A temperature sensor arrangement (10), including a bandgap voltage generator (12), which is configured to provide an output voltage (V.sub.bg); at least one semiconductor junction (14) for temperature sensing, which is biased by a biasing current flowing through said semiconductor junction (14); and at least one poly-resistor (R.sub.b3) which is connected between the output (23) of the bandgap voltage generator (12) and the semiconductor junction (14), thereby providing said biasing current from the bandgap voltage generator (12) to the semiconductor junction (14).

A temperature sensor arrangement (10), including a bandgap voltage generator (12), which is configured to provide an output voltage (V.sub.bg); at least one semiconductor junction (14) for temperature sensing, which is biased by a biasing current flowing through said semiconductor junction (14); and at least one poly-resistor (R.sub.b3) which is connected between the output (23) of the bandgap voltage generator (12) and the semiconductor junction (14), thereby providing said biasing current from the bandgap voltage generator (12) to the semiconductor junction (14).

Provided is a reference voltage circuit configured to supply a reference voltage in which a variation in voltage with respect to a variation in power supply voltage is suppressed. The reference voltage circuit includes a reference voltage generation circuit which includes an output line for supplying a generated reference voltage to an output terminal; and an output control circuit which includes an output transistor and a stabilization transistor, and is configured to control the supply of the reference voltage to the output terminal, the output transistor containing a gate to which a control voltage is to be provided, the stabilization transistor containing a gate to be connected to a source of the output transistor, and a source to be connected to a drain of the output transistor, and having a gate-source voltage that is equal to or more than a dram-source voltage in a saturation region of the output transistor.

Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.

The disclosure relates to a bandgap reference voltage circuit, in which an output reference voltage is stable with respect to temperature and other variations. Example embodiments include a bandgap reference voltage circuit comprising an output voltage circuit and a plurality, n, of offset amplifiers connected between first and second voltage rails, each of the plurality of offset amplifiers comprising a differential pair of transistors that together define an offset between an input voltage at an input and an output of the amplifier, the offset amplifiers being chained together and connected to the output voltage circuit that provides a bandgap reference voltage dependent on a sum of the offsets of the plurality of offset amplifiers.

The disclosure relates to a bandgap reference voltage circuit, in which an output reference voltage is stable with respect to temperature and other variations. Example embodiments include a bandgap reference voltage circuit comprising an output voltage circuit and a plurality, n, of offset amplifiers connected between first and second voltage rails, each of the plurality of offset amplifiers comprising a differential pair of transistors that together define an offset between an input voltage at an input and an output of the amplifier, the offset amplifiers being chained together and connected to the output voltage circuit that provides a bandgap reference voltage dependent on a sum of the offsets of the plurality of offset amplifiers.

A bandgap reference (BGR) circuit is provided. The BGR circuit includes a first node, a second node, and a third node. A first resistive element is connected between the second node and the third node. The BGR circuit is operative to provide a reference voltage as an output. The BGR circuit further includes a current shunt path connected between the first node and the third node, the current shunt path being operable to regulate a voltage drop across the first resistive element.

A bandgap reference (BGR) circuit is provided. The BGR circuit includes a first node, a second node, and a third node. A first resistive element is connected between the second node and the third node. The BGR circuit is operative to provide a reference voltage as an output. The BGR circuit further includes a current shunt path connected between the first node and the third node, the current shunt path being operable to regulate a voltage drop across the first resistive element.

A reference voltage generation circuit includes a band gap reference circuit configured to generate a first reference voltage that depends on a band gap reference voltage and a supply voltage, and a conversion circuit configured to convert the first reference voltage into a second reference voltage. The second reference voltage depends on the band gap reference voltage and a ground voltage. The ground voltage is lower than the supply voltage.

A low dropout regulator includes a proportional-to-absolute-temperature (PTAT) circuit, an amplification circuit, and an output circuit. The PTAT circuit outputs one current, and the amplification circuit outputs one or more currents. The one or more currents are outputted by the amplification circuit based on collector-emitter voltages associated with transistors of the PTAT circuit. Alternatively, the one or more currents are outputted by the amplification circuit based on the current outputted by the PTAT circuit and the collector-emitter voltages associated with the transistors of the PTAT circuit. The output circuit generates one or more output voltages based on at least one of a base-emitter voltage associated with a transistor of the PTAT circuit and a current of the one or more currents outputted by the amplification circuit.