A single photon avalanche diode (SPAD) has a cathode coupled to a high voltage supply and an anode coupled to a first node. A photodetection circuit includes: a first n-channel transistor having a drain coupled to the first node, a source coupled to ground, and a gate coupled to a third node; a second n-channel transistor having a drain coupled to the first node, a source coupled to ground, and a gate coupled to a second node; and an inverter having an input coupled to the first node and an output coupled to an intermediate node. A current starved inverter has an input coupled to the intermediate node and an output coupled to the second node, a logic gate has inputs coupled to the intermediate node and the second node, and an output coupled to the third node.

Light detection systems are provided. Aspects of the light detection systems include first and second light receivers in fixed positions relative to each other, a plurality of wavelength separators configured to pass light from the first and second light receivers having a predetermined spectral range, and a plurality of light detection modules. Baseplates having a stage for mounting a light receiver, a plurality of recesses for fixing a plurality of light detection modules in rigid alignment relative to the stage, and a heat dissipation opening positioned within each recess are also provided. In addition, particle analysis systems, methods and kits for practicing the invention are disclosed.

According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

A photoelectric conversion apparatus includes a waveform shaping circuit, a reference circuit, and a counter. The waveform shaping circuit is configured to generate a first pulse signal based on a signal output from an avalanche diode. The reference circuit is configured to generate a second pulse signal without depending on incident light. The counter is connected to the waveform shaping circuit and the reference circuit to count a number of occurrences of a pulse signal. The pulse signal is based on at least one of the first pulse signal and the second pulse signal, and is input to the counter.

A light sensing module including a photodiode array substrate, a distance increasing layer, and a light converging element array is provided. The photodiode array substrate includes a plurality of light sensing units arranged in an array and a circuit region. The circuit region is disposed on the periphery of the light sensing units. Each of the light sensing units includes a plurality of adjacent photodiodes arranged in an array. The distance increasing layer is disposed on the photodiode array substrate. The light converging element array is disposed on the distance increasing layer, and includes a plurality of light converging units arranged in an array. Reflected light from an outside is converged by the light converging elements on the light sensing units, respectively.

An optical sensing apparatus is provided. A bias-voltage generating circuit provides a first bias voltage and a second bias voltage to a photo-sensing diode when the optical sensing apparatus is respectively in a first mode and a second mode, such that the photo-sensing diode provides a time-of-flight ranging signal in the first mode and an ambient-light sensing signal in the second mode. A quenching circuit provides the time-of-flight ranging signal to a ranging signal processing circuit in the first mode, quenches the photo-sensing diode, and provides the ambient-light sensing signal to a light-sensing signal processing circuit in the second mode.

There is provided a photodetection circuit capable of improving distance measuring performance.

The photodetection circuit according to an embodiment of the present disclosure includes: an avalanche photodiode; a charging circuit that supplies a voltage to the avalanche photodiode; an input amplifier including a comparison circuit in which a voltage level of an output terminal changes according to a comparison result between a voltage of an input terminal connected to the avalanche photodiode and a reference voltage, and a voltage control circuit that changes a potential of the reference voltage; and a state detecting circuit that sets timing for causing the voltage control circuit to change the potential of the reference voltage on the basis of a detection result of the voltage level.

A beam generating device includes a semiconductor substrate, having an optical passband. A first array of vertical-cavity surface-emitting lasers (VCSELs) is formed on a first face of the semiconductor substrate and are configured to emit respective laser beams through the substrate at a wavelength within the passband. A second array of microlenses is formed on a second face of the semiconductor substrate in respective alignment with the VCSELs so as to transmit the laser beams generated by the VCSELs. The VCSELs are configured to be driven to emit the laser beams in predefined groups in order to change a characteristic of the laser beams.

A light sensor includes an integrated circuit chip and a boost DC/DC converter. The integrated circuit chip supports an array of pixels, each pixel including a SPAD. The boost DC/DC converter delivers to the SPADs a bias potential capable of placing the SPADs in Geiger mode. The boost DC/DC converter includes an inductive element, a first switch, a second switch, and a circuit for controlling on/off switching of the first switch. The inductive element and the first and second switches are arranged outside of the integrated circuit chip while the control circuit forms part of the integrated circuit chip.

Techniques described herein provide memory redundancy. For example, the memory block for each pixel can be partitioned into multiple memory bins, and the number of memory bins can be larger than the number of time bins. Once a faulty memory cell is identified, an address associated with the memory bin that has the faulty memory cell can be skipped by an address generator. As such, the faulty memory cell is not used to store time-of-fight (ToF) information.