The present invention provides a composition which is suppressed in decrease of the etching rate over time. A composition which contains; at least one of a quaternary alkyl ammonium fluoride and a hydrate of a quaternary alkyl ammonium fluoride; (A) an N-substituted amide compound that has no active hydrogen on a nitrogen atom and (B) a dipropylene glycol dimethyl ether, which serve as aprotic solvents; and an antioxidant.

A metal structure includes a patterned molybdenum tantalum oxide layer and a patterned metal layer. The patterned molybdenum tantalum oxide layer is disposed on a first substrate, in which the patterned molybdenum tantalum oxide layer includes about 2 to 12 atomic percent of tantalum. Both of an atomic percent of molybdenum and an atomic percent of oxygen of the patterned molybdenum tantalum oxide layer are greater than the atomic percent of tantalum of the patterned molybdenum tantalum oxide layer. The patterned metal layer is disposed on the patterned molybdenum tantalum oxide layer.

A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

Provided are a kit and a laminate which are capable of suppressing residues derived from a temporary adhesive in manufacture of a semiconductor. The kit for manufacturing a semiconductor device includes a composition which contains a solvent A; a composition which contains a solvent B; and a composition which contains a solvent C, in which the kit is used when a temporary adhesive layer is formed on a first substrate using a temporary adhesive composition containing a temporary adhesive and the solvent A, at least some of an excessive amount of the temporary adhesive on the first substrate is washed using the composition containing the solvent B, a laminate is manufactured by bonding the first substrate and a second substrate through the temporary adhesive layer, one of the first substrate and the second substrate is peeled off from the laminate at a temperature of lower than 40° C., and then the temporary adhesive remaining on at least one of the first substrate or the second substrate is washed using the composition containing the solvent C, and the solvent A, the solvent B, and the solvent C respectively satisfy a predetermined vapor pressure and a predetermined saturated solubility.

A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

A composition for use in selective modification of a base material surface includes a polymer having, at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with a metal, and a solvent.

The inventive concept provides an apparatus and method for removing a film formed on a substrate. A method for treating the substrate includes a primary solvent dispensing step of dispensing an organic solvent onto the substrate to remove a photoresist film on the substrate and an ozone dispensing step of dispensing a liquid containing ozone onto the substrate to remove organic residue on the substrate, after the primary solvent dispensing step.

Embodiments disclose a package structure and a fabricating method. The package structure includes: a semiconductor chip; a first non-conductive layer covering a front surface of the semiconductor chip and part of a side wall of the semiconductor chip; a second non-conductive layer positioned on an upper surface of the first non-conductive layer and covering at least part of a side wall of the first non-conductive layer, wherein a melt viscosity of the first non-conductive layer is greater than a melt viscosity of the second non-conductive layer; a substrate; and a solder mask layer positioned on a surface of the substrate, where a first opening is provided in the solder mask layer. The semiconductor chip is flip-chip bonded on the substrate, a surface of the second non-conductive layer away from the first non-conductive layer and a surface of the solder mask layer away from the substrate are bonding surfaces.

A solvent recycle system minimizes chemical consumption used in various semiconductor processes. The solvent is recycled from a nozzle bath via the addition of buffer tank to connect the bath and circulation pumps. Improvements to the bath design further maintain solvent cleanness by preventing intrusion of particles and overflow conditions in the bath.

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.