A process of making sensors and sensor arrays that has the ability to manipulate of the morphology or flow of an applied drop or sample over the sensor array surface at any point in the patterning process and sensors and sensor arrays having increased sensitivity and limits of detection. In addition, said process can provided real time notification of any centerline deviation. Such production process can be adjusted in real time. Thus, large numbers of units can be made—even in millions of per day—with few if any out of specification units being produced. Such process does not require large-scale clean rooms and is easily configurable.

A thin film transistor according to an exemplary embodiment includes: a substrate; a semiconductor layer disposed on the substrate and including a channel region, and an input region and an output region disposed on both sides of the channel region and doped with an impurity; a buffer layer disposed between the substrate and the semiconductor layer; a control electrode overlapping the semiconductor layer; a gate insulation layer disposed between the semiconductor layer and the control electrode; and an input electrode connected to the input region and an output electrode connected to the output region, wherein the semiconductor layer includes polysilicon and is crystallized by a blue laser scan.

A multi-layer thin film composite is formed by applying a thin film formed from non-single-crystalline oxide onto a substrate; applying a protection film onto the thin film; and supplying energy to the thin film through at least one of the protection film or the substrate.

A multi-layer thin film composite is formed by applying a thin film formed from non-single-crystalline oxide onto a substrate; applying a protection film onto the thin film; and supplying energy to the thin film through at least one of the protection film or the substrate.

Methods and systems for crystallizing a thin film provide a laser beam spot that is continually advanced across tire thin film to create a sustained complete or partial molten zone that is translated across the thin film, and crystallizes to form uniform, small-grained crystalline structures or grains.

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.

The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

According to one embodiment, a semiconductor photo-receiving device includes a substrate, a light propagation layer and a semiconductor layer including a lowest layer and upper layers. The upper layers include an optical absorption layer. The light propagation layer includes a first light input layer, a first annular layer at a desired distance from the first light input layer, and a first optical waveguide connecting the first light input layer and annular layer. The lowest layer of the semiconductor layer includes a second light input layer, a second annular layer at a desired distance from the second light input layer, and a second optical waveguide connecting the second light input layer and annular layer.

To provide a laser annealing apparatus which is high efficiency of irradiation energy and capable of achieving uniformity in density of irradiation energy in a region irradiated with a laser beam.

SOLVING MEANS

Scheduled treatment regions of a treatment film are each defined in the form of a strip extending in a scanning direction. Irradiation surface areas of line beams are oriented to be inclined relative to the scanning direction within respective scheduled treatment regions.

A method for forming a polycrystalline semiconductor layer includes forming a plurality of spacers over a dielectric layer, etching the dielectric layer using the plurality of spacers as an etch mask to form a recess in the dielectric layer, depositing an amorphous semiconductor layer over the plurality of spacers and the dielectric layer to fill the recess, and recrystallizing the amorphous semiconductor layer to form a polycrystalline semiconductor layer.