A component carrier includes a stack with at least one electrically conductive layer structure and at least one electrically insulating layer structure. The stack has at least one central stack section, at least one cavity stack section, and at least one vertical opening formed in the cavity stack section. The cavity stack section at least partially surrounds the central stack section, and the thickness of the central stack section is greater than the thickness of the cavity stack section.

A component carrier with a stack including an electrically insulating layer structure and an electrically insulating structure has a tapering blind hole formed in the stack and an electrically conductive plating layer extending along at least part of a horizontal surface of the stack outside of the blind hole and along at least part of a surface of the blind hole. A minimum thickness of the plating layer at a bottom of the blind hole is at least 8 μm. A demarcation surface of the plating layer in the blind hole and facing away from the stack extends laterally outwardly from the bottom of the blind hole towards a lateral indentation and extends laterally inwardly from the indentation up to an outer end of the blind hole. An electrically conductive structure fills at least part of a volume between the plating layer and an exterior of the blind hole.

Embodiments described herein may be related to apparatuses, processes, and techniques related to creating coaxial structures within glass package substrates. These techniques, in embodiments, may be extended to create other structures, for example capacitors within glass substrates. Other embodiments may be described and/or claimed.

Embodiments disclosed herein include package substrates for electronic packaging applications. In an embodiment, a package substrate comprises a first glass layer, where the first glass layer comprises a first via through the first glass layer, and the first via has an hourglass shaped cross-section. The package substrate may further comprise a second glass layer over the first glass layer, where the second glass layer comprises a second via through the second glass layer, and where the second via has the hourglass shaped cross-section. In an embodiment, the first via is electrically coupled to the second via.

A composite substrate that includes: an upper ceramic layer; a lower ceramic layer; a middle resin layer between the upper ceramic layer and the lower ceramic layer; and a side surface resin layer on all side surfaces of the composite substrate, wherein the middle resin layer and the side surface resin layer are integral resin layers.

A connecting structure includes an insulation base, first pads, and second pads. The insulation base includes a first surface, a second surface, and a lateral surface connecting therebetween. First grooves are defined on the first surface, second grooves are defined on the second surface, third grooves are defined on the lateral surface. Each third groove connects one first groove and one second groove. The first pads are deposited in the first grooves. The second pads are deposited in the second grooves. Wiring portions are deposited in the third grooves, each wiring portion connects one first pad and one second pad. A conductive ink layer is coated on the first and the second pads. A protective ink layer is coated on the wiring portions and the insulating base except for the first and the second pads. The first and the second grooves are stepped grooves.

A component carrier with an electrically insulating layer having a front side and a back side, a first and a second electrically conductive layer covering the front side and the back side of the electrically insulating layer, respectively. A through hole extends through both electrically conductive layers and the electrically insulating layer. An overhang is formed along one of the electrically conductive layers and sidewalls of the electrically insulating layer structure delimiting the through hole. An annular plating layer covers the sidewalls and fills part of the overhang such that a horizontal extension of the overhang after plating is less than 20 μm and/or such that a ratio between a horizontal extension of the overhang after plating and a width of a first window through the first electrically conductive layer and/or a width of a second window through the second electrically conductive layer is smaller than 20%.

A single-layer redistribution plate functioning as a space translator between a device under testing (“DUT”) and a testing PCB may comprise a hard ceramic plate. A DUT side of the plate may have pads configured to interface with a device under testing. Both sides of the plate may comprise traces, vias, and pads to fan out the DUT pad pattern so that the plate side opposite the DUT side has spatially translated pads configured to interface with the pads on a testing PCB. Fabricating a redistribution plate may comprise calibrating and aligning, laser milling vias, laser milling trenches and pads, copper plating, grinding and polishing, removing residual copper, and coating the copper surfaces.

A single-layer redistribution plate functioning as a space translator between a device under testing (“DUT”) and a testing PCB may comprise a hard ceramic plate. A DUT side of the plate may have pads configured to interface with a device under testing. Both sides of the plate may comprise traces, vias, and pads to fan out the DUT pad pattern so that the plate side opposite the DUT side has spatially translated pads configured to interface with the pads on a testing PCB. Fabricating a redistribution plate may comprise calibrating and aligning, laser milling vias, laser milling trenches and pads, copper plating, grinding and polishing, removing residual copper, and coating the copper surfaces.

An electronics module (100), especially a power electronics module, comprising a metal-ceramic substrate (1) serving as a carrier and having a ceramic element (10) and a primary component metallization (21), an insulation layer (40) directly or indirectly connected to the primary component metallization (21), and a secondary component metallization (22) which is connected to the side of the insulation layer (40) facing away from the metal-ceramic substrate (1) and is especially isolated from the primary component metallization (21) using the insulation layer (40), wherein the ceramic element (10) has a first size (L1, D1) and the insulation layer (40) has a second size (L2, D2) and a ratio of the second size (L2, D2) to the first size (L1, D1) has a value smaller than 0.8, to form an island-like insulation layer (40) on the primary component metallization (21).