A driver system controls a plurality of light emitting diodes (LEDs). The driver system includes a first driver to provide an LED current to each of the plurality of LEDs. The first driver includes a current mirror for the LED current provided to the plurality of LEDs. The driver system also includes a second driver to modulate the LED current provided to the plurality of LEDs.

It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

Disclosed transistor structures include a gate electrode, an active layer, a gate dielectric layer separating the active layer from the gate electrode, a source electrode, a drain electrode, and a hydrogen-rich material layer separating the source electrode and the drain electrode from the active layer. The presence of hydrogen in the hydrogen-rich material layer may act to reduce contact resistances and Schottky barriers between the source electrode and the active layer, and between the drain electrode and the active layer, thus leading to improved device performance. The disclosed transistor structures may be formed in a BEOL process and may be incorporated with other BEOL circuit components. As such, the disclosed transistor structures may include materials that may be processed at low temperatures and thus, may not damage previously fabricated devices.

An array substrate and a display panel; the array substrate includes a substrate (6), a gate electrode (2), a gate insulation layer (1), a semiconductor active layer, a first etching barrier layer (4), and a source-drain layer (5); the gate electrode (2) is disposed at the substrate (6); and the gate insulation layer (1) covers the gate electrode (2).

The present disclosure relates to an array substrate and a method for manufacturing the array substrate. The array substrate includes a substrate having a display region and a peripheral region surrounding the display region, the display region including sub-pixels arranged in an array, and a plurality of thin film transistors located on the substrate, including a plurality of first thin film transistors located within the peripheral region and a second thin film transistor located within each sub-pixel of the display region, wherein there is a first distance in a row and/or column direction between first active layers of the first thin film transistors and second active layers of nearest neighbor second thin film transistors, and there is a second distance in a row and/or column direction between adjacent second active layers, wherein the first distance is substantially equal to the second distance.

It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

A driving substrate is provided. The driving substrate includes a substrate and a thin film transistor disposed on the substrate. The thin film transistor includes a first metal layer, a second metal layer, and a semiconductor disposed between the first metal layer and the second metal layer. The thin film transistor is divided into a first active block and a second active block, the first active block and the second active block are separated by a first gap in a first direction, and the first active block and the second active block are connected by a first bridge.

Provided is a thin film transistor, including: a base that includes, on an upper surface, a first region and a second region; a gate electrode that is provided on the first region of the base; a gate insulating film that is provided on a surface of the gate electrode and the second region of the base; and a semiconductor layer that is provided on a surface of the gate insulating film, wherein the semiconductor layer includes a third region and a fourth region, in the third region, the semiconductor layer and the gate electrode face with a minimum interval, in the fourth region, a distance from the semiconductor layer to the gate electrode is larger than the minimum interval, and at a boundary position between the third region and the fourth region, the semiconductor layer forms a linear shape or a substantially linear shape.

An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.

According to one embodiment, a display device includes a display panel and a drive circuit. A transistor provided in a pixel portion or a peripheral portion of the display panel includes a semiconductor layer having a first end and a second end, first and second gate electrodes overlapping the semiconductor layer, a source electrode connected to the first end, and a drain electrode connected to the second end. The first and second gate electrodes are disposed in a first layer. The source electrode and the drain electrode are disposed in a second layer. The source electrode is formed to cover at least a first channel region in planar view. The drain electrode is formed to cover at least a second channel region in planar view.