A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.

A thin film transistor according to an exemplary embodiment includes: a substrate; a semiconductor layer disposed on the substrate and including a channel region, and an input region and an output region disposed on both sides of the channel region and doped with an impurity; a buffer layer disposed between the substrate and the semiconductor layer; a control electrode overlapping the semiconductor layer; a gate insulation layer disposed between the semiconductor layer and the control electrode; and an input electrode connected to the input region and an output electrode connected to the output region, wherein the semiconductor layer includes polysilicon and is crystallized by a blue laser scan.

A method for forming a polycrystalline semiconductor layer includes forming a plurality of spacers over a dielectric layer, etching the dielectric layer using the plurality of spacers as an etch mask to form a recess in the dielectric layer, depositing an amorphous semiconductor layer over the plurality of spacers and the dielectric layer to fill the recess, and recrystallizing the amorphous semiconductor layer to form a polycrystalline semiconductor layer.

Methods and systems for crystallizing a thin film provide a laser beam spot that is continually advanced across the thin film to create a sustained complete or partial molten zone that is translated across the thin film, and crystallizes to form uniform, small-grained crystalline structures or grains.

Semiconductor nanofibers are produced at room temperature in a pressure vessel. A semiconductor wafer and metal catalyst are introduced into the pressure vessel. The pressure vessel is filled with a background gas. A nanofiber growth element is introduced into the pressure vessel. For example, the semiconductor may be ablated by a laser. The semiconductor is retained in the pressure vessel for a prolonged period of time until nanofiber growth appears.

A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

A laser irradiation apparatus includes a laser light source which emits a laser beam, a first lens through which the laser beam emitted from the laser light source passes, a first scanner which reflects the laser beam passing through the first lens and changes a direction of the laser beam, a second scanner which reflects the laser beam deflected by the first scanner and changes a direction of the laser beam, a plurality of second lenses through which the laser beam deflected by the second scanner passes, where at least one of the plurality of second lenses is configured to vibrate in one direction, and an optical element through which the laser beam passing through the plurality of second lenses passes, where the optical element is configured to correct an incident angle of the laser beam incident a substrate.

The present invention relates to processes of making components for electronic and optical devices using laser processing and devices comprising such components. Such process uses a laser to introduce chemical and/or structural changes in substrates and films that are the raw materials from which components for electronic and optical devices are made. Such process yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film. In addition, such process does not require large-scale clean rooms and is easily configurable. Thus, rapid device prototyping, design change and evolution in the lab and on the production side is realized.

A thin film transistor according to an exemplary embodiment includes: a substrate; a semiconductor layer disposed on the substrate and including a channel region, and an input region and an output region disposed on both sides of the channel region and doped with an impurity; a buffer layer disposed between the substrate and the semiconductor layer; a control electrode overlapping the semiconductor layer; a gate insulation layer disposed between the semiconductor layer and the control electrode; and an input electrode connected to the input region and an output electrode connected to the output region, wherein the semiconductor layer includes polysilicon and is crystallized by a blue laser scan.