In a method of treating a target film, a plurality of pattern structures with sidewall surfaces facing each other are provided. A target film is formed on the sidewalls of the plurality of pattern structures. A plurality of nanoparticles are distributed on the target thin film. The target thin film is thermally treated by irradiating laser light from upper sides of the plurality of pattern structures to the target thin film. The irradiated laser light is scattered from the plurality of nanoparticles.

A laser sintering deposition method for disposing lead selenide onto a substrate. The method includes: wet-milling a lead selenide ingot mixed with methanol into a colloidal slurry containing nanocrystals; separating the colloidal slurry into nanocrystal particles and the methanol; depositing the nanocrystal particles to a substrate; and emitting coherent infrared light onto the nanocrystal particles for fusing into a lead selenide crystalline film. Afterwards, the lead selenide film can be exposed to oxygen to form a lead selenite layer, and subsequently to iodine gas to produce a lead iodide layer onto the lead selenite layer.

A method of deposition is disclosed. The method can include dispensing a formable material over a substrate, where the substrate includes a non-uniform surface topography, and where the substrate includes an active zone and an exclusion zone. The method can also include curing the formable material in the exclusion zone to form a circular edge between the exclusion zone and the active zone, contacting the formable material with a superstrate, and curing the formable material in the active zone to form a layer over the substrate, wherein curing is performed while the superstrate is contacting the formable material.

A method of manufacturing a semiconductor device includes irradiation of laser on a semiconductor substrate and cutting of the semiconductor substrate. The laser is irradiated on the semiconductor substrate while moving a focal point of the laser inside the semiconductor substrate. The semiconductor includes a specific crystal plane that is easier to be cleaved, and that is tilted to the surface of the semiconductor substrate. The irradiation of the laser includes repetition of a specific modified layer formation process in which one of the specific modified layers along the specific crystal plane is formed by moving the focal point along the specific crystal plane. In the irradiation of the laser, the specific modified layers are arranged in a direction parallel to the surface of the semiconductor substrate. In the cutting of the semiconductor substrate, the semiconductor substrate is cut along the specific modified layers.

A method includes forming an under bump metallization (UBM) layer over a dielectric layer, forming a redistribution structure over the UBM layer, disposing a semiconductor device over the redistribution structure, removing a portion of the dielectric layer to form an opening to expose the UBM layer, and forming a conductive bump in the opening such that the conductive bump is coupled to the UBM layer.

A method of forming a semiconductor structure includes forming first semiconductor devices over a first substrate, forming a first dielectric material layer over the first semiconductor devices, forming vertical recesses in the first dielectric material layer, such that each of the vertical recesses vertically extends from a topmost surface of the first dielectric material layer toward the first substrate, forming silicon nitride material portions in each of the vertical recesses; and locally irradiating a second subset of the silicon nitride material portions with a laser beam. A first subset of the silicon nitride material portions that is not irradiated with the laser beam includes first silicon nitride material portions that apply tensile stress to respective surrounding material portions, and the second subset of the silicon nitride material portions that is irradiated with the laser beam includes second silicon nitride material portions that apply compressive stress to respective surrounding material portions.

A method removes defects in a dielectric layer, such as during fabrication of a device that emits light from hot electrons injected into an atomically two-dimensional material. An atomically two-dimensional material and the dielectric layer are adjoined. The dielectric layer is adapted to convey a variable electric field for modulating a wavelength of photons electronically emitted across a band structure of the atomically two-dimensional material. Laser pulses are strobed into the dielectric layer with sufficient cumulative energy to remove a majority of the defects in the dielectric layer without altering the atomically two-dimensional material.

A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.

A method includes forming an under bump metallization (UBM) layer over a dielectric layer, forming a redistribution structure over the UBM layer, disposing a semiconductor device over the redistribution structure, removing a portion of the dielectric layer to form an opening to expose the UBM layer, and forming a conductive bump in the opening such that the conductive bump is coupled to the UBM layer.

Provided is a method for stripping a substrate of a semiconductor structure, including: providing a substrate, a first A1N layer, a first AlGaN layer and a function layer from bottom to top; and irradiating the first AlGaN layer from the substrate with laser light to decompose the first AlGaN layer, such that the function layer is separated from the substrate and the first A1N layer. By the method, the first A1N layer and the first AlGaN layer respectively correspond to a nucleation layer and a buffer layer when the function layer is epitaxially grown, to improve the quality of the function layer.