A bias current generator circuit includes a current path and a leakage control circuit. The current path is connected between a supply voltage and a ground level. The current path includes a transistor and a resistor. The transistor has a current channel connected in the current path. The resistor has an upper terminal and a lower terminal connected in the current path, and a well contact to allow a reverse leakage current of the resistor to flow through. The leakage control circuit is connected to the supply voltage. The leakage control circuit includes a driving transistor to provide a driving voltage to the well contact of the resistor, and to allow the reverse leakage current of the resistor to flow into the leakage control circuit.

Systems and circuits include an amplifier having an output; a switching circuit coupled to the output of the amplifier to provide a bias current to bias the amplifier; first current generating circuitry coupled to the switching circuit; and second current generating circuitry coupled to the output of the amplifier and to the switching circuit. In operation, the switching circuit provides the bias current, during a first time period, in response to a first signal generated by the first current generating circuitry, and provides the bias current, during a second time period, after the first time period, in response to a second signal generated by the second current generating circuitry.

When a bias voltage of a substrate is generated, an output voltage of a charge pump is controlled at an appropriate level, resultingly reducing a consumption current. The charge pump generates a predetermined output voltage from a predetermined DC power supply. A clock generator outputs a clock for operating the charge pump. A voltage monitoring unit monitors the output voltage of the charge pump and controls the clock output from the clock generator such that the output voltage is maintained within a predetermined range. A voltage regulator generates the bias voltage from the output voltage of the charge pump.

An input node is configured to receive a supply signal which may be of a first polarity or a second polarity opposite the first polarity. A high input current circuit couples the input node to an output node through at least one power transistor having a control electrode. A low input current circuit couples a supply current from the input node to control circuit configured to control the power transistor. A circuit is provided to detect polarity reversal with respect to the supply signal. A protection circuit for the low input current circuit operates to decouple the control circuit from the input node if the supply signal has the second polarity. A protection circuit for the high input current circuit operates to short-circuit the control electrode of the power transistor to the current path provided by the power transistor between the input node and the output node.

A substrate electric potential stabilization circuit is configured to be connected to a bidirectional switch element including a first main electrode, a second main electrode, and a backside electrode. The stabilization circuit includes a first switch connected to the first main electrode and the backside electrode in series between the first main electrode and the backside electrode, a second switch connected to the second main electrode and the backside electrode in series between the second main electrode and the backside electrode, and a through-current prevention circuit configured to prevent the first switch and the second switch from being turned on simultaneously. The substrate electric potential stabilization circuit prevents a through-current flowing in this circuit.

This document describes a start-up circuit for a self-biasing generator providing a reference voltage or a reference current, the start-up circuit comprising: an impedance circuit; means for coupling, in response to a start-up signal input to the start-up circuit, the impedance circuit to a bias voltage line of a current mirror circuit of the self-biasing generator, thereby inducing current to flow in the self-biasing generator and starting the self-biasing generator; a bypass current source coupled to the current mirror circuit and to the impedance, wherein the bypass current source is configured to be driven by a current in the current mirror circuit and to supply current to the impedance in proportion to the current in the current mirror circuit, thereby limiting the current induced to the self-biasing generator by the start-up circuit.

Apparatus and methods are disclosed for providing a bias, comprising a bias generator circuit including a high voltage (HV) circuit configured to generate a regulated high voltage (HV) from an HV line and provide the regulated HV at an HV regulated line and a low voltage (LV) circuit configured to generate a low voltage (LV) differential from the HV line and to provide the LV differential at an LV line.

An electronic device is disclosed. The electronic device includes: a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type; an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region; at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer; and an electrical connection between one of the at least two active device regions and the first doped region. Each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer.

In an example, a system includes an amplifier configured to produce a bandgap voltage reference. The system also includes a current source configured to provide a current to bias the amplifier. The system includes a switching circuit configured to receive a first current replica signal and a second current replica signal, the switching circuit further configured to cause the current source to provide the current to bias the amplifier based on either the first current replica signal or the second current replica signal.

A semiconductor device and a method for controlling body bias thereof capable of properly controlling body bias of a transistor even in a case where process variation occurs are provided. Operation speeds of ring oscillators ROSCn and ROSCp respectively change due to an influence of process variation at an NMOS transistor MN side and a PMOS transistor MP side. Speed/bias data represent a correspondence relationship between the operation speeds of the ring oscillators ROSCn and ROSCp and set values V1n and V1p of body biases VBN and VBP. A body bias controller receives speed values Sn and Sp measured for the ring oscillators ROSCn and ROSCp to which the body biases VBN and VBP based on default values are respectively applied, and obtains the set values V1n and V1p on the basis of the speed/bias data.