A retention flip-flop includes a master latch outputting a first signal which is generated based on a signal inputted through an input terminal based on first control signals; a slave latch outputting a second signal generated based on the first signal based on the first control signals and second control signals; and a control logic that generates the first control signals based on a clock signal and provides the first control signals to the master latch and the slave latch, and generates the second control signals based on a power down signal and provides the second control signals to the slave latch. The slave latch comprises a retention latch which transmits the first signal to an output terminal as the second signal by operating as an open loop based on the second control signals or maintains the second signal by forming a closed loop based on the second control signals.

A clocked storage element comprises a first latch having an input data node, a clock input node and a first latch output data node, and a second latch having an input connected to the first latch output data node, a clock input node and a second latch output data node. The first and second latches can have a clocked pull-up current path consisting of two p-channel transistors between their respective output data nodes and the VDD supply line, and a clocked pull-down current path consisting of two n-channel transistors between their respective output data nodes and the VSS supply line.

A semiconductor device includes: a first latch circuit that includes a first inverting circuit, a second inverting circuit, a third inverting circuit, and a fourth inverting circuit; a first first-type well region; a second first-type well region; and a second-type well region. In a plan view, a distance between a drain of a first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the third inverting circuit is longer than a distance between the drain of the first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the fourth inverting circuit.

A dynamic D flip-flop with an inverted output involves an input end (101) used for receiving input data; an output end (102) used for providing output data to respond to the input data; a clock signal end (103) used for receiving a clock signal; a first latch (104) used for latching the input data from the input end (101) and performing inverting transmission on the input data under the control of the clock signal; a second latch (105) used for latching data from the first latch (104) and performing inverting transmission on the data latched by the first latch (104) under the control of the clock signal; and an inverter (106) used for performing inverting output on the data received from the second latch (105), the first latch (104), the second latch (105), and the inverter (106) being sequentially connected in series between the input end and the output end.

The present disclosure includes an integrated circuit comprising a first pair of complementary transistors configured in series, a second pair of complementary transistors configured in series, and at least one charge extraction transistor having a gate coupled to a first potential, a source coupled to a second potential, and a drain coupled to a data storage node of one of the first or second pairs of complementary transistors. The first potential and second potential bias the at least one charge extraction transistor in a nonconductive state. The drain of the at least one charge extraction transistor is formed in a doped material shared with a drain of a transistor of the first or second pairs of complementary transistors.

A semiconductor device includes first, second, and third conductive regions and first and second active regions. The first conductive region has a first width and extends along a first direction. The second conductive region has a second width and extends along the first direction. The first width is greater than the second width. The first active region has a third width and extends along the first direction. The second active region has a fourth width and extends along the first direction. The third width is less than the fourth width. The third conductive region extends along a second direction and is electrically connected to the first conductive region. The second direction is different from the first direction. The first and second active regions are neighboring active regions.

Circuits, systems, and methods are described herein for increasing a hold time of a master-slave flip-flop. A flip-flop includes circuitry configured to receive a scan input signal and generate a delayed scan input signal; a master latch configured to receive a data signal and the delayed scan input signal; and a slave latch coupled to the master latch, the master latch selectively providing one of the data signal or the delayed scan input signal to the slave latch based on a scan enable signal received by the master latch.

A master-slave flip-flop includes a first latch, a second latch and a tristate driver. The first latch has a combined input/output that is coupled with a common node, a pm output, and an nm output. The tristate driver has pm and nm inputs coupled with the pm and nm outputs of the first latch, and a tristate output coupled with the common node. A pm input signal prevents the tristate driver from pulling the common node high, and an nm input signal prevents the tristate driver from pulling the common node low. The second latch is directly coupled with the common node. The first latch generates an nm signal and a pm signal in response to a signal on the first latch clk input and a state of the common node, wherein the pm signal and the nm signal have opposite polarities when the signal on the first latch clk input has a first value, and equal polarities when the signal on the first latch clk input has a second value.

A scan chain architecture with lowered power consumption comprises a multiplexer selecting between a functional input and a test input. The output of the multiplexer is coupled to a low threshold voltage latch and, in test mode, to a standard threshold voltage latch. The low threshold voltage latch and standard threshold voltage latch are configured to store data when a clock input falls, using a master latch functional clock M_F_CLK, master latch test clock M_T_CLK, slave latch functional clock S_F_CLK, and slave latch test clock S_T_CLK. The slave latch has lower power consumption than the master latch.

A flip-flop circuit includes a first master latch circuit transmitting an inverted signal of an input signal received from an external device to a first node and transmitting an inverted signal of a signal of the first node to a second node, according to a first control signal having a first logic level or a second control signal having a second logic level, a first slave latch circuit transmitting an inverted signal of a signal of the second node to a third node according to the first control signal having the second logic level or the second control signal having the first logic level, a first output inverter generating a first output signal by inverting a signal of the third node, and a first control signal generation circuit generating the first control signal and the second control signal based on a clock signal and the signal of the first node.