display apparatus comprises an organic-EL display panel including: a substrate that is provided with pixel drive circuits to drive respective pixels arranged in a matrix along each of a first direction and a second direction, and organic light-emitting elements being provided to each of the pixels and connected to any one of the pixel drive circuits. The organic-EL display panel comprises a signal output circuit to supply a signal to each of the pixel drive circuits arranged in a line along the first direction or the second direction. The signal output circuit includes thin film transistors and is formed around a display region on a surface of the substrate. The thin film transistors include a semiconductor layer including a region to be a channel between a source electrode and a drain electrode. The semiconductor layer is formed of amorphous silicon.

A display device includes a substrate, an electrostatic protecting component and a shielding layer. The substrate has a display region and a peripheral region located outside the display region. The electrostatic protecting component is disposed on the substrate in the peripheral region, and the electrostatic protecting component includes a semiconductor layer. The shielding layer is disposed on the substrate in the peripheral region, wherein the shielding layer overlaps the semiconductor layer.

The present invention discloses a thin film transistor and manufacturing method thereof, comprising in sequence a substrate, a gate, a gate insulation layer, an active layer, a contact layer and a source/drain, wherein, the gate comprises a metal barrier layer and a conductive layer, the metal barrier layer is a molybdenum alloy layer, the molybdenum alloy layer comprises a Mo and two other metal elements.

Provided is a thin film transistor, including: a base that includes, on an upper surface, a first region and a second region; a gate electrode that is provided on the first region of the base; a gate insulating film that is provided on a surface of the gate electrode and the second region of the base; and a semiconductor layer that is provided on a surface of the gate insulating film, wherein the semiconductor layer includes a third region and a fourth region, in the third region, the semiconductor layer and the gate electrode face with a minimum interval, in the fourth region, a distance from the semiconductor layer to the gate electrode is larger than the minimum interval, and at a boundary position between the third region and the fourth region, the semiconductor layer forms a linear shape or a substantially linear shape.

A thin film transistor, an array substrate, a display device and a method for manufacturing a thin film transistor are provided. The thin film transistor is formed on a base substrate and includes a source; a drain; and a semiconductor active layer having an amorphous silicon layer and one polysilicon portion or a plurality of polysilicon portions, the amorphous silicon layer being contacted with the one polysilicon portion or the plurality of polysilicon portions. The method includes a process of forming a source, a drain, and a semiconductor active layer: wherein forming a semiconductor active layer comprises: forming a first amorphous silicon thin film on a base substrate; and performing a crystallization treatment to the first amorphous silicon thin film to convert a part of the amorphous silicon in the first amorphous silicon thin film into polysilicon, such that a semiconductor active layer comprising one polysilicon portion or a plurality of polysilicon portions are formed.

A liquid crystal display device according to FFS technology is provided, which sufficiently provides a common electrode with common electric potential and improves an aperture ratio of pixels. A pixel electrode is formed of a first layer transparent electrode. A common electrode made of a second layer transparent electrode is formed above the pixel electrode interposing an insulation film between them. The common electrode in an upper layer is provided with a plurality of slits. The common electrode extends over all the pixels in a display region. An end of the common electrode is disposed on a periphery of the display region and connected with a peripheral common electric potential line that provides a common electric potential Vcom. There is provided neither an auxiliary common electrode line nor a pad electrode, both of which are provided in a liquid crystal display device according to a conventional art.

It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.