This organic-EL display apparatus comprises an organic-EL display panel including: a substrate that is provided with pixel drive circuits to drive respective pixels arranged in a matrix along each of a first direction and a second direction, and organic light-emitting elements being provided to each of the pixels and connected to any one of the pixel drive circuits. The organic-EL display panel comprises a signal output circuit to supply a signal to each of the pixel drive circuits arranged in a line along the first direction or the second direction. The signal output circuit includes thin film transistors and is formed around a display region on a surface of the substrate. The thin film transistors include a semiconductor layer including a region to be a channel between a source electrode and a drain electrode. The semiconductor layer is formed of amorphous silicon.

An array substrate and a display panel; the array substrate includes a substrate (6), a gate elelctrode (2), a gate insulation layer (1), a semiconductor active layer, a first etching barrier layer (4), and a source-drain layer (5); the gate elelctrode (2) is disposed at the substrate (6); and the gate insulation layer (1) covers the gate elelctrode (2).

To provide a transistor with favorable electrical characteristics, a transistor with stable electrical characteristics, or a highly integrated semiconductor device. By covering a side surface of an oxide semiconductor layer in which a channel is formed with an oxide semiconductor layer, diffusion of impurities into the inside from the side surface of the oxide semiconductor layer is prevented. By forming a gate electrode in a damascene process, miniaturization and high density of a transistor are achieved. By providing a protective layer covering a gate electrode over the gate electrode, the reliability of the transistor is increased.

In an example, a display device comprises a substrate with pixels arranged in a display portion, a signal line control circuit connected to signal lines, a plurality of thin film transistors inputting a pixel signal to a corresponding one of the pixels from the corresponding one of the signal lines, a common electrode overlapping the entire display portion, an insulating film disposed on the common electrode, a common line connected to the common electrode through contact holes in the insulating film, where the common line is disposed between the substrate and the insulating film, and outside the display portion along four sides of the display portion, a plurality of gate lines electrically connected to the thin film transistors, and a gate line control circuit connected to and configured to provide a gate signal to each of the gate lines, and disposed between the display portion and the common line.

An array substrate and a display panel; the array substrate includes a substrate (6), a gate elelctrode (2), a gate insulation layer (1), a semiconductor active layer, a first etching barrier layer (4), and a source-drain layer (5); the gate elelctrode (2) is disposed at the substrate (6); and the gate insulation layer (1) covers the gate elelctrode (2).

A semiconductor device includes a substrate, a semiconductor layer positioned above the substrate, and a blocking structure positioned between the substrate and the semiconductor layer. A dimension of the blocking structure is greater than a dimension of the semiconductor layer. The blocking structure may suppress diffusion of impurities from layers below the blocking structure.

A load, a transistor which controls a current value supplied to the load, a capacitor, a power supply line, and first to third switches are provided. After a threshold voltage of the transistor is held by the capacitor, a potential in accordance with a video signal is inputted and a voltage that is the sum of the threshold voltage and the potential is held. Accordingly, variation in current value caused by variation in threshold voltage of the transistor can be suppressed. Therefore, a desired current can be supplied to a load such as a light emitting element. In addition, a display device with a high duty ratio can be provided by changing a potential of the power supply line.

Embodiments of the present disclosure provide a thin-film transistor (TFT) panel structured to prevent the deterioration of image quality due to the luminance change of backlight. According to an embodiment, the TFT panel includes: an insulating substrate; a first gate line and a first data line which are formed on the insulating substrate to be insulated from each other and cross each other; a first subpixel electrode which is formed on the insulating substrate and connected to the first gate line and the first data line by a first TFT; a second subpixel electrode which is formed on the insulating substrate and separated from the first subpixel electrode; a connecting electrode which is directly connected to any one of the first and second subpixel electrodes and capacitively coupled to the other one of the first and second subpixel electrodes; a semiconductor pattern which is formed between the connecting electrode and the insulating substrate; and a light-shielding pattern which is formed between the semiconductor pattern and the insulating substrate, is overlapped by the connecting electrode, and blocks light.

Embodiments herein describe techniques for a semiconductor device, which may include a substrate, a metallic encapsulation layer above the substrate, and a gate electrode above the substrate and next to the metallic encapsulation layer. A channel layer may be above the metallic encapsulation layer and the gate electrode, where the channel layer may include a source area and a drain area. In addition, a source electrode may be coupled to the source area, and a drain electrode may be coupled to the drain area. Other embodiments may be described and/or claimed.

A photosensitive sensor and a method of manufacturing the photosensitive sensor are disclosed. The photosensitive sensor includes a thin film transistor and a photosensitive element on a substrate, wherein the photosensitive element includes a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode. The second electrode is connected to a drain electrode of the thin film transistor. An orthographic projection of an active layer of the thin film transistor on the substrate is within an orthographic projection of the second electrode on the substrate. The second electrode includes at least two stacked conductive layers, at least one of the at least two stacked conductive layers being a light shielding metal layer.