A testing probe system includes probes configured to contact shared probe pads of multi-channel die of a wafer; and a controller configured to generate testing patterns and receive signals from the multi-channel die of the wafer. The controller is configured to contact a probe of the probes with a shared probe pad of the multi-channel die, select a first channel of the multi-channel die to test, select at least one test mode for testing the first channel, stimulate at least the first channel during a single contact period, acquiring a first output of the first channel during the single contact period, select a second channel of the multi-channel die to test, select at least one test mode for testing the second channel, stimulate at least the second channel during the single contact period, and acquire a second output of the first channel during the single contact period.

A method of identifying defects in an electronic assembly, comprising, by a processing unit, obtaining a grid of nodes representative of a location of electronic units of an electronic assembly, wherein each node is neighboured by at most eight oiler nodes, wherein a first plurality of nodes represents failed electronic units according to at least one test criterion, and a second plurality of nodes represents passing electronic units according to the least one first test criterion, based on the grid, determining at least one first and second straight lines, and attempting to connect the first and second straight lines into a new line, wherein if at least one node from the new line belongs to the second plurality of nodes, concluding that an electronic unit represented by the node on the grid is a failed electronic unit, thereby facilitating identification of a failed electronic unit on the substrate.

A testkey includes two switching circuits and two compensation circuits. The first switching circuit transmits a test signal to a first DUT when the first DUT is being tested and functions as high impedance when the first DUT is not being tested. The second switching circuit transmits the test signal to a second DUT when the second DUT is being tested and functions as high impedance when the second DUT is not being tested. When the first DUT is not being tested and the second DUT is being tested, the first compensation circuit provides first compensation current for reducing the leakage current of the first switching circuit. When the first DUT is being tested and the second DUT is not being tested, the second compensation circuit provides second compensation current for reducing the leakage current of the second switching circuit.

A semiconductor wafer includes a semiconductor chip that includes a photonic device. The semiconductor chip includes an optical fiber attachment region in which an optical fiber alignment structure is to be fabricated. The optical fiber alignment structure is not yet fabricated in the optical fiber attachment region. The semiconductor chip includes an in-plane fiber-to-chip optical coupler positioned at an edge of the optical fiber attachment region. The in-plane fiber-to-chip optical coupler is optically connected to the photonic device. A sacrificial optical structure is optically coupled to the in-plane fiber-to-chip optical coupler. The sacrificial optical structure includes an out-of-plane optical coupler configured to receive input light from a light source external to the semiconductor chip. At least a portion of the sacrificial optical structure extends through the optical fiber attachment region.

An integrated circuit includes a semiconductor die having conductive pads and an electronic component with a first terminal coupled to a third conductive pad and a second terminal coupled to a fourth conductive pad. A resistor has a first terminal coupled to the fourth conductive pad and a second terminal coupled to the fifth conductive pad, and a first transistor has a first terminal coupled to the first conductive pad, a second terminal coupled to the fifth conductive pad, and a control terminal. A second transistor has a first terminal coupled to the first transistor, a second terminal coupled to the third conductive pad, and a control terminal. A pulse generator has an input coupled to the second conductive pad and an output coupled to the control terminal of the second transistor.

An apparatus has a semiconductor wafer hosting rows and columns of chips, where the rows and columns of chips are separated by scribe lines. Voltage regulators are positioned within the scribe lines. Each voltage regulator is connected to one or more chips. Selection circuitry is positioned within the scribe lines. The selection circuitry governs access to a chip being tested.

An apparatus has a semiconductor wafer hosting rows and columns of chips, where the rows and columns of chips are separated by scribe lines. Vertical and horizontal routing lines are in the scribe lines interconnecting the rows and columns of chips. Test circuit sites are in the scribe lines, each test circuit site including contact pads for simultaneous connection to probe card needles, sensor circuit select and control circuitry, and a sensor circuit bank.

An apparatus has a collection of ring oscillators. An instruction register block is configured to sequentially address and activate each ring oscillator in the collection of ring oscillators. A multiplexer with input lines is connected to each ring oscillator in the collection of ring oscillators and an output line. A pulse counter is connected to the output line of the multiplexer to count the number of oscillations of a selected ring oscillator within a selected time period to form a multiple bit frequency count output signal. A data shift register receives the multiple bit frequency count output signal and produces a serial frequency count output signal.

A test element group (TEG) disposed adjacent to at least one memory chip on a wafer includes a ring oscillator configured to output a clock signal based on a direct current (DC) signal received through a first pad and from a test device, a first divider configured to divide the clock signal and to output a first divided signal, and a sequential circuit set configured to receive the clock signal and the first divided signal, to generate a test signal based on the clock signal and the first divided signal, and to output the test signal to the test device through a second pad. The sequential circuit set includes a sequential circuit having a configuration corresponding to at least one circuit included in the at least one die.

A method of testing an integrated circuit die (IC) for cracks includes performing an assembly process on a wafer including multiple ICs including: lowering a tip of a first manipulator arm to contact and pick up a given IC, flipping the given IC such that a surface of the IC facing the wafer faces a different direction, and transferring the IC to a tip of a second manipulator arm, applying pressure from the second manipulator arm to the given IC such that pogo pins extending from the tip of the first manipulator arm make electrical contact with conductive areas of the IC for connection to a crack detector on the IC, and performing a conductivity test on the crack detector using the pogo pins. If the conductivity test indicates a lack of presence of a crack, then the second manipulator arm is used to continue processing of the given IC.