A laser processing device and a laser processing method that are capable of forming a high-quality semiconductor film are provided. An ELA device (excimer laser annealing device) (1) includes a laser oscillator (10) that generates laser light for forming a polysilicon film by irradiating an amorphous silicon film over a substrate to be processed with the laser light, a pulse measuring instrument (100) for detecting first partial light and second partial light contained in the laser light, and a monitoring device (60) for comparing a detection result of the first partial light with a detection result of the second partial light.

Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to he added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

The present disclosure is directed to semiconductor structures with source/drain epitaxial stacks having a low-melting point top layer and a high-melting point bottom layer. For example, a semiconductor structure includes a gate structure disposed on a fin and a recess formed in a portion of the fin not covered by the gate structure. Further, the semiconductor structure includes a source/drain epitaxial stack disposed in the recess, where the source/drain epitaxial stack has bottom layer and a top layer with a higher activated dopant concentration than the bottom layer.

A method for manufacturing a Hall sensor, an insulation layer being initially applied to a wafer including an ASIC or integrated into the wafer, a Hall layer, for example, made of InSb or another III-V semiconductor material, being situated thereon, and this Hall layer being at least sectionally recrystallized with the aid of a laser. The insulation layer may be porous or may include a cavity or reflective layer for thermal protection of the ASIC.

A surface treating method and apparatus include operating a quasi-continuous wave fiber laser and pre-scan shaping the laser beam such that an instantaneous spot beam has predetermined geometrical dimensions, intensity profile, and power; operating a scanner at an optimal angular velocity and angular range to divide the pre-scan beam into a plurality of sub-beams deflected towards the surface being processed; guiding the sub-beams through a post-scan optical assembly to provide the spot beam with predetermined geometrical dimensions, power, and angular velocity and range, which are selected such that the instantaneous spot beam is dragged in a scan direction over a desired length at a desired scan velocity, which allow the treated surface to be exposed for a predetermined exposure duration and have a predetermined fluence distribution providing the treated surface with a quality comparable to that of the surface processed by an excimer laser or a burst-mode fiber laser.

Methods and systems for crystallizing a thin film provide a laser beam spot that is continually advanced across tire thin film to create a sustained complete or partial molten zone that is translated across the thin film, and crystallizes to form uniform, small-grained crystalline structures or grains.

Process for fabricating a thin single-crystalline layer n, including steps of: a) providing a support substrate n, b) placing a seed sample n, c) depositing a thin layer n so as to form an initial interface region n including a proportion of seed sample n and a proportion of thin layer n, the proportion of seed sample n decreasing from the first peripheral part n towards the second peripheral part n, e) providing an energy input to the initial interface region n contiguous to the first peripheral part n so as to liquefy a portion n of the thin layer and form a solid/liquid interface region n, and f) gradually moving the energy input away from the seed sample n so as to solidify the portion n so as to gradually move the solid/liquid interface region n.

A laser irradiation device may include: a laser device configured to emit a pulse laser beam; beam scan optics configured to allocate the pulse laser beam emitted from the laser device to optical paths; beam homogenizers provided in the respective optical paths, each of the beam homogenizers being configured to homogenize distribution of light intensity of the pulse laser beam allocated to a corresponding optical path of the optical paths; and a controller configured to control the beam scan optics to allocate, for each pulse, the pulse laser beam emitted from the laser device to the corresponding optical path of the optical paths.

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.

The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.